2SB1558 TOSHIBA
Abstract: B1558
Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SB1558
2SD2387
2-16C1A
2SB1558 TOSHIBA
B1558
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B1558
Abstract: 2SB1558 2SD2387 2SB1558 TOSHIBA
Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SB1558
2SD2387
2-16C1A
B1558
2SB1558
2SD2387
2SB1558 TOSHIBA
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PDF
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transistor D2387
Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2387
2SB1558
2-16C1A
transistor D2387
D2387
2SD2387
2sd2387 data sheet
transistor D2387 data sheet
2SB1558
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PDF
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D2387
Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics
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Original
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2SD2387
2SB1558
2-16C1A
D2387
transistor D2387 data sheet
2SB1558
2SD2387
ICA350
transistor D2387
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PDF
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D2387
Abstract: 2SB1558 2SD2387 transistor D2387
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol
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Original
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2SD2387
2SB1558
2-16C1A
D2387
2SB1558
2SD2387
transistor D2387
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics
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Original
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2SD2387
2SB1558
2-16C1A
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PDF
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2387 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2387
2SB1558
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PDF
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2SB1558
Abstract: 2SD2387
Text: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)
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2SB1558
2SD2387
2SB1558
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PDF
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2SB1558
Abstract: 2SD2387
Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú
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2SD2387
2SB1558
2SB1558
2SD2387
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 PO W ER AM PLIFIER APPLICATIONS U nit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1558 ^o 1 , /
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2SD2387
2SB1558
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PDF
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2SB1558
Abstract: 2SD2387
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 03.2 ±0.2
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2SD2387
2SB1558
2SD2387
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PDF
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2SB1558
Abstract: 2SD2387
Text: TO SH IBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)
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2SB1558
2SD2387
2SB1558
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PDF
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2SB1558
Abstract: 2SD2387
Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • 03.2 ± 0.2 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C)
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2SD2387
2SB1558
2SD2387
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PDF
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2SB1558
Abstract: 2SD2387
Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2387 A. eÆ A rsi I eri n M AXIM UM RATINGS (Tc = 25°C)
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2SB1558
2SD2387
2SB1558
2SD2387
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SB1 558 Unit in mm 15.9MAX. High Breakdown Voltage : V£EO = —140V (Min.) Complementary to 2SD2387 ^o 1 , / — J- f / ik A 5 MAXIMUM RATINGS (Ta = 25°C)
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2SB1558
--140V
2SD2387
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER _ 2SD2387 POW ER AM PLIFIER APPLICATIONS j, Unit in nun 3.2 t 0-3 • • High Breakdown Voltage : V c e O = 140V (Min.) Complementary to 2SB1558 i= M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2387
2SB1558
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PDF
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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2SR562
2SB1329
2SA1706
2SB1433
2SB1517
2SA1707
2SA1708
2SB1459
2SB1332
2sb1355
2SB1493
2SB1516
2SA1842
2sb1261
2SB906
2SB1328
2SB1329
2SB1332
2SA1770
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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