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    2SC4003 Price and Stock

    Rochester Electronics LLC 2SC4003E-TL-E

    2SC4003 - NPN POWER TRANSISTOR
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    DigiKey 2SC4003E-TL-E Bulk 1,480
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    onsemi 2SC4003E-TL-E

    2SC4003E-TL-E
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    Verical 2SC4003E-TL-E 6,300 1,810
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    Rochester Electronics 2SC4003E-TL-E 6,300 1
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    • 1000 $0.1658
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    2SC4003 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4003 Kexin NPN Triple Diffused Planar Silicon Transistor Original PDF
    2SC4003 Sanyo Semiconductor High-voltage driver Original PDF
    2SC4003 Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Original PDF
    2SC4003 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SC4003 TY Semiconductor NPN Triple Diffused Planar Silicon Transistor - TO-252 Original PDF
    2SC4003 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4003 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4003 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4003 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4003 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SC4003D Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Scan PDF
    2SC4003E Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Scan PDF

    2SC4003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4003

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 2SC4003 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1 W (Tamb=25℃) 2. COLLECTOR Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range


    Original     		O-251 2SC4003 O-251 2SC4003 PDF

    transistor 123

    Abstract: 2SC4003 BR 123
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SC4003 TRANSISTOR NPN TO-251 TO-252-2L 123 FEATURES • High hFE hFE=60 to 200 · low VCE(sat) VCE(sat)=0.6V 123 123 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		O-252 2SC4003 O-251 O-252-2L transistor 123 2SC4003 BR 123 PDF

    2044B

    Abstract: 2SC4003
    Text: Ordering number:EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2045B [2SC4003] 1 : Base


    Original     		EN2959A 2SC4003 2045B 2SC4003] 2044B 2044B 2SC4003 PDF

    2SC4003

    Abstract: No abstract text available
    Text: 2SC4003 2SC4003 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 200 mA Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		2SC4003 O-251 2SC4003 PDF

    2SC4003

    Abstract: hFE CLASSIFICATION Marking 400mA-1
    Text: Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4003 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		2SC4003 O-252 2SC4003 hFE CLASSIFICATION Marking 400mA-1 PDF

    2044B

    Abstract: 2SC4003 ITR06242 ITR06243 STF3
    Text: Ordering number:ENN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2045B [2SC4003] 2.3 5.5 1.5 6.5 5.0


    Original     		ENN2959A 2SC4003 2045B 2SC4003] 2044B 2044B 2SC4003 ITR06242 ITR06243 STF3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SC4003 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Excellent hFE linearity


    Original     		2SC4003 O-252 PDF

    2044B

    Abstract: 2SC4003 ITR06242
    Text: 2SC4003 Ordering number : ENN2959B NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features • • • High breakdown voltage. Adoption of MBIT process. Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		2SC4003 ENN2959B 2044B 2SC4003 ITR06242 PDF

    hfe60

    Abstract: hFE transistor 200 hFE-60
    Text: 2SC4003 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features hFE=60 to 200 High hFE low VCE(sat) VCE(sat)=0.6V TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		O-251/TO-252-2L 2SC4003 O-251 O-252-2L hfe60 hFE transistor 200 hFE-60 PDF

    2SC4003

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SC4003 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1 W (Tamb=25℃) 2. COLLECTOR Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO:


    Original     		O-251 2SC4003 O-251 2SC4003 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SC4003 TO-251 TRANSISTOR（NPN） FEATURES 1. BASE ∙ High hFE hFE=60 to 200 2. COLLECTOR ∙ low VCE sat VCE(sat)=0.6V 3. EMITTER 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		O-251 2SC4003 O-251 3DG4003 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SC4003 TRANSISTOR NPN TO-252 FEATURES hFE=60 to 200 High hFE low VCE(sat) VCE(sat)=0.6V 123 123 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		O-252 2SC4003 O-252 PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 PDF

    2SC4003

    Abstract: bau 95
    Text: SANYO SEMICONDUCTOR CORP 22E D 7 T c1707b 0CUJ7G34 0 2SC4003 7 -Z 9 - 23 NPN Triple Diffused Planar Silicon Transistor 2044 High-Voltage Driver Applications 2959A F e a tu re s . H igh breakdow n voltage • Adoption of MBIT process • Excellent hpE lin earity


    OCR Scan     		7cH707b 2SC4003 2SC4003 bau 95 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 2 9 5 9 A 2SC4003 N 0.2959A SA \Y O N P N T rip le D iffused P la n a r S ilicon T ra n s is to r High-Voltage Driver Applications Features . H ig h b re a k d o w n v o lta g e •A doption of M B IT p rocess • E x c e lle n t hpE lin e a rity


    OCR Scan     		2SC4003 --50m PDF

    2959A

    Abstract: 2044b 2SC4003
    Text: Ordering n u m b e r:E N 2 9 5 9 A 2SC4003 N 0.2959A SAiYO NPN Triple Diffused P lanar Silicon Transistor i High-Voltage Driver Applications F e a tu re s . High breakdown voltage •Adoption of MBIT process •Excellent hpE linearity A b so lu te M axim u m R a tin g s a t Ta = 25°C


    OCR Scan     		2SC4003 300VtIE 2959A 2044b 2SC4003 PDF

    2SD1300

    Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
    Text: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.


    OCR Scan     		O-126 T0-220AB 2SA164830 2SC4734 2SA1749 2SC4564 min2000 min4000 2SD894 2SD1153 2SD1300 transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205 PDF

    2sb892

    Abstract: 2sc4645 2sC4389 2SB1406
    Text: SASYO NMP New MPJTransistor Series * Small-sized package containing the same chip that has been so far placed in * Small-sized package making it possible to make application setssmaller and * Can meet tape-used automatic mounting requirements. * Full line-up of products for wide application.


    OCR Scan     		2SA1701 2SC4481 2SA1702* 2SC4482 2SA1703 2SC4483 2SA1704* 2SC4484* 2SC4485* 2SA1706* 2sb892 2sc4645 2sC4389 2SB1406 PDF

    2SD636

    Abstract: SN1402 RT1N141C DTC124ES DTC114ES UN4211 DTC114EK RT1N441S DTC144ES 2SC2456
    Text: - 162 - s « Type No. a « Manuf. = 3 SANYO 5 TOSHIBA m. NEC B H HITACHI S f FUJITSU i & T MATSUSHITA £ m MITSUBISHI □ — A ROHM 2SC 3398 = Ì* SN1402 UN2211 RT1N141C DTC114EK 2SC 3399 ^ h m RN1204 UN4213 RT1N441S DTC144ES H if RN1203 UN4212 RT1N241S DTC124ES


    OCR Scan     		SN1402 UN2211 RT1N141C DTC114EK RN1204 UN4213 RT1N441S DTC144ES RN1203 UN4212 2SD636 SN1402 DTC124ES DTC114ES UN4211 DTC114EK DTC144ES 2SC2456 PDF

    2sD1915

    Abstract: 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343
    Text: - m % Type No. 2SC 287 1 L 2SC 2871S 2SC 2872 ^ 2SC 2873 2SC 2875 2SC 2876 2SC 2877 _ 2SC 2878 2SC 2879 2SC 2880 ^ 2SC 2881 2SC 2882 ^ 2SC 2883 2SC 2884 2SC 2885 ^ 2SC 2891 2SC 2900 - r ' 2SC 2901 ^ 2SC 2905 2SC 2905A 2SC 2907 ' 2 SC 2908 2SC 2909 — 2SC 2910 f


    OCR Scan     		2SC4500L 2SD1759 2SC4500S 2SD863 2SC2001 2SD592 2SC3580 2SD1623 2SC4357 2sD1915 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343 PDF

    2SB1205

    Abstract: 2S81119 2Sk222 2sa128
    Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf


    OCR Scan     		TQ220ML T0220ML T03PB 2SB1205 2S81119 2Sk222 2sa128 PDF

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


    OCR Scan     		2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155 PDF

    D4242

    Abstract: 2SC3987 2SC4000 2SC4001 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A
    Text: - 182 - m XËtë m 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 2SC3979A 2SC3980 2SC3980A 2SC3981 2SC3981A 2SC3982 2SC3982A & tt KT KT KT KT KT KT KT KT KT KT KT KT KT KT « a mw Ta=25‘ C, *0][ÍTc=25eC V’ CBO V’ ceo IC(DC) Pc Pc* (V)


    OCR Scan     		2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 T03PBL) 2SC3992 D4242 2SC3987 2SC4000 2SC4001 PDF