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    2SC4841 Search Results

    2SC4841 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC4841 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC4841 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4841 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC4841 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4841 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC4841 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC4841 Toshiba NPN Transistor Scan PDF

    2SC4841 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4841

    Abstract: No abstract text available
    Text: 2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 8.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


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    PDF 2SC4841 2SC4841

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    TRANSISTOR 4841

    Abstract: 2SC4841 Toshiba transistor a 802
    Text: TO SH IBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB, |S2 ie l 2 = 8.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SC4841 TRANSISTOR 4841 2SC4841 Toshiba transistor a 802

    TRANSISTOR 4841

    Abstract: 2sC4841 821e
    Text: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F =1.8d B , |S2 ie l2 = 8.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


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    PDF 2SC4841 CHARACTE32 -j250 -jl50 TRANSISTOR 4841 2sC4841 821e

    22-H-1

    Abstract: 2SC484 TRANSISTOR 4841 2SC4841 NF 7513
    Text: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = 1.8dB, |S2 iel2 = 8.5dB f = 2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING


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    PDF 2SC4841 22-H-1 2SC484 TRANSISTOR 4841 2SC4841 NF 7513

    3961 G.E

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. 1.6 ± 0.2 Low Noise Figure, High Gain. 0.8 ±0.1 NF = 1.8dB, |S2i e|2= 8.5dB f=2GHz M A Y IM I IM R A T IM fiÇ ÍT a —


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    PDF 2SC4841 3961 G.E

    str 6252

    Abstract: str w 6252 str 1098 ic
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 U nit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2ieP = 8.5dB f = 2GHz M A X IM U M RATINGS (Ta = 25°C) B -: CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


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    PDF 2SC4841 str 6252 str w 6252 str 1098 ic

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8d B , |S2lel 2 = 8.5dB f=2GHz U nit in mm M A X IM U M RATINGS (Ta = 25°C) SYMBOL


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    PDF 2SC4841

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


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    PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC2499

    Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor
    Text: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)


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    PDF 300mA 400MHz 200MHz 2SC2705 2SA1145 2SC4203 O-126 2SC3613 O-220AB T0-220 2SC2499 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


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    PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    high frequency diode

    Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
    Text: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)


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    PDF RN1421 RN2421 100Vjy± 2SC2873 2SA1213 2D01F HN2D01FU 1SS308 HN1D01F 1D02F high frequency diode 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S

    2sc 1203

    Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
    Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240


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    PDF 1815L 2SC2240 2SC1627 2SC752G SC-70) SC-59) 2SC2713 2SC4210 2SA1621 2SC4209 2sc 1203 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, High Gain. NF = 1.8dB, |S2leP = 8.5dB f=2GHz -Q M A X IM U M RATIN G S (T a = 25°C) CHARACTERISTIC Collector-Base Voltage


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    PDF S21el2 2SC4841 --j50