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ROHM Semiconductor 2SD2687STP TRANS GP BJT NPN 12V 5A 3-PIN SP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2687STP	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	2SD2687STP		5,000		650	1 - 10 - 100 - 1000 $0.1125 10000 $0.1063	Buy Now
Quest Components	2SD2687STP		4,000			1 $0.77 10 $0.77 100 $0.77 1000 $0.231 10000 $0.154	Buy Now
Toshiba America Electronic Components 2SD2686(TE12L,ZC) Trans Darlington NPN 70V 1A 1000mW 4-Pin(3+Tab) PW-Mini T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SD2686(TE12L,ZC)		833		49	1 - 10 - 100 $0.6388 1000 $0.2313 10000 $0.2313	Buy Now
	2SD2686(TE12L,ZC)		795		242	1 - 10 - 100 - 1000 $0.3128 10000 $0.3128	Buy Now
Quest Components	2SD2686(TE12L,ZC)		636			1 $0.79 10 $0.79 100 $0.79 1000 $0.316 10000 $0.316	Buy Now
Chip1Stop	2SD2686(TE12L,ZC)	Cut Tape	833			1 - 10 $0.415 100 $0.185 1000 $0.15 10000 $0.15	Buy Now

2SD268 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD268	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SD268	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SD2686	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: Low-Frequency Power Transistor; Application Scope: driver(Darlington output); Comments: Darlington; H_FE: (max 1.5 @I_C=1A, I_B=1mA)	Original	PDF
2SD2687S	ROHM	Low frequency amplifier, storobo	Original	PDF
2SD2687STP	ROHM	Low V_{CE (sat)} Transistor; Package: SPT; Constitution materials list: Packing style: Ammo Box; Package quantity: 5000;	Original	PDF
2SD2688LS	Sanyo Semiconductor	Horizontal Deflection Switching Transistors	Original	PDF
2SD2689LS	Sanyo Semiconductor	Horizontal Deflection Switching Transistors	Original	PDF

2SD268 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Reliability Tests Report Product Name: 2SD2686 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s	Original	2SD2686	PDF
2SD2687S Abstract: No abstract text available Text: 2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S zDimensions Unit : mm zApplication Low frequency amplifier Storobo zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN)	Original	2SD2687S 250mV 2SD2687S	PDF
2SD2687S Abstract: No abstract text available Text: 2SD2687S Transistors Low frequency amplifier, storobo 2SD2687S zExternal dimensions Unit : mm zApplication Low frequency amplifier Storobo 2.0 (15Min.) 3Min. 3.0 4.0 zFeatures 1) A collector current is large. 2) VCE(sat) ≤ 250mV At lc=1.5A / lB=30mA 0.45	Original	2SD2687S 15Min. 250mV 2SD2687S	PDF
ic 4043 Abstract: 2SD2688 2SD2688LS Text: Ordering number : ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).	Original	ENN7526 2SD2688LS 2079D 2SD2688LS] O-220FI ic 4043 2SD2688 2SD2688LS	PDF
2SD2686 Abstract: No abstract text available Text: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base	Original	2SD2686 2SD2686	PDF
2SD2686 Abstract: 2SD268 2sd26 Text: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base	Original	2SD2686 2SD2686 2SD268 2sd26	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER  DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s	Original	2SD2686 2SD2686 2SB2686G-x-AB3-R OT-89 QW-R208-050	PDF
2sd2689 Abstract: 2SD2689LS transistor 2sd2689ls IT030 TA-4042 IT03007 ENN7527 Text: Ordering number : ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.	Original	ENN7527 2SD2689LS 2079D 2SD2689LS] O-220FI 2sd2689 2SD2689LS transistor 2sd2689ls IT030 TA-4042 IT03007 ENN7527	PDF
transistor Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N	Original	2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220	PDF
2SD2687S Abstract: bjt npn Text: SPICE PARAMETER 2SD2687S by ROHM TR Div. * 2SD2687S NPN BJT model * Date: 2006/12/14 .MODEL 2SD2687S NPN + IS=3.0000E-12 + BF=463.17 + VAF=30.958 + IKF=7.4258 + ISE=3.0000E-12 + NE=2.1623 + BR=219.58 + VAR=100 + IKR=1.6647 + ISC=3.0000E-12 + NC=2.0433 + NK=.49844	Original	2SD2687S Q2SD2687S 0000E-12 000E-3 594E-3 67E-12 96E-12 2SD2687S bjt npn	PDF
2SD2686 Abstract: No abstract text available Text: 2SD2686 東芝トランジスタシリコンNPNエピタキシャル形ダーリントン接続 2SD2686 ○ ソレノイドドライブ用 ○ モータドライブ用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 0.5 A)	Original	2SD2686 SC-62 20070701-JA 2SD2686	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2686 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON POWER DESCRIPTION The UTC 2SD2686 is a silicon NPN epitaxial type transistors, including a zener diode between collector and base. it uses UTC’s	Original	2SD2686 2SD2686 2SD2686L-AB3-R 2SD2686G-AB3-R OT-89 QW-R208-050	PDF
Untitled Abstract: No abstract text available Text: 2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power 2SD2686 Solenoid Drive Applications Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) • Zener diode included between collector and base	Original	2SD2686 SC-62	PDF
STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF

IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
pioneer mosfet audio amp ic Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114 Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great	Original	2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2SC6144 Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114 Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.	Original	R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114	PDF
2SD297 Abstract: 2SD209 2SD291 2SD281 2Sd287 2SD299 2SD213 2SD300 2SD295 2SD226A Text: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SD201 90 6 6A 2SD202 110 6 6A 2SD203 130 6 6A 2SD204 60 5 700 2SD205 60 5 700 2SD206 50 8 10A 2SD206A 50 8 10A 2SD207 100 8 10A 2SD207A 100 8 10A 2SD208 150 8 10A 2SD208A 150	Original	2SD201 2SD202 2SD203 2SD204 2SD205 2SD206 2SD206A 2SD207 2SD207A 2SD208 2SD297 2SD209 2SD291 2SD281 2Sd287 2SD299 2SD213 2SD300 2SD295 2SD226A	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N	PDF

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2SD268 Search Results

2SD268 Price and Stock

ROHM Semiconductor 2SD2687STP

Toshiba America Electronic Components 2SD2686(TE12L,ZC)

2SD268 Datasheets (7)

2SD268 Datasheets Context Search

Untitled

2SD2687S

2SD2687S

ic 4043

2SD2686

2SD2686

Untitled

2sd2689

transistor

2SD2687S

2SD2686

Untitled

Untitled

STK411-230E

IGBT GT30F124

2sC5200, 2SA1943

smd transistor h2a

GT30F124

pioneer mosfet audio amp ic

transistor bc 245

2SA1941 amp circuit

2SC6144

2SD297

2sC5200, 2SA1943