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    2SJ226 Search Results

    2SJ226 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ226 Sanyo Semiconductor Ultrahigh-speed switching Original PDF
    2SJ226 Unknown FET Data Book Scan PDF
    2SJ226 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ226 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF

    2SJ226 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original     		EN3811 2SJ226 2SJ226] PDF

    2085A

    Abstract: 2SJ226 ITR00095 ITR00096 ITR00097 ITR00098 ITR00099 ITR00100 a22t 38112
    Text: 注文コード No.N 3 8 1 1 2SJ226 No. 3 8 1 1 51899 新 2SJ226 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 ・ 基板実装時の高さが9.5mm。


    Original     		2SJ226 ITR00101 ITR00100 --15V --10V ITR00099 ITR00102 ITR00103 2085A 2SJ226 ITR00095 ITR00096 ITR00097 ITR00098 ITR00099 ITR00100 a22t 38112 PDF

    EN3811

    Abstract: 2SJ226
    Text: Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm


    Original     		EN3811 2SJ226 2SJ226] EN3811 2SJ226 PDF

    2sc5203

    Abstract: 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005
    Text: Ordering number : E I 0 0 2 3 Announcement Regarding Discontinuation and Limited Availability to Existing Customers of Hyper Device Products Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis.


    Original     		CPH6405 CPH6434 TIG008SS TIG014SS TIG002SS TIG008TS TIG022TS TIG004SS 2sc5203 2SK3615 2sk*3615 2SK1731 TIG022TS 2SJ633 2SJ646 2SK3492 2SJ636 MCH6005 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C


    OCR Scan     		2SJ226 41293YK PDF

    DS-16 SANYO

    Abstract: 2SJ226
    Text: Ordering num ber:EN3811 No.3811 _ 2SJ226 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive, • Its height onboard is 9.5mm. - Meets radial taping.


    OCR Scan     		EN3811 2SJ226 10//S, 100//A DS-16 SANYO PDF

    2SJ469

    Abstract: No abstract text available
    Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5


    OCR Scan     		2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469 PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 PDF

    2S*1206

    Abstract: 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ200 2SJ214 2SJ201
    Text: - 24 - « tt m £ & m m f t ? 1 * K jç. H V m * £ (V) * * P d /P c h (A) % m Í& * * (W) I gss (max) (A) Vg s (V) 0*3 (min) (max) Vd s (A) (A) (V) (Ta=25Xl) (min) (max) Vd s (V) (V) (V) Id (A) (min) (S) Vd s {\ l f (V) 1d (A) 2SJ200 LF PA MOS P E -180 DSS


    OCR Scan     		Ta-25 2SJ200 2SJ201 2SJ202 2SJ203 -200b 2SJ204 2SJ221 130ns, 490nstyp 2S*1206 2S1201 2S1204 2SJ224 2SJ214LS 2s1208 2S1209 2SJ214 2SJ201 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch


    OCR Scan     		2SJ284* 2SJ286* 2SK1847 2SJ285* 2SJ233 2SK1731 2SK1732 2SK1734 2SK1735 DD14SSD PDF

    2SJ468

    Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
    Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8


    OCR Scan     		2SJI88 2SJ189 2SJ191 2SJ192 2SJ194 2SJ195 2SJ253 T0220 2SJ260 2SJ468 2SJ271 2SJ281 2SJ336 PDF