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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power	Original	NPT35015 EAR99 NDS-005	PDF
NPT35015 Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power	Original	NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT	PDF
D4 SMD Abstract: UT7Q512 UT8Q512 UT9Q512 UTXQ512 Text: UTXQ512 SRAM Frequently Asked Questions Introduction: The UTXQ512 are high-performance CMOS asynchronous static RAMs organized as 512K words by 8 bits. The following are questions frequently asked regarding these devices. Detailed information on these devices can be found in the UTXQ512	Original	UTXQ512 UTXQ512 100ns) UT7Q512 250mils 430mils 32-lead UT8Q512 D4 SMD UT9Q512	PDF
Untitled Abstract: No abstract text available Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power	Original	NPT35015 EAR99 NDS-005	PDF