Untitled
Abstract: No abstract text available
Text: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP
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28SOP
26/28SOJ
28TSOP
32sTSOP
32/40/44SOP
32/40SOJ
32/44/50TSOP
100QFP
36/48Mini-BGA
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s134 p-mosfet
Abstract: 74hc260 Mitsumi D359T3 D359T3 schematic diagram inverter lcd monitor fujitsu 62256-10 BERG STRIP teac fd 235hf stepping motor mitsumi mitsumi floppy
Text: frt Page 1 Thursday, August 8, 1996 12:36 PM ÉlanSC300 Microcontroller Evaluation Board User’s Manual evalbd.book : frt Page 2 Thursday, August 8, 1996 12:14 PM ÉlanSC300 Microcontroller Evaluation Board, Revision 1.1 1996 by Advanced Micro Devices, Inc.
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lanSC300
s134 p-mosfet
74hc260
Mitsumi D359T3
D359T3
schematic diagram inverter lcd monitor fujitsu
62256-10
BERG STRIP
teac fd 235hf
stepping motor mitsumi
mitsumi floppy
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MR27T25603L
Abstract: No abstract text available
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR27T25603L-002-05
MR27T25603L
216-word
16-bit/33
432-word
MR27T25603L-xxxTM
50-pin
50-P-400-0
MR27T25603L
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MR27V25603L
Abstract: 66 pin tsop package
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR27V25603L-02-02
MR27V25603L
216-word
16-bit/33
432-word
MR27V25603L-xxxTM)
MR27V25603L-xxxTME)
MR27V25603L-xxxTM,
MR27V25603L-xxxTME
50-pin
MR27V25603L
66 pin tsop package
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Untitled
Abstract: No abstract text available
Text: K4S161622D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.5 September 2000 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.5 Sep. '00 K4S161622D CMOS SDRAM Revision History
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K4S161622D
16bit
K4S161622D-70.
K4S161622D
50-TSOP2-400CF
20MAX
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Untitled
Abstract: No abstract text available
Text: K4S161622D-TI/P CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jun . 1999 K4S161622D-TI/P
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K4S161622D-TI/P
16bit
K4S161622D
K4S161622D
50-TSOP2-400F
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pal 007c
Abstract: b1100 nec LDP16 sulzer s7 7-segment countdown timer MDP36 100LQ128 3pin round shell connector DP83932B LT1084CT-3.3
Text: MiniRISC BDMR4011 Evaluation Board User’s Guide A CoreWare® Product March 1998 ® Order Number XXXXX Document DB15-000055-00, First Edition March 1998 This document describes revision A of LSI Logic Corporation’s BDMR4011 Evaluation Board and will remain the official reference source for all revisions/releases of this product until rescinded by an update.
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BDMR4011
DB15-000055-00,
respons3580
pal 007c
b1100 nec
LDP16
sulzer s7
7-segment countdown timer
MDP36
100LQ128
3pin round shell connector
DP83932B
LT1084CT-3.3
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Untitled
Abstract: No abstract text available
Text: KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 May 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 May. 1999 KM416S1120D CMOS SDRAM Revision History
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KM416S1120D
16bit
KM416S1120D-6
11CLK)
10CLK)
/-10uA.
KM416S1120DT-G/F8
KM416S1120DT-G/F10
KM416S1120D-Z
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Untitled
Abstract: No abstract text available
Text: PEDR27V25653L-02-05 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Jul. 9, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit
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MR27V25653L
PEDR27V25653L-02-05
216-word
16-bit
432-word
16-word
50TSOP
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Untitled
Abstract: No abstract text available
Text: PEDR27V25653L-02-02 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Apr. 9, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit
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MR27V25653L
PEDR27V25653L-02-02
216-word
16-bit
432-word
16-word
50TSOP
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Z04B
Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply
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MR27V6441L
PEDR27V6441L-02-03
MR27V6441L
33MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
MR27V6441L-xxxMP
Z04D
48TSOP2
ST03
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300b tube
Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM
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FBGA-11
24-SOJ-300
-SOJ-300
-TSOP2-300AF
-SOJ-300B
28-SOJ-300
28-SOJ-300A
28-SOJ-400
300b tube
90-FBGA-11
165-FBGA-1517
48-TSOP1-1220F
44-TSOP2-400BF-Lead-Free
SAMSUNG MCP
dram
0X13
SAMSUNG MCP 153
tray bga 64
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HY57V161610FTP
Abstract: HY57V161610F-Series
Text: 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Feb. 2006 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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16bits
11Preliminary
16Mbit
1Mx16bit)
HY57V161610FT
HY57V161610F-Series
216-bits
HY57V161610FTP
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Z04B
Abstract: MARK Z04D
Text: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as
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FEDR27T1641L-02-H1
MR27T1641L
MR27T1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
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KM416S1120DT
Abstract: KM416S1120D
Text: KM416S1120D CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 Jun. 1999 KM416S1120D CMOS SDRAM Revision History
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KM416S1120D
16bit
KM416S1120D-7/8
21ns/20ns
67ns/68ns
KM416S1120D-6
11CLK)
KM416S1120DT
KM416S1120D
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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S8S3122X16
Abstract: S8S3122X16-TCR1 S8S3122X16-TCR2
Text: S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice. Ver 0.0 Sep. '01 S8S3122X16 CMOS SDRAM Revision History Version 0.0 Sep. 2001
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S8S3122X16
16bit
AG1000re
50-TSOP2-400CF
20MAX
10MAX
075MAX
S8S3122X16
S8S3122X16-TCR1
S8S3122X16-TCR2
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Untitled
Abstract: No abstract text available
Text: FEDR27T25603L-02-02 OKI Semiconductor MR27T25603L 16M–Word x 16–Bit or 32M–Word × 8–Bit Issue Date: Jun. 8, 2004 P2ROM FEATURES •16,777,216-word × 16-bit/33,554,432-word × 8-bit electrically switchable configuration · 2.7 V to 3.6 V power supply
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MR27T25603L
FEDR27T25603L-02-02
216-word
16-bit/33
432-word
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Z04B
Abstract: MARK Z04D
Text: OKI Semiconductor MR27V1641L FEDR27V1641L-02-H1 Issue Date: April 21, 2006 16M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as 16,777,216 word × 1-bit. The MR27V1641L supports a simple read operation using a single 3.0V or 3.6V power
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MR27V1641L
FEDR27V1641L-02-H1
MR27V1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
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K4S161622E-TI
Abstract: No abstract text available
Text: K4S161622E-TI/E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 0.0 June 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev 0.0 Jun '01 K4S161622E-TI/E
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K4S161622E-TI/E
16bit
K4S161622E
50-TSOP2-400CF
20MAX
10MAX
075MAX
K4S161622E-TI
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Untitled
Abstract: No abstract text available
Text: PEDR27V25653L-02-03 OKI Semiconductor MR27V25653L 16M–Word x 16–Bit or 32M–Word × 8–Bit Page Mode Issue Date: Apr. 27, 2004 Preliminary P2ROM FEATURES • 16,777,216-word × 16-bit / 33,554,432-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit
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PEDR27V25653L-02-03
MR27V25653L
216-word
16-bit
432-word
16-word
MR27V25603L-xxxTM
50-pin
50-P-400-0
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KM416S1020
Abstract: 2 Banks x 512K x 16
Text: KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 0.6 Sep. 1998 KM416S1020C CMOS SDRAM Revision History
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KM416S1020C
16bit
KM416S1020C-H/L
100MHz
KM416S1020C-8
KM416S1020C-7
115mA
KM416S1020
2 Banks x 512K x 16
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Untitled
Abstract: No abstract text available
Text: KM416S1020C CMOS SDRAM 1Mx 16 SDRAM 5 12K X 16bit X 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.6 Sep. 1998 ELECTRONICS KM416S1020C CMOS SDRAM
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KM416S1020C
16bit
KM416S1020C-H/L
100MHz
KM416S1020C-8
KM416S1020C-7
115mA
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54TSOP2
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'
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OCR Scan
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44TSOP2-400F
50-TSOP2-400F
54-TSOP2-400F
86-TSOP2-400F
54TSOP2
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