BB209
Abstract: BB100 BB484 165 BALL FBGA BB42 bb209a 288-ball 676-BALL BB165B
Text: Package Diagrams Thin Ball Grid Array Packages 42-Ball Thin Ball Grid Array 6 x 5 x 1.2 mm BB42 51-85139-*A 1 Package Diagrams 100-Ball Thin Ball Grid Array (11 x 11 x 1.4 mm) BB100 51-85107-*B 2 Package Diagrams 165-Ball FBGA (13 x 15 x 1.2 mm) BB165A 51-85122-*B
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42-Ball
100-Ball
BB100
165-Ball
BB165A
BB165B
BB165C
172-Ball
BB209
BB100
BB484
165 BALL FBGA
BB42
bb209a
288-ball
676-BALL
BB165B
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CY7C1386C
Abstract: CY7C1387C
Text: CY7C1386C CY7C1387C 18-Mb 512K x 36/1M x 18 Pipelined DCD Sync SRAM Functional Description[1] Features • Supports bus operation up to 250 MHz • Available speed grades are 250, 225, 200 and 167 MHz • Registered inputs and outputs for pipelined operation
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CY7C1386C
CY7C1387C
18-Mb
36/1M
250-MHz
CY7C1386C/CY7C1387C
CY7C1386C
CY7C1387C
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CY7C1381B-100AI
Abstract: 381B CY7C1381B CY7C1381B-117AC CY7C1383B
Text: 381B CY7C1381B CY7C1383B 512 x 36/1M × 18 Flow-Thru SRAM Features • • • • • • • • • • • Fast access times: 7.5, 8.5, 10.0 ns Fast clock speed: 117, 100, 83 MHz Provide high-performance 3-1-1-1 access rate Optimal for depth expansion
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CY7C1381B
CY7C1383B
36/1M
CY7C1381B/CY7C1383B
x36/1M
CY7C1381B-100AI
381B
CY7C1381B
CY7C1381B-117AC
CY7C1383B
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1382C
Abstract: No abstract text available
Text: 380C CY7C1380C CY7C1382C PRELIMINARY 512K x 36 / 1M x 18 Pipelined SRAM Features • • • • • • • • • • • • • • • • Fast clock speed: 250, 225, 200, 167 MHz Provide high-performance 3-1-1-1 access rate Fast OE access times: 2.6, 2.8, 3.0, 3.4 ns
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CY7C1380C
CY7C1382C
119-ball
165-ball
100-pin
CY7C1380C/CY7C1382C
BG119)
BB165A)
1382C
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CY7C1381c-100ac
Abstract: No abstract text available
Text: 381C CY7C1381C CY7C1383C PRELIMINARY 512K x 36/1M x 18 Flow-Thru SRAM Features • • • • • • • • • • • • Fast access times: 6.5, 7.5, 8.5 ns Fast clock speed: 133, 117, 100 MHz Provide high-performance 2-1-1-1 access rate Optimal for depth expansion
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CY7C1381C
CY7C1383C
36/1M
100-pin
119-ball
165-ball
CY7C1381C/CY7C1383C
CY7C1381c-100ac
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Untitled
Abstract: No abstract text available
Text: CY7C1371C CY7C1373C 18-Mb 512K x 36/1M x 18 Flow-Through SRAM with NoBL Architecture Functional Description[1] Features • No Bus Latency (NoBL) architecture eliminates dead cycles between write and read cycles • Can support up to 133-MHz bus operations with zero
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CY7C1371C
CY7C1373C
18-Mb
36/1M
133-MHz
117-MHz
100-MHz
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CY7C136B
Abstract: No abstract text available
Text: CY7C1360B CY7C1362B PRELIMINARY 256K x 36/512K x 18 Pipelined SRAM Features All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock.
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CY7C1360B
CY7C1362B
36/512K
250-MHz
200-MHz
166-MHz
100-pin
119-Ball
165-Ball
CY7C1360B/CY7C1362B
CY7C136B
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Untitled
Abstract: No abstract text available
Text: CY7C1317V18 CY7C1319V18 CY7C1321V18 PRELIMINARY 18-Mb DDR -II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mb density 2M x 8, 1M x 18, 512K x 36 • 250-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency
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CY7C1317V18
CY7C1319V18
CY7C1321V18
18-Mb
250-MHz
p19V18/CY7C1321V18
BB165D
BB165A
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1382C
Abstract: No abstract text available
Text: CY7C1380C CY7C1382C 512K x 36/1M x 18 Pipelined SRAM Features Functional Description • Fast clock speed: 250, 225, 200, 167, 133 MHz • Provide high-performance 3-1-1-1 access rate • Fast OE access times: 2.6, 2.8, 3.0, 3.4, 4.2ns • Optimal for depth expansion
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CY7C1380C
CY7C1382C
36/1M
119-ball
165-ball
100-pin
CY7C1380C/CY7C1382C
1382C
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Untitled
Abstract: No abstract text available
Text: CY7C1361B CY7C1363B 9-Mb 256K x 36/512K x 18 Flow-Through SRAM Functional Description[1] Features • • • • • Supports 133-MHz bus operations 256K X 36/512K X 18 common I/O 3.3V –5% and +10% core power supply (VDD) 2.5V or 3.3V I/O supply (VDDQ)
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CY7C1361B
CY7C1363B
36/512K
133-MHz
117-MHz
100-MHz
100-pin
119-ball
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Untitled
Abstract: No abstract text available
Text: CY7C1360B CY7C1362B 9-Mb 256K x 36/512K x 18 Pipelined SRAM Functional Description[1] Features • Supports bus operation up to 225 MHz • Available speed grades are 225, 200 and 166 MHz • Registered inputs and outputs for pipelined operation • 3.3V core power supply
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CY7C1360B
CY7C1362B
36/512K
225-MHz
200-MHz
166-MHz
100-pin
119-ball
165-Ball
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Untitled
Abstract: No abstract text available
Text: CY7C1370CV25 CY7C1372CV25 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™ The CY7C1370CV25 and CY7C1372CV25 are 2.5V, 512K x 36 and 1M x 18 Synchronous pipelined burst SRAMs with No
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CY7C1370CV25
CY7C1372CV25
36/1M
250-MHz
225-MHz
200-MHz
167-MHz
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CY7C1305V25-167BZC
Abstract: No abstract text available
Text: CY7C1305V25 CY7C1307V25 PRELIMINARY 18-Mb Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 2.5V core power supply with HSTL Inputs and Outputs The CY7C1305V25/CY7C1307V25 are 2.5V Synchronous
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CY7C1305V25
CY7C1307V25
18-Mb
167-MHz
BB165D
BB165A
CY7C1305V25-167BZC
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CY7C1311V18
Abstract: CY7C1313V18 CY7C1315V18
Text: CY7C1311V18 CY7C1313V18 CY7C1315V18 PRELIMINARY 18-Mb QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 250-MHz Clock for High Bandwidth • Four-word Burst for reducing address bus frequency
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CY7C1311V18
CY7C1313V18
CY7C1315V18
18-Mb
250-MHz
CY7C1311V18/CY7C1313V18/CY7C1315V18
CY7C1311V18
CY7C1313V18
CY7C1315V18
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CY7C1304V25
Abstract: No abstract text available
Text: CY7C1304V25 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports — Supports concurrent transactions • 167 MHz Clock for high bandwidth — 2.5 ns Clock-to-Valid access time • 4-Word burst for reducing address bus frequency
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CY7C1304V25
CY7C1304V25
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CY7C1370B
Abstract: CY7C1372B
Text: CY7C1370B CY7C1372B 512K x 36/1M × 18 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between Write and Read cycles • Fast clock speed: 200, 167, 150, and 133 MHz • Fast access time: 3.0, 3.4, 3.8, and 4.2 ns • Internally synchronized registered outputs eliminate
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CY7C1370B
CY7C1372B
36/1M
CY7C1370B/CY7C1372B
36/1M
CY7C1370B
CY7C1372B
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CY7C1386CV25
Abstract: CY7C1387CV25
Text: CY7C1386CV25 CY7C1387CV25 18-Mb 512K x 36/1M x 18 Pipelined DCD Sync SRAM Functional Description[1] Features • Supports bus operation up to 250 MHz • Available speed grades are 250, 225, 200 and 167 MHz • Registered inputs and outputs for pipelined operation
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CY7C1386CV25
CY7C1387CV25
18-Mb
36/1M
250-MHz
225-MHz
200-MHz
167-MHz
BB165A
CY7C1386CV25
CY7C1387CV25
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Untitled
Abstract: No abstract text available
Text: CY7C1355B CY7C1357B 9-Mbit 256K x 36/512K x 18 Flow-Through SRAM with NoBL Architecture Functional Description[1] Features • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles. • Can support up to 133-MHz bus operations with zero
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CY7C1355B
CY7C1357B
36/512K
133-MHz
117-MHz
100-MHz
CY7C1355B/CY7C1357B
165-ball
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CY7C1371
Abstract: CY7C1371B CY7C1373 CY7C1373B
Text: CY7C1371B CY7C1373B 73B 512K x 36/1M x 18 Flow-Thru SRAM with NoBL Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT devices • Supports 117-MHz bus operations with zero wait states — Data is transferred on every clock
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CY7C1371B
CY7C1373B
36/1M
117-MHz
100-MHz
83-MHz
CY7C1371B/CY7C1373B
CY7C1371
CY7C1371B
CY7C1373
CY7C1373B
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Untitled
Abstract: No abstract text available
Text: CY7C1370B CY7C1372B 512K x 36/1M × 18 Pipelined SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between Write and Read cycles • Fast clock speed: 200, 167, 150, and 133 MHz • Fast access time: 3.0, 3.4, 3.8, and 4.2 ns • Internally synchronized registered outputs eliminate
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CY7C1370B
CY7C1372B
36/1M
CY7C1370B/CY7C1372B
36/1M
BG119)
BB165A)
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Untitled
Abstract: No abstract text available
Text: CY7C1302V25 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 167-MHz Clock for high bandwidth — 2.5 ns Clock-to-Valid access time
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CY7C1302V25
167-MHz
CY7C1302V25
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CY7C1360B
Abstract: CY7C1362B
Text: CY7C1360B CY7C1362B 9-Mbit 256K x 36/512K x 18 Pipelined SRAM Functional Description[1] Features • Supports bus operation up to 225 MHz • Available speed grades are 225, 200 and 166 MHz • Registered inputs and outputs for pipelined operation • 3.3V core power supply
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CY7C1360B
CY7C1362B
36/512K
225-MHz
200-MHz
166-MHz
CY7C1360B/CY7C1362B
CY7C1360B
CY7C1362B
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CY7C1311V18
Abstract: CY7C1313V18 CY7C1315V18
Text: CY7C1311V18 CY7C1313V18 CY7C1315V18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 250-MHz Clock for High Bandwidth • 4-Word Burst for reducing address bus frequency
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CY7C1311V18
CY7C1313V18
CY7C1315V18
18-Mbit
250-MHz
CY7C1311V18
CY7C1313V18
CY7C1315V18
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CY7C1370CV25
Abstract: CY7C1370CV25-167 CY7C1370CV25-200 CY7C1370CV25-225 CY7C1370CV25-250 CY7C1372CV25 CY7C1372CV25-225 CY7C1372CV25-250
Text: CY7C1370CV25 CY7C1372CV25 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™ The CY7C1370CV25 and CY7C1372CV25 are 2.5V, 512K x 36 and 1M x 18 Synchronous pipelined burst SRAMs with No
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CY7C1370CV25
CY7C1372CV25
36/1M
CY7C1370CV25
CY7C1372CV25
CY7C13demnifies
CY7C1370CV25-167
CY7C1370CV25-200
CY7C1370CV25-225
CY7C1370CV25-250
CY7C1372CV25-225
CY7C1372CV25-250
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