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Catalog Datasheet	MFG & Type	Document Tags	PDF
HY57V164010C-10 Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of	Original	HY57V164010C HY57V164010C 216-bits 152x4. 1SD30-11-MAR98 400mil 44pin HY57V164010C-10 hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S	PDF
hy57v164010c Abstract: No abstract text available Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of	Original	HY57V164010C HY57V164010C 216-bits 152x4. 400mil 44pin	PDF
X2M ST Abstract: No abstract text available Text: »«Y UND ft! - • H Y57V164010C 2 Banks x Z M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of	OCR Scan	Y57V164010C HY57V164010C 216-bits 152x4. 400mil 44pin 1SD30-U-MA298 X2M ST	PDF
Untitled Abstract: No abstract text available Text: - H Y U N D A I ♦ HYM7V75AR400C N-SERIES > Registered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75AR400C is a high speed 3.3Volt Synchronous Dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in TSO PII and one 8-pin T S S O P 2K bit EEPRO M on a 168-pin glass-epoxy	OCR Scan	HYM7V75AR400C 4Mx72 168-pin hig66MHz 50MHz HYM7V75AR40GC 111run	PDF