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    HY57V654020 Price and Stock

    SK Hynix Inc HY57V654020BTC-10P

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    Bristol Electronics HY57V654020BTC-10P 15 1
    • 1 $8.775
    • 10 $6.5813
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    Quest Components HY57V654020BTC-10P 12
    • 1 $11.7
    • 10 $8.775
    • 100 $8.775
    • 1000 $8.775
    • 10000 $8.775
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    SK Hynix Inc HY57V654020BTC-75

    16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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    Quest Components HY57V654020BTC-75 10
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    HYU HY57V654020BTC-6DR-A

    Electronic Component
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    ComSIT USA HY57V654020BTC-6DR-A 482
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    HYU HY57V654020BTC-6A

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    ComSIT USA HY57V654020BTC-6A 103
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    HY57V654020 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V654020BLTC Hynix Semiconductor 4 Banks x 4M x 4-Bit Synchronous DRAM Original PDF
    HY57V654020BTC Hynix Semiconductor 4 Banks x 4M x 4-Bit Synchronous DRAM Original PDF

    HY57V654020 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY57V654020

    Abstract: Hyundai Semiconductor dram 875mil
    Text: HY57V654020 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of


    Original     		PDF HY57V654020 HY57V654020 864-bit 304x8. 1SE16-10-SEP97. Hyundai Semiconductor dram 875mil

    HY57V654020BTC-75

    Abstract: No abstract text available
    Text: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of


    Original     		PDF HY57V654020B HY57V654020B 864-bit 304x4. 400mil 54pin HY57V654020BTC-75

    Untitled

    Abstract: No abstract text available
    Text: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V654020B HY57V654020B 864-bit 304x4. 400mil 54pin

    HY57V654020ATC-10S

    Abstract: HY57V654020ATC HY57V654020A
    Text: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of


    Original     		PDF HY57V654020A HY57V654020A 864-bit 304x4. 400mil 54pin HY57V654020ATC-10S HY57V654020ATC

    Untitled

    Abstract: No abstract text available
    Text: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V654020B HY57V654020B 864-bit 304x4.

    dram 4mx4

    Abstract: HY57V654020A Hyundai Semiconductor dram HY57V654020ATC-10S
    Text: HY57V654020A 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of


    Original     		PDF HY57V654020A HY57V654020A 864-bit 304x8. 1SE31-11-MAR98. 400mil 54pin dram 4mx4 Hyundai Semiconductor dram HY57V654020ATC-10S

    Untitled

    Abstract: No abstract text available
    Text: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V654020B HY57V654020B 864-bit 304x4. 400mil 54pin

    HY57V654020BTC-10P

    Abstract: No abstract text available
    Text: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.


    Original     		PDF HY57V654020B HY57V654020B 864-bit 304x4. 400mil 54pin HY57V654020BTC-10P

    Untitled

    Abstract: No abstract text available
    Text: HY57V654020B 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of


    Original     		PDF HY57V654020B HY57V654020B 864-bit 304x4. 400mil 54pin

    BYTE18

    Abstract: BYTE65 HYM7V75AS1601ATNG
    Text: 16Mx72 bit SDRAM “Intel” Registered DIMM N-Series with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8KRefresh HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A DESCRIPTION The HYM7V75AS1600A/ 75AS1601A/ 75AS1630A/ 75AS1631A N-Series are high speed 3.3-Volt


    Original     		PDF 16Mx72 PC/100 16Mx4 HYM7V75AS1600A/ HYM7V75AS1601A/ HYM7V75AS1630A/ HYM7V75AS1631A 75AS1601A/ 75AS1630A/ BYTE18 BYTE65 HYM7V75AS1601ATNG

    Untitled

    Abstract: No abstract text available
    Text: HY57V654020BTC , 16Mx4-bit, 4K Ref., 4Banks 3.3V DESORPTION The Hynix HY57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020B is organized as 4banks of 4,194,304x4.


    OCR Scan     		PDF HY57V654020BTC 16Mx4-bit, HY57V654020B 864-bit 304x4. 154pin

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D ft l - • HY57V654020A 4 Banks x 4 M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654020A is organized as 4banks of


    OCR Scan     		PDF HY57V654020A HY57V654020A 864-bit 304x8.

    10d01

    Abstract: No abstract text available
    Text: -«Y U H D «! > -• HY57V654020 4 Banks x 4 U x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654020 is a 6 7,108,864-bit CMOS Synchronous DRAM ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V654020 is organized as 4banks of


    OCR Scan     		PDF HY57V654020 864-bit 304x8. 10d01

    Untitled

    Abstract: No abstract text available
    Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL


    OCR Scan     		PDF 16Mx4 HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 HY57V644010

    4mx16

    Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part


    OCR Scan     		PDF HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, x16-bit, HYM41V33100BTWG HYM41V33100DTYG PC133 1Mx32, 1Mx16 4mx16 HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620

    1gb pc133 SDRAM DIMM 144pin

    Abstract: 54-PIN PC100 gm72v66841
    Text: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz 1gb pc133 SDRAM DIMM 144pin 54-PIN PC100 gm72v66841

    hy57v168010a

    Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
    Text: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.


    OCR Scan     		PDF 16M-bit 1Mx16-bit Y57V164010A HY57V168010A HY57V161610A 7V651610 HY57V651620 HY57V644021 HY57V654021 HY57V648021 Y57V HY57V641620 HY57V641621

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		PDF 256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN

    hy57v168010a

    Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
    Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part


    OCR Scan     		PDF 16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII

    HYM7V75AS1601

    Abstract: No abstract text available
    Text: - H Y U N D A I ^16MX72 BIT SDRAM “INTEL” REGISTERED DIMM N-SERIES with PLL & PC/100 SDRAM Specification Supporting based on 16Mx4 SDRAM, LVTTL, 2/4-Banks & 4K/8K Refresh HYM7V75AS1600A/ HYM7V75AS1601 A/ HYM7V75AS1630A/ HYM7V75AS1631A PRELIMINARY DESCRIPTION


    OCR Scan     		PDF 16MX72 PC/100 16Mx4 HYM7V75AS1600A/ HYM7V75AS1601 HYM7V75AS1630A/ HYM7V75AS1631A 75AS1601A/ 75AS1630A/

    HY57V16161

    Abstract: hy57v168010b 1MX16BIT 4MX16
    Text: •’HYUNDAI - • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE S D R A M Fart Numbering Ordering Information 3. DRAM DATA SHEETS 4M-bit S D R A M Page HY57V41610TC- 256Kx16-bit, 1K Ref. 2Bank, 3.3V-• Timing Diagram


    OCR Scan     		PDF HY57V41610TC--------------------- 256Kx16-bit, 16M-bit HY57V16401O --------HY57V168010BTC------------------- -------------------------------HY57V16161 -------------------1Mx16-bit, 64M-bit HY5DV654023TC-------------------- HY57V16161 hy57v168010b 1MX16BIT 4MX16

    HY57V161610TC

    Abstract: No abstract text available
    Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC


    OCR Scan     		PDF 16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC