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HY57V654010 Abstract: RA12 875mil Text: HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V654010 is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V654010 is organized as 2banks of	Original	PDF	HY57V654010 HY57V654010 864-bit 608x4. 1SE15-10-SEP97. RA12 875mil
hy57v168010b Abstract: ddr sdram 128Mbit 8Mx16 54-PIN Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x	OCR Scan	PDF	256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN
hy57v168010a Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801 Text: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part	OCR Scan	PDF	16M-bit HY57V16401OATC HY57V164010ALTC HY57V16801 HY57V168010ALTC HY57V161610ATC HY57V161610ALTC 64M-bit HY57V644010TC HY57V644020TC hy57v168010a HY57V164010 TSOPII
Untitled Abstract: No abstract text available Text: u i r i l ai n • i " H Y U N D A I 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL	OCR Scan	PDF	HY57V644010 HY57V644020 HY57V654010 HY57V654020 HY57V644011 HY57V644021 HY57V654011 HY57V654021 16Mx4 HY57V644010/
Untitled Abstract: No abstract text available Text: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of	OCR Scan	PDF	HY57V654010 57V654010 864-bit 608x4.
HY57V161610TC Abstract: No abstract text available Text: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC	OCR Scan	PDF	16Mbit HY57V164010TC HY57V168010TC HY57V161610TC HY57V644010TC HY57V644020TC HY57V654010TC HY57V654020TC Y57V64401IT HY57V644/125/100 HY57V161610TC