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    HY62UF16101C Price and Stock

    SK Hynix Inc HY62UF16101CLLF-85IDR

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    Bristol Electronics HY62UF16101CLLF-85IDR 1,119
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    HY62UF16101C Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY62UF16101C Hynix Semiconductor 64K x 16-Bit full CMOS SRAM Original PDF
    HY62UF16101CLLF Hynix Semiconductor 64K x 16-Bit full CMOS SRAM Original PDF
    HY62UF16101CLLF-I Hynix Semiconductor 64K x 16-Bit full CMOS SRAM Original PDF
    HY62UF16101CSLF Hynix Semiconductor 64K x 16-Bit full CMOS SRAM Original PDF
    HY62UF16101CSLF-I Hynix Semiconductor 64K x 16-Bit full CMOS SRAM Original PDF

    HY62UF16101C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SM-1994

    Abstract: HY62UF16101C
    Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


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    HY62UF16101C 64Kx16bit 100ns HYUF611Cc 100ns SM-1994 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


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    HY62UF16101C 64Kx16bit 100ns HYUF611Cc 100ns PDF

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology


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    HY62UF16101C 64Kx16bit 16bit. 400mil Voltage2UF16101C 48ball SM-1994. SM-1994 PDF

    BS62LV256-70

    Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808
    Text: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: [email protected] Phone Number: 949-789-6274 Fax Number: 949-789-6277


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    32Kx8 128Kx8 256Kx8 BS62XV256-25 BS62UV256-15 BS62LV256-70 BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62LV256-70 M5M5408 BS62UV256-15 M5M5408B-55 t0808 PDF

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


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    32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16100C uses high performance full CMOS process technology and designed for high speed low


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    HY62UF16100C 64Kx16bit 16bit. 400mil UF16100C 48ball SM-1994. PDF

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


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    PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


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    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    MBI5024

    Abstract: dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963
    Text: LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro 16 Bit CS8816 / CS8826 MBI5024 / MBI5026 DM134 / DM135 / DM13C TB62706 / TB62726 MAX6969 / MAX6971 STP16C596 / STP16CP05 A6276 8 Bit CS8808/CS8818 MBI5167 / MBI5168


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    CS8816 CS8826 MBI5024 MBI5026 DM134 DM135 DM13C TB62706 TB62726 MAX6969 dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963 PDF

    X16-BIT

    Abstract: 64K SRAM
    Text: H Y 6 2U F 1 610 1C S eries 64K x16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology and designed for high speed low power circuit


    OCR Scan
    HY62UF16101C x16bit 16bit. HYUF611CC 100ns X16-BIT 64K SRAM PDF

    256Kx16bit

    Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V


    OCR Scan
    GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16 PDF

    FBGA 9 x 20

    Abstract: HY62CT08081E hynix hy T0808
    Text: Ordering Information Old Part No. System HY XX X XX X X X X X XX XX HYUNDAI HY XXX I TEMPERATURE BLANK : 0°C ~ 70°C E : -25°C - 85-C I : -40°C ~ 85°C : Memory Product PRODUCT GROUP 62 63 67 : Slow SRAM : Fast SRAM : Sync SRAM SPEED 80 10 12 15 17 20 25


    OCR Scan
    100ns 120ns 150ns 128KX 512Kx 256Kx HY62UF16101C HY62QF16101C HY62SF16101C HY62UF16201A FBGA 9 x 20 HY62CT08081E hynix hy T0808 PDF