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Vishay Siliconix IRF624SPBF MOSFET N-CH 250V 4.4A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF624SPBF	Tube	969		1	1 $2.84 10 $2.84 100 $2.84 1000 $1.02138 10000 $1.02138	Buy Now
Vishay Siliconix IRF624 MOSFET N-CH 250V 4.4A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF624	Tube			1,000	1 - 10 - 100 - 1000 $1.73487 10000 $1.73487	Buy Now
Bristol Electronics	IRF624		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRF624		400			1 $1.35 10 $1.35 100 $0.675 1000 $0.54 10000 $0.54	Buy Now
Vishay Siliconix IRF624S MOSFET N-CH 250V 4.4A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF624S	Tube			1,000	1 - 10 - 100 - 1000 $2.025 10000 $2.025	Buy Now
Bristol Electronics	IRF624S		848			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRF624S		678			1 $3.888 10 $3.888 100 $3.888 1000 $1.458 10000 $1.458	Buy Now
Vishay Siliconix IRF624L MOSFET N-CH 250V 4.4A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF624L	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix IRF624PBF MOSFET N-CH 250V 4.4A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF624PBF	Tube			1,000	1 - 10 - 100 - 1000 $0.82363 10000 $0.82363	Buy Now

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IRF624 Datasheets (42)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF624	Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF
IRF624	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF624	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 4.4A TO-220AB	Original	PDF
IRF624	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRF624	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF624	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRF624	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 4.4A, Pkg Style TO-220AB	Scan	PDF
IRF624	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF624	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRF624	International Rectifier	HEXFET Power MOSFET	Scan	PDF
IRF624	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRF624	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF624	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF624	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

IRF624	Unknown	FET Data Book	Scan	PDF
IRF624A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRF624A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF
IRF624A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF624A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF
IRF624B	Fairchild Semiconductor	250 V N-Channel MOSFET	Original	PDF

IRF624 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PD - 95626 IRF624PbF • Lead-Free Document Number: 91029 8/3/04 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029	Original	IRF624PbF 08-Mar-07	PDF
IRF624A Abstract: No abstract text available Text: IRF624A Advanced Power MOSFET FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology RDS on = 1.1 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 4.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V	Original	IRF624A O-220 IRF624A	PDF
IRF624B Abstract: IRFS624B IRF series Text: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	IRF624B/IRFS624B O-220 IRF624B IRFS624B IRF series	PDF
diode 132 E Abstract: diode IR 132 E Text: PD - 95626 IRF624PbF • Lead-Free www.irf.com 1 8/3/04 IRF624PbF 2 www.irf.com IRF624PbF www.irf.com 3 IRF624PbF 4 www.irf.com IRF624PbF www.irf.com 5 IRF624PbF 6 www.irf.com IRF624PbF www.irf.com 7 IRF624PbF Peak Diode Recovery dv/dt Test + Circuit Layout Considerations	Original	IRF624PbF O-220AB. O-220AB diode 132 E diode IR 132 E	PDF
Untitled Abstract: No abstract text available Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF624S, SiHF624S 2002/95/EC O-263) 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	IRF624S, SiHF624S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRF624 Abstract: SiHF624 SiHF624-E3 Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)	Original	IRF624, SiHF624 O-220 O-220 18-Jul-08 IRF624 SiHF624-E3	PDF
VISHAY diode MARKING ED Abstract: ED MARKING Vishay IRF530S Text: PD- 95985 IRF624SPbF Lead-Free Document Number: 91030 12/21/04 www.vishay.com 1 IRF624SPbF Document Number: 91030 www.vishay.com 2 IRF624SPbF Document Number: 91030 www.vishay.com 3 IRF624SPbF Document Number: 91030 www.vishay.com 4 IRF624SPbF Document Number: 91030	Original	IRF624SPbF 12-Mar-07 VISHAY diode MARKING ED ED MARKING Vishay IRF530S	PDF
ED marking code diode Abstract: IRF530S Text: PD- 95985 IRF624SPbF Lead-Free www.irf.com 1 12/21/04 IRF624SPbF 2 www.irf.com IRF624SPbF www.irf.com 3 IRF624SPbF 4 www.irf.com IRF624SPbF www.irf.com 5 IRF624SPbF 6 www.irf.com IRF624SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations	Original	IRF624SPbF EIA-418. ED marking code diode IRF530S	PDF
AN609 Abstract: IRF624 SiHF624 Text: IRF624_RC, SiHF624_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRF624 SiHF624 AN609, 09-Mar-10 AN609	PDF
Untitled Abstract: No abstract text available Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)	Original	IRF624, SiHF624 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)	Original	IRF624, SiHF624 O-220 O-220 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	IRF624S, SiHF624S SMD-220 12-Mar-07	PDF
Untitled Abstract: No abstract text available Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)	Original	IRF624, SiHF624 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

IRF624 Abstract: SiHF624 SiHF624-E3 irf624p Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)	Original	IRF624, SiHF624 O-220 O-220 18-Jul-08 IRF624 SiHF624-E3 irf624p	PDF
Untitled Abstract: No abstract text available Text: IRF624A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|^A(Max.) @ V DS = 250V	OCR Scan	IRF624A	PDF
th 2167.1 Abstract: No abstract text available Text: • 4 3 D E 271 0 0 5 4 0 1 0 7 Tfl ■ HAS 23 H A R R I S IRF624, IRF625 IRF626, IRF627 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 2 0 A B • 3.8A and 3.3A, 250V - 275V • rD S °n = T O P VIEW a n d 1 -5 i ^ • Single Pulse Avalanche Energy Rated	OCR Scan	IRF624, IRF625 IRF626, IRF627 -220A th 2167.1	PDF
diode smd ed 49 Abstract: smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode smd diode code I5 A8 JJ SMD diode diode smd marking ed st smd diode marking code Text: PD-9.1004 International i“R Rectifier IRF624S HEXFET Power M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 250V	OCR Scan	IRF624S SMD-220 D-63S0 G214b7 i09Zj diode smd ed 49 smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode smd diode code I5 A8 JJ SMD diode diode smd marking ed st smd diode marking code	PDF
Untitled Abstract: No abstract text available Text: Il International ü g Rectifier MflSSMSE ÜOm71G TMl • INR IRF624 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • PD-9.472B Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE ]>	OCR Scan	Om71G IRF624	PDF
Untitled Abstract: No abstract text available Text: IRF624A Advanced Power MOSFET FEATURES B ^D S S - 250 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 1 .1 Q 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|iA (M ax.) @ V DS = 250V	OCR Scan	IRF624A	PDF
IRF624 Abstract: No abstract text available Text: IRF624 Advanced Power MOSFET FEATURES B ^D S S - 250 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 1 .1 Q 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|iA (M ax.) @ V DS = 250V	OCR Scan	IRF624 IRF624	PDF
IRF624 Abstract: RG-185 9472 Text: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer	OCR Scan	IRF624 O-220 IRF624 RG-185 9472	PDF
IRF624A Abstract: No abstract text available Text: IRF624A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 .1 Q 4 .1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V	OCR Scan	IRF624A 742fi IRF624A	PDF
1041A Abstract: 1RF624 Text: IRF624A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A M ax. @ VOS = 250V ■ Low Ros(on) •' 0.742 S2 (Typ.)	OCR Scan	IRF624A 1041A 1RF624	PDF

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IRF624 Datasheets (42)

IRF624 Datasheets Context Search

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IRF624A

IRF624B

diode 132 E

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IRF624

VISHAY diode MARKING ED

ED marking code diode

AN609

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IRF624

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th 2167.1

diode smd ed 49

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IRF624

IRF624

IRF624A

1041A