Untitled
Abstract: No abstract text available
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
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Original
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IRF624S,
SiHF624S
2002/95/EC
O-263)
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF624S,
SiHF624S
2002/95/EC
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
IRF624
Abstract: SiHF624 SiHF624-E3
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
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IRF624,
SiHF624
O-220
O-220
18-Jul-08
IRF624
SiHF624-E3
|
PDF
|
AN609
Abstract: IRF624 SiHF624
Text: IRF624_RC, SiHF624_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRF624
SiHF624
AN609,
09-Mar-10
AN609
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
O-220
O-220
12-Mar-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
|
Original
|
IRF624S,
SiHF624S
SMD-220
12-Mar-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
IRF624
Abstract: SiHF624 SiHF624-E3 irf624p
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
O-220
O-220
18-Jul-08
IRF624
SiHF624-E3
irf624p
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
IRF624S
Abstract: SiHF624S SiHF624S-E3
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel
|
Original
|
IRF624S,
SiHF624S
2002/95/EC
O-263)
11-Mar-11
IRF624S
SiHF624S-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
|
Original
|
IRF624S,
SiHF624S
SMD-220
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF624S,
SiHF624S
2002/95/EC
O-263)
11-Mar-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel
|
Original
|
IRF624S,
SiHF624S
2002/95/EC
O-263)
18-Jul-08
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching
|
Original
|
IRF624S,
SiHF624S
2002/95/EC
O-263)
O-263electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
AN609
Abstract: IRF624S SiHF624S
Text: IRF624S_RC, SiHF624S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRF624S
SiHF624S
AN609,
09-Mar-10
AN609
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)
|
Original
|
IRF624,
SiHF624
2002/95/EC
O-220AB
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
IRF624S
Abstract: SiHF624S SiHF624S-E3
Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating
|
Original
|
IRF624S,
SiHF624S
O-263)
18-Jul-08
IRF624S
SiHF624S-E3
|
PDF
|