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    MG15C4HM1 Search Results

    MG15C4HM1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG15C4HM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15C4HM1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15C4HM1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG15C4HM1 Unknown FET Data Book Scan PDF
    MG15C4HM1 Toshiba TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,15A I(D),TO-247VAR Scan PDF

    MG15C4HM1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGF1202

    Abstract: MG15G1AM1 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E MG15C4HM1 MG15D4GM1
    Text: - 150 - * m MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 MG15G4GM1 MGX5G6EM1 ffl % M2 M2 M2 M2 M2 M2 M2 & m ÎS + 11/ . \ V* K V X E# * » j£ Vg s * X * * (V) X P d /P c h (A) * * (W) (min) (max) Vd s (V) (V) (V) gm (min) (typ) V d s (S) (V) (S)


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    MG15C4HM1 MG15D4GM1 MG15D4HM1 MG15D6EM1 MG15G1AM1 450220AB) MG30N10E 05typ O-220AB) MG30N06EL MGF1202 MGF1402 mgf1102 MGF1305 MG36N06E MGF1302 MG35N06E PDF

    MG15C4HM1

    Abstract: Silicon N Channel
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15C4HM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mra MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Lov7 Drain-Source ON Resistance


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    MG15C4HM1 MG15C4HM1 Silicon N Channel PDF

    MG15C4HM1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG15C4HM1 HIGH POWER SW I T C H I N G APPLICATIONS. M O T O R CO NTRO L APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


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    MG15C4HM1 MG15C4HM1 PDF

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


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    O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 PDF

    MG15C4HM1

    Abstract: No abstract text available
    Text: TOSHIBA {D ISCR ET E/OPTO} ~íü DE 9097250 TOSHIBA DISCRETE/OPTO ^osivhi I ÌCH72S0 90D 16382 2 S IS 78 SEMICONDUCTOR □ Dlfc.gflE 1 |~r D T '3 ^ - / 3 ~T' 3 $ '<2 7 M G 1 5 C 4 H M 1 TECHNICAL DAtA (150V/15A) EQUIVALEN CIRCUIT OUT LINE CO rir» u C/Î


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    CH72S0 50V/15A) Ta-25Â 2SK578 MG15C4HM1 PDF

    MG15C4HM1

    Abstract: 2sk57 78MG Dc172SD 2sk toshiba 394 opto 2SK578 .Dt3
    Text: TOSHIBA ~TÜ OISCRETE/OPTOJ DE I T0T72SD □01fc,3fl2 1 f~r_ 9 0 D 1 63Ö2 9097250 TOSHIBA D ÏSCRETE/OPTO ^siubt SEMICONDUCTOR 2SK 5 7 8 D T- 3^-/3 ~7~' 3 M G 1 5 C 4 H M 1 TECHNICAL D A ÎA ‘ 7 (150V/15A) EQUIVALEN CIRCUIT OUT LINE CO f-. in u; CM Weight : 9.75g


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    T0T72SD MG15C4HM1 50V/15A) 140gr 001h3Ã Dr-37- 2sk578 MG15C4HM1 2sk57 78MG Dc172SD 2sk toshiba 394 opto .Dt3 PDF

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


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    2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 PDF

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


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    00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 PDF

    2sk1029

    Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
    Text: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1


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    2SK578* 2SK447" 2SK568* 2SK1513" 2SK1029* MG15G1AM1 2SK1333* MG30D1ZM1 MG30D2YM1 MG30G2YM1 2sk1029 MP6702 2sk1513 2SK56 MG15C4HM1 MG50D2DM1 PDF