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    SI9410DY Search Results

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    SI9410DY Price and Stock

    NXP Semiconductors SI9410DY,518

    MOSFET N-CH 30V SOT96-1
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    DigiKey SI9410DY,518 Reel 10,000
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    Vishay Siliconix SI9410DYT1

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    Bristol Electronics SI9410DYT1 2,462
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    Bristol Electronics SI9410DY-T1 2,173
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    Vishay Siliconix SI9410DY-T1

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    SI9410DY-T1 1,595 3
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    SI9410DY-T1 1,200
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    Quest Components SI9410DY-T1 3,750
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    SI9410DY-T1 1,276
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    Vishay Siliconix SI9410DY

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    Bristol Electronics SI9410DY 2,111
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    Quest Components SI9410DY 1,244
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    SI9410DY 560
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    SI9410DY 379
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    SI9410DY 108
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    SI9410DY 54
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    SI9410DY 48
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    ComSIT USA SI9410DY 2,470
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    SI9410DY Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9410DY Fairchild Semiconductor Single N-Channel Enhancement Mode MOSFET Original PDF
    SI9410DY Kexin N-Channel 30V MOSFET Original PDF
    Si9410DY Philips Semiconductors N-channel TrenchMOS logic level FET Original PDF
    SI9410DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    Si9410DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    Si9410DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9410DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SO-8 Scan PDF
    SI9410DY,518 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7A SOT96-1 Original PDF
    Si9410DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SI9410DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si9410DY

    Abstract: No abstract text available
    Text: Si9410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SOĆ8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    Si9410DY P-38889--Rev. PDF

    Power MOSFET, Fairchild

    Abstract: Si9410DY
    Text: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    Si9410DY Power MOSFET, Fairchild PDF

    Si4410DY

    Abstract: Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8


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    Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96 PDF

    Untitled

    Abstract: No abstract text available
    Text: SI9410DY Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)70’ IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55


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    SI9410DY PDF

    HZG469

    Abstract: Si9410DY
    Text: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching


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    Si9410DY M3D315 OT96-1 MBK187 MBB076 HZG469 PDF

    Si9410DY

    Abstract: No abstract text available
    Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .


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    Si9410DY M3D315 OT96-1 OT96-1, PDF

    a-14-s

    Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ


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    Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96 a-14-s PDF

    Si9410DY-T1

    Abstract: Si9410DY 701.22
    Text: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.0 0.040 @ VGS = 5 V 6.0 0.050 @ VGS = 4.5 V 5.4 30 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410DY


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    Si9410DY Si9410DY-T1 18-Jul-08 701.22 PDF

    74ac123

    Abstract: u21a C277 RSMRST U21B FUSE-1A C278 1k33 r566 r564
    Text: 1 2 3 4 5 6 7 8 +5V VDD3 pull high at d/d bd pull high at d/d bd PWR_ON CPUPWR_ON 16,21 VDD3 14 12 R112 2 2 1 1 1 2 RSMRST# VDD3 C601 1U/NA 0805C 7,20 1 2 2 3 JP506 JP_SMT4_DFS JP505 JP_SMT4_DFS 1 S U510B 6 CEXT VCC GND 0/NA C594 0.1U 0603B Q14 SI9410DY_V/NA


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    SI9410DY 0603B 1000P 0603B DTC144WK OT23AN 74ac123 u21a C277 RSMRST U21B FUSE-1A C278 1k33 r566 r564 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 01 — 15 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .


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    Si9410DY M3D315 OT96-1 OT96-1, MBK187 MBB076 PDF

    Si9410DY

    Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
    Text: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D


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    Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96 Siliconix PDF

    Si9410DY

    Abstract: No abstract text available
    Text: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SO-8 N/C 8 D 2 7 D 3 6 D 5 D 1 S S G 4 G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    Si9410DY S-00652--Rev. 27-Mar-00 PDF

    AW SO-8

    Abstract: No abstract text available
    Text: Si9410DY Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    Si9410DY AW SO-8 PDF

    SI9410DY-T1

    Abstract: Si9410BDY-E3 Si9410BDY-T1-E3 SI9410DY Si9410BDY TF11 Si9410BDY-T1
    Text: Specification Comparison Vishay Siliconix Si9410BDY vs. Si9410DY Description: N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9410BDY Replaces Si9410DY Si9410BDY-E3 (Lead (Pb)-free version) Replaces Si9410DY Si9410BDY-T1 Replaces Si9410DY-T1


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    Si9410BDY Si9410DY Si9410BDY-E3 Si9410BDY-T1 Si9410DY-T1 Si9410BDY-T1-E3 TF11 PDF

    Si4410DY

    Abstract: Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ


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    Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96 PDF

    9959

    Abstract: No abstract text available
    Text: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


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    Si9410DY 9959 PDF

    Si9410DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    Si9410DY 0-to-10V 28-Apr-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.0 0.040 @ VGS = 5 V 6.0 0.050 @ VGS = 4.5 V 5.4 30 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410DY


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    Si9410DY Si9410DY-T1 S-31060--Rev. 26-May-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 7.0 0.040 @ VGS = 5 V 6.0 0.050 @ VGS = 4.5 V 5.4 30 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410DY


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    Si9410DY Si9410DY-T1 08-Apr-05 PDF

    PN3904

    Abstract: in4148 smd diode CS5158 CS5158GD16 CS5158GDR16 IRL3103 MMUN2111T1 marking code SS SOT23 DRIVER MOSFET marking code SS SOT23 MOSFET DRIVER
    Text: CS5158 CPU 5-Bit Synchronous Buck Controller The CS5158 is a 5–bit synchronous dual N–Channel buck controller. It is designed to provide unprecedented transient response for today’s demanding high–density, high–speed logic. The regulator operates using a proprietary control method, which allows a 100 ns


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    CS5158 CS5158 r14525 CS5158/D PN3904 in4148 smd diode CS5158GD16 CS5158GDR16 IRL3103 MMUN2111T1 marking code SS SOT23 DRIVER MOSFET marking code SS SOT23 MOSFET DRIVER PDF

    2N3906

    Abstract: CS5165H CS5165HGDW16 CS5165HGDWR16 IRL3103 SMD 2N3906 mosfet k 2698
    Text: CS5165H 5-Bit Synchronous CPU Buck Controller The CS5165H synchronous 5–bit NFET buck controller is optimized to manage the power of the next generation Pentium II processors. It’s V2 control architecture delivers the fastest transient response 100 ns ,


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    CS5165H CS5165H r14525 CS5165H/D 2N3906 CS5165HGDW16 CS5165HGDWR16 IRL3103 SMD 2N3906 mosfet k 2698 PDF

    LT1438

    Abstract: rectifier diode m7 regulator ic 6562 LTC1439 CC2A m5d3 IRLML2803 LTC1438 LTC1438CG LTC1438CG-ADJ
    Text: LTC1438/LTC1439 Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1438/LTC1439 are dual, synchronous stepdown switching regulator controllers which drive external


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    LTC1438/LTC1439 1438/LTC1439 400kHz Effic6/LTC1436-PLL/ LTC1437 16-Pin LT1510 LTC1538-AUX LTC1539 14389fa LT1438 rectifier diode m7 regulator ic 6562 LTC1439 CC2A m5d3 IRLML2803 LTC1438 LTC1438CG LTC1438CG-ADJ PDF

    schematic diagram 12v ac/dc regulator

    Abstract: regulator 12v with stand by 220 ac voltage regulator without transformer schematic diagram 12v Simple DC Voltage Regulator L4992 TQFP32
    Text: L4992 TRIPLE OUTPUT POWER SUPPLY CONTROLLER DUAL PWM BUCK CONTROLLERS 3.3V and 5.1V 12V/120mA LINEAR REGULATOR DUAL SYNCH RECTIFIERS DRIVERS 96% EFFICIENCY ACHIEVABLE 50µA (@ 12V) STAND BY CONSUMPTION 5.5V TO 25V SUPPLY VOLTAGE EXCELLENT LOAD TRANSIENT RESPONSE


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    L4992 2V/120mA TQFP32 L4992 schematic diagram 12v ac/dc regulator regulator 12v with stand by 220 ac voltage regulator without transformer schematic diagram 12v Simple DC Voltage Regulator TQFP32 PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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