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    HZG469

    Abstract: PHN203
    Text: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PDF PHN203 M3D315 OT96-1 HZG469 PHN203

    HZG469

    Abstract: Si9410DY
    Text: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching


    Original     		PDF Si9410DY M3D315 OT96-1 MBK187 MBB076 HZG469

    HZG469

    Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
    Text: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.


    Original     		PDF PSMN008-75P/75B OT404, HZG469 PSMN008-75B PSMN008-75P 75b diode 75p diode