NPT25100
Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power
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Original
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NPT25100
2700MHz
10MHz
EAR99
NDS-001
NPT25100B
Gan on silicon substrate
Gan on silicon transistor
NPT25015
ECJ5YB2A105M
atc600f
ATC100B1R2BT
AC780BM-F2
GaN TRANSISTOR
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PDF
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PIMD3
Abstract: No abstract text available
Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz
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Original
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NPTB00004
2500MHz
EAR99
6000MHz
2500MHz,
NDS-002
PIMD3
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PDF
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PIMD3
Abstract: No abstract text available
Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power
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Original
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NPT25100
2700MHz
10MHz
3A982
NDS-001
PIMD3
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PDF
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NPT25100
Abstract: PIMD3
Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power
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Original
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NPT25100
2700MHz
10MHz
3A982
NDS-001
NPT25100
PIMD3
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PDF
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NPT25015
Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
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Original
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NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
NPT25015D
JESD22-A114
JESD22-A115
APP-NPT25015-25
NPT25015DT
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PDF
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Untitled
Abstract: No abstract text available
Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
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Original
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NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
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PDF
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NPT25015DT
Abstract: NPT25015DR
Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP
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Original
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NPT25015
2500-2700MHz
EAR99
200mA,
2500MHz,
NDS-004
NPT25015DT
NPT25015DR
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PDF
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AD-009
Abstract: ad009 NPTB00004 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603
Text: AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF power under single carrier OFDM WiMAX modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM
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Original
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AD-009
AD-009:
NPTB00004
AD-009
29dBm
150mA.
150ma
ad009
12101C105KAT2A
ATC600F330B
smd cap
Cer cap 100uf
ERJ-6BWJR033W
AD009 smd
CAP 27pf 100v 1 0603
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PDF
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nptb00004
Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100
Text: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz
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Original
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NPTB00004
2500MHz
EAR99
6000MHz
2500MHz,
NDS-002
NPTB00004DT
NPTB00004D
250v m1
APP-NPTB00004-25
NPTB00004DR
NBD-012
0J100
j105 250v
j105100
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PDF
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PIMD3
Abstract: No abstract text available
Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz
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Original
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NPTB00004
2500MHz
EAR99
6000MHz
2500MHz,
NDS-002
PIMD3
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PDF
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