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    Panasonic Electronic Components ECJ-5YB2A105M

    CAP CER 1UF 100V X7R 1812
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    Panasonic Electronic Components ECJ5YB2A105M

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    ECJ5YB2A105M Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ECJ5YB2A105M Panasonic CAP 1UF 100V 20% X7R SMD-1812 TR-7-PL Original PDF
    ECJ-5YB2A105M Panasonic Ceramic Capacitors, Capacitors, CAP CER 1UF 100V 20% X7R 1812 Original PDF

    ECJ5YB2A105M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT

    Untitled

    Abstract: No abstract text available
    Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Handling Precautions n Packging Specifications l Small in size and wide capacitance range l High humidity characteristic and long life


    Original     		PDF DC100V ECJ4YB2A224@ ECJ4YB2A474@ ECJ4YB2A684@ ECJ5YB2A105M

    IRF7832

    Abstract: IR2085S IRDC2085S-S PCC2224CT-ND bav16wdict zener db3 IRDC2085S-DF IRF7380 zener diode db2 IRF9956
    Text: IRDC2085S-S DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC


    Original     		PDF IRDC2085S-S IRDC2085S-DF IR2085S) IRF7493) IRF7832) IRF7380) IRF9956) 100mOhm 73mOhm IRF7832 IR2085S PCC2224CT-ND bav16wdict zener db3 IRF7380 zener diode db2 IRF9956

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ • Features ■ Recommended Applications ● Small size and wide capacitance range ● High humidity characteristic and long life ● Low inductance (ESL) and excellent frequency


    Original     		PDF DC100V ECJ5YB2A105M

    PIMD3

    Abstract: No abstract text available
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3

    NPT25100

    Abstract: PIMD3
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    IR2086S

    Abstract: BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380
    Text: IRDC2086S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2086S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated full-bridge DC-DC


    Original     		PDF IRDC2086S-DF IR2086S) IRF7493) IRF6603) IRF7380) IRF9956) IR2086S PQ20/16-3F3 IR2086S BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380

    NPT25015

    Abstract: NPT25015D EAR99 JESD22-A114 JESD22-A115 APP-NPT25015-25 NDS-004 NPT25015DT
    Text: NPT25015 Datasheet Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015D JESD22-A114 JESD22-A115 APP-NPT25015-25 NPT25015DT

    NPT35015

    Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT
    Text: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power


    Original     		PDF NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT

    Untitled

    Abstract: No abstract text available
    Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Precaution for Handling n Packging method l Small in size and wide capacitance range l Superior humidity characteristic and long life thanks


    Original     		PDF DC100V ECJ4YB2A224@ ECJ4YB2A474@ ECJ4YB2A684@ ECJ5YB2A105M

    NPT25015DT

    Abstract: NPT25015DR
    Text: NPT25015 Gallium Nitride 28V, 23W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz • 23W P3dB peak envelope power PEP


    Original     		PDF NPT25015 2500-2700MHz EAR99 200mA, 2500MHz, NDS-004 NPT25015DT NPT25015DR

    ECJ1VC2A100D

    Abstract: No abstract text available
    Text: Multilayer Ceramic Capacitors 100V, 200V Series Multilayer Ceramic Capacitors (100V, 200V Series) Series: ECJ • Features ■ Recommended Applications ■ Handling Precautions ■ Packaging Specifications ● Small size and wide capacitance range ● High humidity resistance and long life


    Original     		PDF ECJ5YB2A105M ECJ1VC2A100D

    Untitled

    Abstract: No abstract text available
    Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Precaution for Handling n Packging method l Small in size and wide capacitance range l Superior humidity characteristic and long life thanks


    Original     		PDF DC100V ECJ5YB2A105M

    NPTB00050

    Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115
    Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from


    Original     		PDF NPTB00050 4000MHz 500-1000MHz EAR99 450mA, 3000MHz, NDS-007 NPTB00050B Gan on silicon substrate ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115

    NPTB00050B

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    IR2085S

    Abstract: IRF7832 PCC2224CT-ND synchronous rectifier Zener Diode SOD323 IRDC2085S-DF IRF6603 IRF7380 IRF7493 IRF9956
    Text: IRDC2085S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC


    Original     		PDF IRDC2085S-DF IR2085S) IRF7493) IRF6603) IRF7380) IRF9956) 100mOhm 73mOhm IR2085S IRF7832 PCC2224CT-ND synchronous rectifier Zener Diode SOD323 IRF6603 IRF7380 IRF7493 IRF9956

    30Vn

    Abstract: zener diode db2 CAP 22u 1210 digi-key PQ TRANSFORMER IR2085S irf7832 RG2 DIODE IR2085 PCC2224CT-ND
    Text: IRDC2085S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2085S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated half-bridge DC-DC


    Original     		PDF IRDC2085S-DF IR2085S) IRF7493) IRF6618) IRF7380) IRF9956) 100mOhm 73mOhm 30Vn zener diode db2 CAP 22u 1210 digi-key PQ TRANSFORMER IR2085S irf7832 RG2 DIODE IR2085 PCC2224CT-ND

    ECJ3YB2A104

    Abstract: No abstract text available
    Text: Multilayer Ceramic Capacitors 100V 200V Multilayer Ceramic Chip Capacitors (100V, 200V Series) Series:ECJ n Features n Recommended Applications n Handling Precautions n Packging Specifications l Small in size and wide capacitance range l High humidity characteristic and long life


    Original     		PDF DC100V ECJ4YB2A224@ ECJ4YB2A474@ ECJ4YB2A684@ ECJ5YB2A105M ECJ3YB2A104