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MACOM CGH35060F2 RF MOSFET HEMT 28V 440193
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH35060F2	Tray	21		1	1 $288.44 10 $255.1 100 $255.1 1000 $255.1 10000 $255.1	Buy Now

CGH35060F Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH35060F2		Wolfspeed	60W GAN HEMT 28V 4.0GHZ FLANGE		Original	PDF
CGH35060F2		Wolfspeed	60W GAN HEMT 28V 4.0GHZ FLANGE		Original	PDF

CGH35060F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Tantalum Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	CGH35060F CGH35060F CGH3506 Tantalum CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060-TB s-parameter	PDF
CGH35060 Abstract: CGH35060F Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	CGH35060F CGH35060F CGH3506 10failure CGH35060	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	CGH35060F CGH35060F CGH3506	PDF
Untitled Abstract: No abstract text available Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for	Original	CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2	PDF
Untitled Abstract: No abstract text available Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for	Original	CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2	PDF
CGH35060 Abstract: CGH35060F 470PF CGH3506 CGH35060F-TB CGH35060-TB JESD22 Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and	Original	CGH35060F CGH35060F CGH3506 CGH35060 470PF CGH3506 CGH35060F-TB CGH35060-TB JESD22	PDF
Untitled Abstract: No abstract text available Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal	Original	CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1	PDF
CGH35060 Abstract: No abstract text available Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for	Original	CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060	PDF
Untitled Abstract: No abstract text available Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal	Original	CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1	PDF
16312 transistor Abstract: CGH35060F1-TB Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal	Original	CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1 16312 transistor CGH35060F1-TB	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F	PDF