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    CY62147DV30 Search Results

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    CY62147DV30 Price and Stock

    Rochester Electronics LLC CY62147DV30L-70BVI

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    DigiKey CY62147DV30L-70BVI Bulk 152
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    Infineon Technologies AG CY62147DV30L-55ZSXE

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey CY62147DV30L-55ZSXE Tube
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    Rochester Electronics LLC CY62147DV30L-55ZSXE

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey CY62147DV30L-55ZSXE Tube 42
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    Rochester Electronics LLC CY62147DV30L-55BVIT

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    DigiKey CY62147DV30L-55BVIT Bulk 137
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    Infineon Technologies AG CY62147DV30L-55BVXE

    IC SRAM 4MBIT PARALLEL 48VFBGA
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    DigiKey CY62147DV30L-55BVXE Tray
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    CY62147DV30 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62147DV30 Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L-55BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L-55BVXE Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L-55BVXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 48VFBGA Original PDF
    CY62147DV30L-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L-55ZSXE Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 44TSOP Original PDF
    CY62147DV30L-55ZSXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 55NS 44TSOP Original PDF
    CY62147DV30L-55ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L-70BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L-70BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30L-70ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL-45BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL-45BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL-45ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL-55BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL-55BVXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL-55ZSXI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF
    CY62147DV30LL-70BVI Cypress Semiconductor 4-Mbit (256K x 16) Static RAM Original PDF

    CY62147DV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62147CV25

    Abstract: CY62147CV30 CY62147CV33 CY62147DV30
    Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces


    Original     		PDF CY62147DV30 I/O15) 70-ns 45-ns 44-lead CY62147CV25 CY62147CV30 CY62147CV33 CY62147DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description Very high speed: 45 ns Temperature ranges ❐ Industrial: –40 °C to +85 °C • Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62147DV30


    Original     		PDF CY62147EV30 CY62147DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to +85°C — Automotive: –40°C to +125°C • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62147CV25, CY62147CV30, and


    Original     		PDF CY62147DV30 CY62147CV25, CY62147CV30, CY62147CV33 48-ball 44-pin 70-ns 45-ns 44-lead

    Untitled

    Abstract: No abstract text available
    Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable


    Original     		PDF CY62147DV30 I/O15) CY62147CV25, CY62147CV30, CY62147CV33 Writ56K 70-ns

    CY62147DV30

    Abstract: CY62147CV25 CY62147CV30 CY62147CV33
    Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces


    Original     		PDF CY62147DV30 I/O15) 70-ns 45-ns 44-lead CY62147DV30 CY62147CV25 CY62147CV30 CY62147CV33

    Untitled

    Abstract: No abstract text available
    Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The


    Original     		PDF CY62147DV30 I/O15) CY62147CV25, CY62147CV30, CY62147CV33 70-ns 45-ns 44-lead

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION CY62147DV30 4 Mb 256K x 16 Static RAM Features The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when:


    Original     		PDF CY62147DV30 CY62147CV25, CY62147CV30, CY62147CV33 48-ball 44-pin I/O15) CY62147DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces


    Original     		PDF CY62147DV30 I/O15) 70-ns 45-ns 44-lead

    AN1064

    Abstract: CY62147DV30 CY62147EV30 CY62147EV30LL
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly


    Original     		PDF CY62147EV30 48-pin AN1064 CY62147DV30 CY62147EV30LL

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL Automotive 4-Mbit 256K x 16 Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE


    Original     		PDF CY62147EV30 I/O15) CY62147DV30

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.


    Original     		PDF CY62147EV30 CY62147DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH


    Original     		PDF CY62147EV30 CY62147DV30 48-ball 44-pin 48-pin

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE


    Original     		PDF CY62147EV30 CY62147DV30 I/O15)

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features Functional Description • The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active


    Original     		PDF CY62147EV30

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    CY62147EV30LL-55BVXE

    Abstract: No abstract text available
    Text: CY62147EV30 4-Mbit 256K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH


    Original     		PDF CY62147EV30 CY62147DV30 48-ball 44-pin 48-pin CY62147EV30LL-55BVXE

    AN1064

    Abstract: CY62147DV30 CY62147EV30 CY62147EV30LL
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an


    Original     		PDF CY62147EV30 AN1064 CY62147DV30 CY62147EV30LL

    ball grid array image

    Abstract: CY62147DV30 CY62147EV30 CY62147EV30LL
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power


    Original     		PDF CY62147EV30 I/O15) CY62147DV30 ball grid array image CY62147DV30 CY62147EV30LL

    AN1064

    Abstract: CY62147DV30 CY62147EV30 CY62147EV30LL
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power


    Original     		PDF CY62147EV30 I/O15) CY62147DV30 AN1064 CY62147DV30 CY62147EV30LL

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL Automotive 4-Mbit 256K x 16 Static RAM Features also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE


    Original     		PDF CY62147EV30 CY62147DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly


    Original     		PDF CY62147EV30 CY62147DV30 48-ball 44-pin 48-pin

    AN1064

    Abstract: CY62147DV30 CY62147EV30 CY62147EV30LL
    Text: CY62147EV30 MoBL 4-Mbit 256K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power


    Original     		PDF CY62147EV30 I/O15) CY62147DV30 AN1064 CY62147DV30 CY62147EV30LL