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    Flip Electronics CY7C1046D-10VXI

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046D-10VXI Tube 100
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    Infineon Technologies AG CY7C1046D-10VXIT

    IC SRAM 4MBIT PARALLEL 32SOJ
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    Rochester Electronics LLC CY7C1046CV33-10VC

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046CV33-10VC Bulk 130
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    Rochester Electronics LLC CY7C1046BV33-12VC

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046BV33-12VC Bulk 40
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    Rochester Electronics LLC CY7C1046CV33-12VC

    IC SRAM 4MBIT PARALLEL 32SOJ
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    DigiKey CY7C1046CV33-12VC Bulk 137
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    CY7C1046 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1046 Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046B Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046B-12VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046B-15VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046B-20VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BN Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BN-15VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33 Cypress Semiconductor Memory : Async SRAMs Original PDF
    CY7C1046BV33-10 Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33-10VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33-12 Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33-12VC Cypress Semiconductor Memory : Async SRAMs Original PDF
    CY7C1046BV33-15 Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33-15VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33L-10VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33L-12VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046BV33L-15VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046CV33 Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046CV33-10VC Cypress Semiconductor 1M x 4 Static RAM Original PDF
    CY7C1046CV33-10VI Cypress Semiconductor Original PDF

    CY7C1046 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY7C1046BV33

    Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC
    Text: 046BV33 PRELIMINARY CY7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		046BV33 CY7C1046BV33 CY7C1046BV33 CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046DV33 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046CV33 • High speed — tAA = 10 ns • Low active power — ICC = 90 mA @ 10 ns • Low CMOS standby power — ISB2 = 10 mA • 2.0 V data retention


    Original     		CY7C1046DV33 CY7C1046CV33 400-mil-wide 32-pin CY7C1046DV33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description The CY7C1046D[1] is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW


    Original     		CY7C1046D CY7C1046D PDF

    CY7C1046BV33

    Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC
    Text: 33 PRELIMINARY CY7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		CY7C1046BV33 CY7C1046BV33 CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC PDF

    CY7C1046V33

    Abstract: CY7C1046V33-12VC CY7C1046V33-15VC
    Text: 3 ADVANCE INFORMATION CY7C1046V33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention)


    Original     		CY7C1046V33 CY7C1046V33 CY7C1046V33-12VC CY7C1046V33-15VC PDF

    CY7C1046

    Abstract: 7c1046
    Text: ADVANCED INFORMATION CY7C1046 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power(L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		CY7C1046 CY7C1046 7c1046 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power


    Original     		CY7C1046D CY7C1046B 400-mil-wide 32-pin CY7C1046D PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046DV33 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046CV33 • High speed — tAA = 10 ns • Low active power — ICC = 90 mA @ 10 ns • Low CMOS standby power — ISB2 = 10 mA • 2.0 V data retention


    Original     		CY7C1046DV33 CY7C1046CV33 400-mil-wide 32-pin CY7C1046DV33 PDF

    CY7C1046CV33

    Abstract: CY7C1046DV33 CY7C1046DV33-10VXI 30592
    Text: CY7C1046DV33 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description The CY7C1046DV33[1] is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an


    Original     		CY7C1046DV33 CY7C1046DV33 CY7C1046CV33 CY7C1046CV33 CY7C1046DV33-10VXI 30592 PDF

    1046C-3

    Abstract: CY7C1046CV33 CY7C1046CV33-10VC CY7C1046CV33-10VI
    Text: CY7C1046CV33 1M x 4 Static RAM Features • High speed — tAA = 10ns • Low active power for 10 ns speed — 324 mW max. • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features


    Original     		CY7C1046CV33 CY7C1046CV33 1046C-3 CY7C1046CV33-10VC CY7C1046CV33-10VI PDF

    CY7C1046B

    Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC
    Text: CY7C1046B CY7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		1CY7C1046B CY7C1046B CY7C1046B CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC PDF

    CY7C1046D-10VXI

    Abstract: V324 CY7C1046B CY7C1046D
    Text: CY7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power


    Original     		CY7C1046D CY7C1046B CY7C1046D CY7C1046D-10VXI V324 CY7C1046B PDF

    CY7C1046CV33

    Abstract: CY7C1046DV33 CY7C1046DV33-10VXI
    Text: CY7C1046DV33 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046CV33 • High speed — tAA = 10 ns • Low active power — ICC = 90 mA @ 10 ns • Low CMOS standby power — ISB2 = 10 mA • 2.0 V data retention


    Original     		CY7C1046DV33 CY7C1046CV33 CY7C1046DV33 CY7C1046CV33 CY7C1046DV33-10VXI PDF

    CY7C1046B

    Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC 046b
    Text: 046B CY7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		CY7C1046B CY7C1046B CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC 046b PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1046B The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is


    Original     		CY7C1046D CY7C1046D PDF

    CY7C1041BV33

    Abstract: CY7C1046BV33 CY7C1049BV33
    Text: Cypress Semiconductor Product Qualification Report QTP# 000305 VERSION 1.0 March, 2000 4 Meg Asynchronous SRAM R52D-3 Technology at Fab 4 CY7C1041BV33 256K x 16 Static RAM CY7C1046BV33 1M x 4 Static RAM CY7C1049BV33 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		R52D-3 CY7C1041BV33 CY7C1046BV33 CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1049BV33 R52-3D CY7C1049B-----------------------STRESS: CY7C1329-AC CY7C1041BV33 CY7C1046BV33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046DV33 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1046CV33 The CY7C1046DV33 is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is


    Original     		CY7C1046DV33 CY7C1046DV33 PDF

    CY7C1046B-15VC

    Abstract: CY7C1046B CY7C1046B-12VC
    Text: ADVANCE INFORMATION CY7C1046B 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected


    Original     		CY7C1046B CY7C1046B CY7C1046B-15VC CY7C1046B-12VC PDF

    V324

    Abstract: CY7C1046B CY7C1046D CY7C1046D-10VXI
    Text: CY7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power


    Original     		CY7C1046D CY7C1046B CY7C1046D V324 CY7C1046B CY7C1046D-10VXI PDF

    1046B-2

    Abstract: 1046b8
    Text: CY7C1046BN 1M x 4 Static RAM Features You write to the device by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the four IO pins (IO0 through IO3) is then written into the location specified on the address pins (A0 through A19). • Low active power


    Original     		CY7C1046BN 32-pin CY7C1046BN 1046B-2 1046b8 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Functional Description Features The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW


    Original     		CY7C1046D CY7C1046D CY7C1046B PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable


    Original     		CY7C1046D CY7C1046B PDF

    c1046

    Abstract: No abstract text available
    Text: V CYPRESS ADVANCED INFORMATION CY7C1046 1M x 4 Static RAM Features sion is provided by an active LO W C hip Enable CE , an active LO W O utput Enable (O E), and th re e -sta te drivers. W riting to th e de vice is a c c o m plished by ta kin g C hip Enable (CE) and


    OCR Scan     		CY7C1046 c1046 PDF

    CY7C1046

    Abstract: No abstract text available
    Text: V CYPRESS ADVANCED INFORMATION CY7C1046 1M x 4 Static RAM Features sion is provided by an active LO W C hip Enable CE , an active LO W O utput Enable (O E), and th re e -sta te drivers. W riting to th e de vice is a c c o m plished by ta kin g C hip Enable (CE) and


    OCR Scan     		CY7C1046 CY7C1046 PDF