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Flip Electronics CY7C1046D-10VXI IC SRAM 4MBIT PARALLEL 32SOJ
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DigiKey	CY7C1046D-10VXI	Tube			100	1 - 10 - 100 $5.75 1000 $5.75 10000 $5.75	Buy Now
Infineon Technologies AG CY7C1046D-10VXIT IC SRAM 4MBIT PARALLEL 32SOJ
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Rochester Electronics LLC CY7C1046CV33-10VC IC SRAM 4MBIT PARALLEL 32SOJ
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DigiKey	CY7C1046CV33-10VC	Bulk			130	1 - 10 - 100 - 1000 $2.31 10000 $2.31	Buy Now
Rochester Electronics LLC CY7C1046BV33-12VC IC SRAM 4MBIT PARALLEL 32SOJ
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DigiKey	CY7C1046BV33-12VC	Bulk			40	1 - 10 - 100 $7.58 1000 $7.58 10000 $7.58	Buy Now
Rochester Electronics LLC CY7C1046CV33-12VC IC SRAM 4MBIT PARALLEL 32SOJ
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DigiKey	CY7C1046CV33-12VC	Bulk			137	1 - 10 - 100 - 1000 $2.2 10000 $2.2	Buy Now

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CY7C1046 Datasheets (35)

Part	Manufacturer	Description	Datasheet Type	PDF
CY7C1046	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046B	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046B-12VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046B-15VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046B-20VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BN	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BN-15VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BV33	Cypress Semiconductor	Memory : Async SRAMs	Original	PDF
CY7C1046BV33-10	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BV33-10VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BV33-12	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BV33-12VC	Cypress Semiconductor	Memory : Async SRAMs	Original	PDF
CY7C1046BV33-15	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BV33-15VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF

CY7C1046BV33L-10VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BV33L-12VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046BV33L-15VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046CV33	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046CV33-10VC	Cypress Semiconductor	1M x 4 Static RAM	Original	PDF
CY7C1046CV33-10VI	Cypress Semiconductor		Original	PDF

CY7C1046 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CY7C1046BV33 Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC Text: 046BV33 PRELIMINARY CY7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	046BV33 CY7C1046BV33 CY7C1046BV33 CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC	PDF
Untitled Abstract: No abstract text available Text: CY7C1046DV33 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046CV33 • High speed — tAA = 10 ns • Low active power — ICC = 90 mA @ 10 ns • Low CMOS standby power — ISB2 = 10 mA • 2.0 V data retention	Original	CY7C1046DV33 CY7C1046CV33 400-mil-wide 32-pin CY7C1046DV33	PDF
Untitled Abstract: No abstract text available Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description The CY7C1046D[1] is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW	Original	CY7C1046D CY7C1046D	PDF
CY7C1046BV33 Abstract: CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC Text: 33 PRELIMINARY CY7C1046BV33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	CY7C1046BV33 CY7C1046BV33 CY7C1046BV33-10VC CY7C1046BV33-12VC CY7C1046BV33-15VC	PDF
CY7C1046V33 Abstract: CY7C1046V33-12VC CY7C1046V33-15VC Text: 3 ADVANCE INFORMATION CY7C1046V33 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power for 10 ns speed — 540 mW max. • Low CMOS standby power (L version) — 1.8 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention)	Original	CY7C1046V33 CY7C1046V33 CY7C1046V33-12VC CY7C1046V33-15VC	PDF
CY7C1046 Abstract: 7c1046 Text: ADVANCED INFORMATION CY7C1046 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power(L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	CY7C1046 CY7C1046 7c1046	PDF
Untitled Abstract: No abstract text available Text: CY7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power	Original	CY7C1046D CY7C1046B 400-mil-wide 32-pin CY7C1046D	PDF
Untitled Abstract: No abstract text available Text: CY7C1046DV33 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046CV33 • High speed — tAA = 10 ns • Low active power — ICC = 90 mA @ 10 ns • Low CMOS standby power — ISB2 = 10 mA • 2.0 V data retention	Original	CY7C1046DV33 CY7C1046CV33 400-mil-wide 32-pin CY7C1046DV33	PDF
CY7C1046CV33 Abstract: CY7C1046DV33 CY7C1046DV33-10VXI 30592 Text: CY7C1046DV33 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description The CY7C1046DV33[1] is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an	Original	CY7C1046DV33 CY7C1046DV33 CY7C1046CV33 CY7C1046CV33 CY7C1046DV33-10VXI 30592	PDF
1046C-3 Abstract: CY7C1046CV33 CY7C1046CV33-10VC CY7C1046CV33-10VI Text: CY7C1046CV33 1M x 4 Static RAM Features • High speed — tAA = 10ns • Low active power for 10 ns speed — 324 mW max. • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features	Original	CY7C1046CV33 CY7C1046CV33 1046C-3 CY7C1046CV33-10VC CY7C1046CV33-10VI	PDF
CY7C1046B Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC Text: CY7C1046B CY7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	1CY7C1046B CY7C1046B CY7C1046B CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC	PDF
CY7C1046D-10VXI Abstract: V324 CY7C1046B CY7C1046D Text: CY7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power	Original	CY7C1046D CY7C1046B CY7C1046D CY7C1046D-10VXI V324 CY7C1046B	PDF
CY7C1046CV33 Abstract: CY7C1046DV33 CY7C1046DV33-10VXI Text: CY7C1046DV33 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046CV33 • High speed — tAA = 10 ns • Low active power — ICC = 90 mA @ 10 ns • Low CMOS standby power — ISB2 = 10 mA • 2.0 V data retention	Original	CY7C1046DV33 CY7C1046CV33 CY7C1046DV33 CY7C1046CV33 CY7C1046DV33-10VXI	PDF
CY7C1046B Abstract: CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC 046b Text: 046B CY7C1046B 1M x 4 Static RAM Features • High speed — tAA = 12 ns • Low active power — 935 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	CY7C1046B CY7C1046B CY7C1046B-12VC CY7C1046B-15VC CY7C1046B-20VC 046b	PDF

Untitled Abstract: No abstract text available Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1046B The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is	Original	CY7C1046D CY7C1046D	PDF
CY7C1041BV33 Abstract: CY7C1046BV33 CY7C1049BV33 Text: Cypress Semiconductor Product Qualification Report QTP# 000305 VERSION 1.0 March, 2000 4 Meg Asynchronous SRAM R52D-3 Technology at Fab 4 CY7C1041BV33 256K x 16 Static RAM CY7C1046BV33 1M x 4 Static RAM CY7C1049BV33 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:	Original	R52D-3 CY7C1041BV33 CY7C1046BV33 CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1049BV33 R52-3D CY7C1049B-----------------------STRESS: CY7C1329-AC CY7C1041BV33 CY7C1046BV33	PDF
Untitled Abstract: No abstract text available Text: CY7C1046DV33 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1046CV33 The CY7C1046DV33 is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is	Original	CY7C1046DV33 CY7C1046DV33	PDF
CY7C1046B-15VC Abstract: CY7C1046B CY7C1046B-12VC Text: ADVANCE INFORMATION CY7C1046B 1M x 4 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1018 mW max. • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Original	CY7C1046B CY7C1046B CY7C1046B-15VC CY7C1046B-12VC	PDF
V324 Abstract: CY7C1046B CY7C1046D CY7C1046D-10VXI Text: CY7C1046D 4-Mbit 1M x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1046B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power — ICC = 90 mA @ 10 ns • Low CMOS Standby Power	Original	CY7C1046D CY7C1046B CY7C1046D V324 CY7C1046B CY7C1046D-10VXI	PDF
1046B-2 Abstract: 1046b8 Text: CY7C1046BN 1M x 4 Static RAM Features You write to the device by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the four IO pins (IO0 through IO3) is then written into the location specified on the address pins (A0 through A19). • Low active power	Original	CY7C1046BN 32-pin CY7C1046BN 1046B-2 1046b8	PDF
Untitled Abstract: No abstract text available Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Functional Description Features The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW	Original	CY7C1046D CY7C1046D CY7C1046B	PDF
Untitled Abstract: No abstract text available Text: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable	Original	CY7C1046D CY7C1046B	PDF
c1046 Abstract: No abstract text available Text: V CYPRESS ADVANCED INFORMATION CY7C1046 1M x 4 Static RAM Features sion is provided by an active LO W C hip Enable CE , an active LO W O utput Enable (O E), and th re e -sta te drivers. W riting to th e de vice is a c c o m plished by ta kin g C hip Enable (CE) and	OCR Scan	CY7C1046 c1046	PDF
CY7C1046 Abstract: No abstract text available Text: V CYPRESS ADVANCED INFORMATION CY7C1046 1M x 4 Static RAM Features sion is provided by an active LO W C hip Enable CE , an active LO W O utput Enable (O E), and th re e -sta te drivers. W riting to th e de vice is a c c o m plished by ta kin g C hip Enable (CE) and	OCR Scan	CY7C1046 CY7C1046	PDF

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Rochester Electronics LLC CY7C1046CV33-12VC

CY7C1046 Datasheets (35)

CY7C1046 Datasheets Context Search

CY7C1046BV33

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Untitled

CY7C1046BV33

CY7C1046V33

CY7C1046

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CY7C1046CV33

1046C-3

CY7C1046B

CY7C1046D-10VXI

CY7C1046CV33

CY7C1046B

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CY7C1041BV33

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CY7C1046B-15VC

V324

1046B-2

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c1046

CY7C1046