sht22
Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
Text: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_
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Original
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EBSA-110
SHT20,
ebsa110
sht22
SHT12
5BE1
EL114
6nc3
SHT20
RAM128KX8
SHT13
VG-468
57BE2
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DQ620
Abstract: No abstract text available
Text: VS864648041.VS1664648041B 8M,16Mx64-Bit SDRAM Module Preliminary Description The VS864648041B and VS1664648041B are 8Mx64-bit and 16Mx64-bit dual-in-line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 8MxB synchronous DRAM (VG36648041BT), and each in a standard 54 pin TSOP package. The VS864648041B and VS1664648041B
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VS864648041
VS1664648041B
16Mx64-Bit
VS864648041B
8Mx64-bit
VG36648041BT)
DQ620
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Untitled
Abstract: No abstract text available
Text: VS26417801 C,VS46417801C 2M,4MX64-Bit SDRAM Module VIS Description The V S 264 17 8 0 1 C and V S 4 6 4 1 7 8 0 1 C are 2M x 64 - bit and 4M x 64 - bit dual - in - line syn ch ro n o u s dynam ic RAM m odule D R A M V G 3617801C T , (D IM M ). and each It
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VS26417801
VS46417801C
4MX64-Bit
3617801C
G5-0156
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Untitled
Abstract: No abstract text available
Text: KMM372F400BK/BS KMM372F410BK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCR IPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM372F400BK/BS
KMM372F410BK/BS
KMM372F41OBK/BS
4Mx72
KMM372F40
KMM372F400BK
cycles/64ms
KMM372F400BS
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7232F0EG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232F0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.
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THMY7232F0EG-75
432-WORD
72-BIT
THMY7232F0EG
TC59SM704FT
72-bit
THMY7232F0EG)
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PDF
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DQ380-V
Abstract: r2a11 DQ500-V
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC727 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C -4 5 6 4 E C 7 2 7 is a 6 7 ,1 0 8 ,8 6 4 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 36 piece s of
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MC-4564EC727
72-BIT
MC-4564EC727
uPD45128441
DQ380-V
r2a11
DQ500-V
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PDF
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Untitled
Abstract: No abstract text available
Text: VS864648041 D,VS1664648041D 8M,16MX64-Bit SDRAM Module Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-ln-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4 banks and in standard 54 pin TSOP-II package. Decoupling capacitors are mounted on power supply line for
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VS864648041
VS1664648041D
16MX64-Bit
VS864648041D
VG36648041DT)
PC100/JEDEC
PC133
VS864648041D)
VS1664648041D)
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lg protocol
Abstract: CB165
Text: GMM76416383CTG-5/6 LG Semicon Co.,Ltd. 16,777,216W ORDS x 64 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 76416383CTG is an 16M x 64 bits D ynamic RAM M ODULE which is assembled 16 pieces o f 16M x 4bit DRAM s in 32 pin TSOP n package, one 2k EEPROM for SPD in 8-pin
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GMM76416383CTG
76416383CTG
GMM76416383CTG-5/6
76416383CTG
GMM76416383CTG
lg protocol
CB165
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PDF
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630DQ
Abstract: No abstract text available
Text: GMM77332280CTG-5/6 LG Semicon Co.,Ltd. 33,554,432 WORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 77332280CTG is an 32M x 72 bits D ynamic RAM MODULE w hich is assembled 36 pieces o f 16M x 4bit DRAM s in 32 pin T S O P -n package, two 20bit driver ICs in
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GMM77332280CTG
20bit
56pin
77332280CTG
M77332280CTG
77332280CTG
GMM77332280CTG-5/6
630DQ
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PDF
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640-DQ
Abstract: DQ620 22 Tantal 710-DQO
Text: GMM77316280CNSG-5/6 LG Semicon Co.,Ltd. 16,777,216 W ORDS x 72 BIT CMOS DYNAMIC RAM MODULE Description Features The G M M 77316280CNSG is an 16M x 72 bits Dynamic RAM M ODULE w hich is assembled 18 pieces o f 8M x 8bit DRAM s in 32 pin SOJ package and tw o 16bit driver ICs in 48pin
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GMM77316280CNSG
16bit
48pin
77316280CNSG
GMM77316280CNSG-5/6
77316280CNSG
GMM7731628QCNSG-5/6
640-DQ
DQ620
22 Tantal
710-DQO
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PDF
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intel 80 82
Abstract: DQ-460 7801G DQM02 dg550
Text: VS26417801B.VS46417801B 2M,4Mx64-Bit SDRAM Module Description The VS26417801B and VS46417801B are 2M x 64 - bit and 4M x 64 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 8/16 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS26417801B and
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VS26417801B
VS46417801B
4Mx64-Bit
VG3617801BT)
VS26417801B,
VS46417801B
intel 80 82
DQ-460
7801G
DQM02
dg550
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