433.92 mhz
Abstract: No abstract text available
Text: Flexibility & Innovation …. DS0420V. 01 25/09/02 DATA SHEET TSF0433-07 433.92 MHZ SAW FILTER PRELIMINARY SPECIFICATION PACKAGE SMD5 PRODUCT FEATURES : 1.5±0.12 Ø LOW LOSS Ø SMALL SMD PACKAGE Ø NARROW BAND 1.27 TYP. 2.54 TYP. 5.00±0.20 4 CONTACT : 3
|
Original
|
PDF
|
TSF0433-07
DS0420V.
433.92 mhz
|
Untitled
Abstract: No abstract text available
Text: Flexibility & Innovation …. DS0420 V. 01 25/09/02 DATA SHEET 5 TSF0433-07 433.92 MHZ SAW FILTER PRELIMINARY SPECIFICATION PACKAGE SMD5 PRODUCT FEATURES : 1.5±0.12 Ø LOW LOSS Ø SMALL SMD PACKAGE Ø NARROW BAND 1.27 TYP. CONTACT : 2.54 TYP. 5.00±0.20 4
|
Original
|
PDF
|
DS0420
TSF0433-07
|
sg 421
Abstract: mikroelektronik ic data Electromechanical Filter 10.7 ku 201 Piezoelectric 10Mhz FAR-F4DA-155M52-G201 FAR-F4DA-51M840-G201 FAR-F4DA-97M728-G201 far-f4 Fujitsu SAW
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (L iTaO3) that has large electromechanical
|
Original
|
PDF
|
DS04-20101-1E
300MHz)
300MHz.
300MHz
sg 421
mikroelektronik ic data
Electromechanical Filter 10.7
ku 201
Piezoelectric 10Mhz
FAR-F4DA-155M52-G201
FAR-F4DA-51M840-G201
FAR-F4DA-97M728-G201
far-f4
Fujitsu SAW
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (L iTaO3) that has large electromechanical
|
Original
|
PDF
|
DS04-20101-1E
300MHz)
300MHz.
300MHz
D-63303
F9803
|
2M04
Abstract: 16.384Mhz OSC 2.048MHz 34.368MHz data sheet IC LM 335 ic 544 FAR-F1DA-1M5440-G201 FAR-F1DA-1M5440-G202 FAR-F1DA-1M5440-G203 FAR-F1DA-1M5440-G205
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital
|
Original
|
PDF
|
DS04-20100-3E
100MHz)
100MHz
35MHz:
400ppm
100MHz:
30ppm/ponsible
F9703
2M04
16.384Mhz
OSC 2.048MHz
34.368MHz
data sheet IC LM 335
ic 544
FAR-F1DA-1M5440-G201
FAR-F1DA-1M5440-G202
FAR-F1DA-1M5440-G203
FAR-F1DA-1M5440-G205
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (LiTaO3) that has large electromechanical
|
Original
|
PDF
|
DS04-20101-1E
300MHz)
300MHz.
300MHz
F9608
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital communication devices.
|
Original
|
PDF
|
DS04-20100-3E
100MHz)
100MHz
35MHz:
400ppm
100MHz:
30ppm/Â
F9703
|
2M04
Abstract: 16-M3 F3 Series
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital communication devices.
|
Original
|
PDF
|
DS04-20100-3E
100MHz)
100MHz
35MHz:
400ppm
100MHz:
30ppm/
F9703
2M04
16-M3
F3 Series
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.
|
Original
|
PDF
|
AGRB10XM
AGRB10
DS04-203RFPP
DS04-140RFPP)
|
6m312
Abstract: 3m152 2M04 1330DE
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION BANDPASS FILTER 1.5 to 100MHz F1/F2/F3 SERIES • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary, and tertiary digital communication devices.
|
Original
|
PDF
|
DS04-20100-3E
100MHz)
100MHz
35MHz:
400ppm
100MHz:
30ppm/
F9703
6m312
3m152
2M04
1330DE
|
transistor equivalent table 557
Abstract: 21045F
Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
|
Original
|
PDF
|
AGR18030EF
DS04-204RFPP
PB04-101RFPP)
transistor equivalent table 557
21045F
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-20101-1E ASSP TIMING EXTRACTION FILTER 50 to 300MHz F4 SERIES • DESCRIPTION The F4 series are timing extraction filter used in the high-grade digital transmission equipment like wide-band ISDN. The F4 series uses a single lithium tantalate piezoelectric crystal (LiTaO3) that has large electromechanical
|
Original
|
PDF
|
DS04-20101-1E
300MHz)
300MHz.
300MHz
F9608
|
AGR21030EF
Abstract: AGR21030XF JESD22-C101A J622
Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
|
Original
|
PDF
|
AGR21030EF
AGR21030EF
DS04-225RFPP
DS04-200RFPP)
AGR21030XF
JESD22-C101A
J622
|
AGR18030EF
Abstract: JESD22-C101A
Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
|
Original
|
PDF
|
AGR18030EF
AGR18030EF
DS04-204RFPP
PB04-101RFPP)
JESD22-C101A
|
|
|
AGR21030E
Abstract: AGR21030EF AGR21030EU JESD22-C101A
Text: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
|
Original
|
PDF
|
AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
performance-12,
DS04-200RFPP
DS04-163RFPP)
AGR21030EF
AGR21030EU
JESD22-C101A
|
ATC100B101JW500X
Abstract: 08055C103KATMA AGRA10XM cdm 316 JESD22-C101A ATC100B1R0BW500
Text: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Device Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for personal cellular band IS-95 865 MHz to
|
Original
|
PDF
|
AGRA10XM
AGRA10
IS-95
withstan09-9138
DS04-257RFPP
DS04-202RFPP)
ATC100B101JW500X
08055C103KATMA
AGRA10XM
cdm 316
JESD22-C101A
ATC100B1R0BW500
|
Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. IDT54/74FCT245/A/C IDT54/74FCT640/A/C IDT54/74FCT645/A/C FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS FEATURES: DESCRIPTION: • IDT54/74FCT245/640/645 equivalent to FAST speed and drive The IDT octal bidirectional transceivers are built using
|
OCR Scan
|
PDF
|
IDT54/74FCT245/A/C
IDT54/74FCT640/A/C
IDT54/74FCT645/A/C
IDT54/74FCT245/640/645
IDT54/74FCT245/A/C,
IDT54/74FCT640/A/C
IDT54/
74FCT645/A/C
|
Untitled
Abstract: No abstract text available
Text: n FUJITSU SEMICONDUCTOR DATA SHEET DS04-20100-3E ASSP TIMING EXTRACTION • DESCRIPTION The F1, F2 and F3 Series were developed as timing extraction filters for primary, secondary and tertiary digital communication devices. This new all-solid-state bandpass filter BPF uses a piezoelectric with a large electromechanical coefficient
|
OCR Scan
|
PDF
|
DS04-20100-3E
10OMFIz
35MHz:
400ppm
100MHz:
-30ppm/Â
500ppm
F9703
|
