Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Elite Semiconductor Memory Technology Inc. Publication Date: Aug. 2005 Revision: 0.2 1/46 ESMT SDRAM
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M12L128324A
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esmt M12L128324A
Abstract: M12L128324A-7TGI M12L128324A-6BI
Text: ESMT M12L128324A Operation temperature condition -40°C~85°C Revision History Revision 1.0 Jan. 16 2006 -Original Revision 1.1(Feb. 14 2006) -Modify ICC2P; ICC4; ICC5 spec -Modify product no. of ordering information Elite Semiconductor Memory Technology Inc.
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M12L128324A
esmt M12L128324A
M12L128324A-7TGI
M12L128324A-6BI
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M12L128324A-7TG
Abstract: esmt M12L128324A M12L128324A-6BG M12L128324A-6TG
Text: ESMT M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Revision 1.0 (Dec. 22 2005) -Delete “Preliminary” from datasheet -Add 90BGA Packing Dimension Revision 1.1 (Feb. 14 2006)
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M12L128324A
90BGA
M12L128324A-7TG
esmt M12L128324A
M12L128324A-6BG
M12L128324A-6TG
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Untitled
Abstract: No abstract text available
Text: ESMT M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Revision 1.0 (Dec. 22 2005) -Delete “Preliminary” from datasheet -Add 90BGA Packing Dimension Elite Semiconductor Memory Technology Inc.
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Original
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M12L128324A
90BGA
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M12L128324A-6BG
Abstract: M12L128324A-6TG M12L128324A-7TG
Text: ESMT M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Revision 1.0 (Dec. 22 2005) -Delete “Preliminary” from datasheet -Add 90BGA Packing Dimension Revision 1.1 (Feb. 14 2006)
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M12L128324A
90BGA
M12L128324A-6BG
M12L128324A-6TG
M12L128324A-7TG
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M12L128324A-5BG2E
Abstract: BGA90
Text: ESMT M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs
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M12L128324A
M12L128324A-5BG2E
M12L128324A-6BG2E
M12L128324A-7BG2E
200MHz
166MHz
143MHz
M12L128324A
BGA90
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Untitled
Abstract: No abstract text available
Text: ESMT M12L128324A 2E SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3)
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M12L128324A
M12L128324A-5BG2E
200MHz
M12L128324A-6BG2E
166MHz
M12L128324A-7BG2E
143MHz
M12L128324A
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Untitled
Abstract: No abstract text available
Text: ESMT M12L128324A 2M SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (1, 2 & 3 )
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M12L128324A
M12L128324A-6BG2M
166MHz
M12L128324A-7BG2M
143MHz
M12L128324A
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Untitled
Abstract: No abstract text available
Text: ESMT M12L128324A 2E Operation Temperature Condition -40°C~85°C SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs
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M12L128324A
M12L128324A-5BIG2E
200MHz
M12L128324A-6BIG2E
166MHz
M12L128324A-7BIG2E
143MHz
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M12L128324A-6TG
Abstract: M12L128324A-6BG M12L128324A-7TG
Text: ESMT M12L128324A SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 1, 2 & 3 - Burst Length ( 1, 2, 4, 8 & full page )
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M12L128324A
M12L128324A-6TG
166MHz
M12L128324A-7TG
143MHz
M12L128324A-6BG
M12L128324A-7BG
M12L128324A-6TG
M12L128324A-6BG
M12L128324A-7TG
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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Untitled
Abstract: No abstract text available
Text: ESM T M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs
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Original
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M12L128324A
M12L128324A-5BG2E
200MHz
M12L128324A-6BG2E
166MHz
M12L128324A-7BG2E
143MHz
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