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ROHM Semiconductor RGT40NS65DGTL IGBT TRENCH FIELD 650V 40A LPDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT40NS65DGTL	Digi-Reel	6,964		1	1 $3.47 10 $2.261 100 $3.47 1000 $1.2833 10000 $1.2833	Buy Now
	RGT40NS65DGTL	Cut Tape	6,964		1	1 $3.47 10 $2.261 100 $3.47 1000 $1.2833 10000 $1.2833	Buy Now
	RGT40NS65DGTL	Reel	5,000		1,000	1 - 10 - 100 - 1000 $1.18923 10000 $1.115	Buy Now
Mouser Electronics	RGT40NS65DGTL		1,941			1 $2.66 10 $1.97 100 $1.43 1000 $1.18 10000 $1.11	Buy Now
TTI	RGT40NS65DGTL	Reel			1,000	1 - 10 - 100 - 1000 $1.36 10000 $1.36	Buy Now
TME	RGT40NS65DGTL				1	1 $2.17 10 $1.94 100 $1.55 1000 $1.44 10000 $1.44	Get Quote
Ameya Holding Limited	RGT40NS65DGTL		366		1	1 $2.2736 10 $2.0482 100 $1.6464 1000 $1.1172 10000 $1.1172	Buy Now

Chip1Stop	RGT40NS65DGTL	Cut Tape	2,675			1 $2.32 10 $1.93 100 $1.54 1000 $1.01 10000 $0.965	Buy Now
CoreStaff Co Ltd	RGT40NS65DGTL		884			1 $5.856 10 $1.448 100 $0.881 1000 $0.83 10000 $0.83	Buy Now
ROHM Semiconductor RGT40NL65DGTL IGBT TRENCH FIELD 650V 40A LPDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT40NL65DGTL	Digi-Reel	2,394		1	1 $4.18 10 $2.751 100 $4.18 1000 $1.59202 10000 $1.59202	Buy Now
	RGT40NL65DGTL	Cut Tape	2,394		1	1 $4.18 10 $2.751 100 $4.18 1000 $1.59202 10000 $1.59202	Buy Now
	RGT40NL65DGTL	Reel	2,000		1,000	1 - 10 - 100 - 1000 $1.48072 10000 $1.4375	Buy Now
Mouser Electronics	RGT40NL65DGTL		1,168			1 $3.07 10 $2.42 100 $1.77 1000 $1.43 10000 $1.43	Buy Now
Avnet Silica	RGT40NL65DGTL			25 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	RGT40NL65DGTL	Cut Tape	23			1 $2.82 10 $2.22 100 $2.22 1000 $2.22 10000 $2.22	Buy Now
CoreStaff Co Ltd	RGT40NL65DGTL		950			1 $2.142 10 $1.756 100 $0.937 1000 $0.843 10000 $0.843	Buy Now
Goford Semiconductor GT400P10K MOSFET P-CH 100V 35A TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT400P10K	Cut Tape	1,205		1	1 $1.76 10 $1.19 100 $1.76 1000 $0.63503 10000 $0.63503	Buy Now
	GT400P10K	Digi-Reel	1,205		1	1 $1.76 10 $1.19 100 $1.76 1000 $0.63503 10000 $0.63503	Buy Now
Verical	GT400P10K		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.51	Buy Now
ROHM Semiconductor RGT40NS65DGC9 IGBT TRENCH FIELD 650V 40A TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT40NS65DGC9	Tube	1,000		1	1 $2.98 10 $1.962 100 $2.98 1000 $2.98 10000 $2.98	Buy Now
Mouser Electronics	RGT40NS65DGC9		1,000			1 $2.22 10 $1.73 100 $1.48 1000 $1.47 10000 $1.47	Buy Now
Chip1Stop	RGT40NS65DGC9	Tube	50			1 $1.44 10 $1.21 100 $1.07 1000 $1.07 10000 $1.07	Buy Now
CoreStaff Co Ltd	RGT40NS65DGC9		50			1 $0.591 10 $0.575 100 $0.553 1000 $0.55 10000 $0.55	Buy Now
ROHM Semiconductor RGT40TS65DGC13 IGBT TRENCH FS 650V 40A TO247G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RGT40TS65DGC13	Tube	600		1	1 $10.03 10 $10.03 100 $5.933 1000 $4.61749 10000 $4.61749	Buy Now
Newark	RGT40TS65DGC13	Bulk	30		1	1 $6.31 10 $5.81 100 $4.8 1000 $4.8 10000 $4.8	Buy Now
TTI	RGT40TS65DGC13	Tube			600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ameya Holding Limited	RGT40TS65DGC13		30		1	1 $7.76 10 $7.02 100 $6.26 1000 $4.86 10000 $4.47	Buy Now
Chip1Stop	RGT40TS65DGC13	Tube	120			1 $5.82 10 $5.59 100 $4.14 1000 $4.14 10000 $4.14	Buy Now

CoreStaff Co Ltd	RGT40TS65DGC13		30			1 $7.358 10 $2.167 100 $1.647 1000 $1.609 10000 $1.609	Buy Now

Find more GT40 price and stock on Findchips.com

GT40 Datasheets (74)

Part	Manufacturer	Description	Datasheet Type	PDF
GT-40	MCE / KDI	ATTENUATOR, PIN DIODE	Original	PDF
GT40	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT40	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT40	Unknown	Vintage Transistor Datasheets	Scan	PDF
GT400S400A	Carlo Gavazzi	Relays - Accessories - TOR SCREW 400A 260-400A	Original	PDF
GT402A	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT402B	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT402D	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT402E	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT402G	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT402I	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT402SZ	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
GT402V	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT403A	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF

GT403B	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT403D	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT403E	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT403G	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT403I	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
GT403J	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF

GT40 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GT40Q323 Abstract: No abstract text available Text: GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector	Original	PDF	GT40Q323 GT40Q323
Untitled Abstract: No abstract text available Text: GT40J325 Discrete IGBTs Silicon N-Channel IGBT GT40J325 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	PDF	GT40J325
GT40J121 Abstract: No abstract text available Text: GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	PDF	GT40J121 GT40J121
Untitled Abstract: No abstract text available Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)	Original	PDF	GT40T101 2-21F2C
VS-GT400TH120N Abstract: No abstract text available Text: VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient	Original	PDF	VS-GT400TH120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GT400TH120N
GT40G121 Abstract: No abstract text available Text: GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs Typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (Typ.) (IC = 60 A)	Original	PDF	GT40G121 GT40G121
Parallel resonance inverter Abstract: TOSHIBA IGBT DATA BOOK GT40T301 GT40 Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	PDF	GT40T301 Parallel resonance inverter TOSHIBA IGBT DATA BOOK GT40T301 GT40
Untitled Abstract: No abstract text available Text: GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction PFC Applications Note: The product(s) described herein should not be used for any other application.	Original	PDF	GT40J121
Untitled Abstract: No abstract text available Text: GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)	Original	PDF	GT40WR21
Untitled Abstract: No abstract text available Text: GT40RR21 Discrete IGBTs Silicon N-Channel IGBT GT40RR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)	Original	PDF	GT40RR21
GT40T102 Abstract: No abstract text available Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)	Original	PDF	GT40T102 2-21F2C GT40T102
GT40T301 Abstract: No abstract text available Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 40 A)	Original	PDF	GT40T301 GT40T301
GT40Q322 Abstract: No abstract text available Text: GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT40Q322 Preliminary Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed : tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector	Original	PDF	GT40Q322 GT40Q322
Parallel resonance inverter Abstract: GT40T302 Text: GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf = 0.23 s typ. (IC = 40 A)	Original	PDF	GT40T302 Parallel resonance inverter GT40T302

Untitled Abstract: No abstract text available Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	PDF	GT40T321
Untitled Abstract: No abstract text available Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)	Original	PDF	GT40T301 2-21F2C
IEGT Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)	Original	PDF	GT40Q321 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter
40t321 Abstract: GT40T321 gt40t Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed	Original	PDF	GT40T321 40t321 GT40T321 gt40t
GT40M101 Abstract: 216F Text: GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High input impedance High speed Low saturation voltage : tf = 0.4µs Max. : VCE(sat) = 3.4V (Max.) Enhancement mode type MAXIMUM RATINGS (Ta = 25°C)	Original	PDF	GT40M101 2-16F GT40M101 216F
Untitled Abstract: No abstract text available Text: GT40T101 HIGH POWER SWITCHING APPLICATIONS. U nit in mm 80.JMAX. • Enhancement-Mode • High Speed • Low Saturation : V c e sat = 5.0V (Max.) (Ic = 40A) h * J¡ : tf=0.4^is (Max.) (Iq = 40A) ¥ , = g j \| . 1 1.5 , i r 7 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	GT40T101 2-21F2C CHARACTERISTICST40T101
Untitled Abstract: No abstract text available Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)	OCR Scan	PDF	GT40T101
GT40M301 Abstract: ED 05 Diode Text: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40M301 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25^s TYP.	OCR Scan	PDF	GT40M301 GT40M301 ED 05 Diode
GT40 Abstract: No abstract text available Text: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE fiTJil M 301 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode • H ig h s p e e d IG B T : t f = 0 .25^8 TYP.	OCR Scan	PDF	GT40M301 GT40
VQE 24 Abstract: GT40M101 Text: GT40M101 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf^ O .^ s Max. Low Saturation Voltage : V C E (sa t)~ 3 .4 V (Max.) Enhancement-Mode	OCR Scan	PDF	GT40M101 GT40M1 2-16F VQE 24 GT40M101

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GT40 Search Results

GT40 Price and Stock

ROHM Semiconductor RGT40NS65DGTL

ROHM Semiconductor RGT40NL65DGTL

Goford Semiconductor GT400P10K

ROHM Semiconductor RGT40NS65DGC9

ROHM Semiconductor RGT40TS65DGC13

GT40 Datasheets (74)

GT40 Datasheets Context Search

GT40Q323

Untitled

GT40J121

Untitled

VS-GT400TH120N

GT40G121

Parallel resonance inverter

Untitled

Untitled

Untitled

GT40T102

GT40T301

GT40Q322

Parallel resonance inverter

Untitled

Untitled

IEGT

40t321

GT40M101

Untitled

Untitled

GT40M301

GT40

VQE 24