Untitled
Abstract: No abstract text available
Text: Preliminary HW3238C Hexawave, Inc. Power Module 3/16/98 Outline Drawing Features l Frequency : 3.4 ~ 3.6 GHz l High Linearity l 50 ohm Input/ Output Impedances Maximum Ratings TC=25¢ Parameters J Symbol Value Unit DC Supply Voltage VDD 8 V DC Supply Voltage
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HW3238C
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0734
Abstract: FET 3878 Z070
Text: HEXAWAVE HWL36NPC Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The H W L36N PC is a medium Power G aA s FET using H exaw ave proprietary surface mount type plastic package with special heat slug for various L-Band applications. It is suitable for various 9 00 M Hz, 1900
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HWL36NPC
HWL36N
700mA
0734
FET 3878
Z070
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Untitled
Abstract: No abstract text available
Text: HEXAWAVE HWP815-6B Hexawave, Inc. UHF Power Module Features • Applicable for Trunking Radio • Frequency : 806 ~ 825 MHz • High Efficiency 58% • 50 ohm Input/Output Impedances • Guaranteed Stability & Ruggedness Maximum Ratings (Tc=25 °c ) Parameters
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HWP815-6B
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L 0929
Abstract: s 0934 91564
Text: HSXAWAVS HWL34YRA L-Band Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. 1.625 0 .065 Features • Low Cost GaAs Power FET
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HWL34YRA
HWL34YRA
L 0929
s 0934
91564
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5964 fet
Abstract: No abstract text available
Text: HSXAWAVS HWL36YRF Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL36YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Features • Low Cost GaAs Po wer FET
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HWL36YRF
HWL36YRF
-17M93
Vds-10
5964 fet
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s3v 72
Abstract: No abstract text available
Text: HEXAWAVE HWL23NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL23NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
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HWL23NPB
HWL23NPB
200mA
ids-55m
s3v 72
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TC 9147
Abstract: HWC27
Text: HSXAWAVS HWC27YUB C-Band Medium Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWC27YUB is a Medium Power GaAs FET employing Hexawave's unique fabrication process. It provides high breakdown voltage and excellent linearity. Features 2 -# 1 .8 *0 .0 1
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HWC27YUB
28dBm,
C27YUB
TC 9147
HWC27
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M3508-20
Abstract: No abstract text available
Text: HEXAWAVS HW947-1B Hexawave, Inc. 900MHz UHF GaAs FET Power Module Features Applicable for AMPS Cellular Phone Frequency : 824 ~ 849 MHz High Efficiency 50 ohm Input/Output Impedances Guaranteed Stability' & Ruggedness Maximum Ratings Tc=25 °c Parameters
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HW947-1B
900MHz
M3508-20
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IN 5406
Abstract: F24G 1S121 M 16100 39 2 1019
Text: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.
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HWC27NC
HWC30NC
HWC34NC
chip67
IN 5406
F24G
1S121
M 16100 39 2 1019
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Untitled
Abstract: No abstract text available
Text: M L HcXAWAVE HWP1720-6 Hexawave, Inc. Medium Power GaAs Amplifier Description Block Diagram The HW P1720-6 is a G aAs MMIC amplifier designed for low voltage applications where high efficiency is required. VDDl VDD2 VDD3 The nominal output power is more than 600 mW at 1.9 GHz when
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HWP1720-6
HWP1720-6
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0117 0317
Abstract: 6537 fet
Text: J R , HEXAWAV5 HWL26NPA Hexawave, Inc. L-Band Power GaAs FET 6/18/98 Description Rev. A Outline Dimensions The H W L26N PA is a m edium Pow er G aA s FET using surface m ount type plastic package for various L -B and applications. It is suitable for various 900
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HWL26NPA
300mA
IS22I
0117 0317
6537 fet
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Untitled
Abstract: No abstract text available
Text: HSXAWAVE HW900-2A Hexawave, Inc. 900MHz UHF GaAs FET Power Module Features Applicable for ETACS Cellular Phone Frequency : 872 ~ 905 MHz High Efficiency 50 ohm Input/Output Impedances Guaranteed Stability & Ruggedness Maximum Ratings Tc=25 c Parameters
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HW900-2A
900MHz
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pt 2358
Abstract: 159330 17089
Text: HWF1681NC HEXAWAVE High Power GaAs FET September 1998 Features • H igh O u tp ut Pow er • H igh G ain • H igh Efficiency • H igh L inearity • Class A o r Class AB O peration Outline Drawing PidB=34.5dBm typ. @2.4GHz Gl= 12dB(typ.)@2.4GHz r|a d d
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HWF1681NC
48dBm
HWF1681NC
pt 2358
159330
17089
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PDF
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hwf1682ra
Abstract: No abstract text available
Text: HWF16S2RA HEXAWAVE High Power GaAs FET September 1998 Rev.B Features • H ig h O u tp u t P o w e r O U T L I N E D R A W IN G P id B = 3 7 d B m ty p . @ 2 .4 G H z • H ig h G a in • H ig h E fficien cy • H ig h L in e a r ity G l=1 1.5dB(typ.)@2.4GHz
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HWF16S2RA
48dBm
F1682R
hwf1682ra
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Hexawave
Abstract: No abstract text available
Text: HEXAWAVE HW900-1A Hexawave, Inc. 900MHz UHF GaAs FET Power Module Features • Applicable for AMPS Cellular Phone • Frequency : 824 ~ 849 MHz • High Efficiency • 50 ohm Input/Output Impedances • Guaranteed Stability & Ruggedness Maximum Ratings Tc=25 c
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HW900-1A
900MHz
Hexawave
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PDF
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6681 - 250
Abstract: 2686 0112
Text: HEXAWAVE HWL27NPB Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.
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HWL27NPB
HWL27NPB
200mA
6681 - 250
2686 0112
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Untitled
Abstract: No abstract text available
Text: HSXAWAVS HWP1840-1C Hexawave, Inc. Power Module Preliminary Features 3/1/97 Rev.1 Outline Drawing F req u en cy : 1.805 ~ 1.870 G H z H ig h L inearity 1.181 27.00 (1 .OK!) (0.059) 1.50 (Ó.059) 50 o h m In p u t/ O u tp u t Im pedances jO k O 35 « niflaximum Ratings
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HWP1840-1C
-30nit
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TH 20669
Abstract: TA 8644
Text: HWF1681YC HEXAWAVE High Power GaAs FET September 1998 Rev. B Features Outline Drawing High Output Power P I <ib = 3 4 . 5dB m typ. @ 2.4G H z High Gain Unit : £ G l = 15dB (typ.)@ 2.4G H z Thickness: 53 \ High Efficiency A ll B ond Pads: gn 5 1 0 0 x 100
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HWF1681YC
Dissipatio175
TH 20669
TA 8644
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max 9694 e
Abstract: No abstract text available
Text: HBXAWAVE HWC30YUB < 3 ^ Hexawave, Inc. C-Band Medium Power GaAs FET Description Outline Dimensions The HWC30YUB is a Medium Power GaAs FET employing Hexawave's unique fabrication process. It provides high breakdown voltage and excellent linearity. y* 1 Features
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HWC30YUB
HWC30YUB
31dBm,
350mA
max 9694 e
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PDF
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177307
Abstract: 70-907
Text: M *. HEXAWAVS HWL27YRA Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. 1,625 0 .065 Features
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HWL27YRA
HWL27YRA
460mA
177307
70-907
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PDF
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Untitled
Abstract: No abstract text available
Text: HEXAWAVE HW3238 Hexawave, Inc. Power Module Features Outline Drawing • Frequency . 3 .4 ~ 3.8 GHz • High Linearity • 50 ohm Input/ O utput Impedances Maximum Ratings Parameters Tc=25 c Symbol Value Unit DC Supply Voltage V dd 8 V DC Supply Voltage
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HW3238
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ms 7616
Abstract: 91564
Text: J R , HEXAWAVS HWL34YRF Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Features Low Cost G aA s P ow er F E T
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HWL34YRF
HWL34YRF
12W60
ms 7616
91564
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Untitled
Abstract: No abstract text available
Text: HEXAWAVE HWS2602 GaAs MMIC SPDT Switch Hexawave, Inc. Advanced Description 8/27/97 Rev. 2-1 Full Functional Block Diagram and Pin Connections The Hexawave HWS2602 is an integrated GaAs SPDT Switch designed for transceivers operating in 1MHz to 1000 MHz frequency range.
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HWS2602
HWS2602
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80247
Abstract: No abstract text available
Text: HEXAWAVS HWL32NPA Hexawave, Inc. L-Band Power GaAs F ET Outline Dimensions Description The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz MHz cellular/wireless applications.
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HWL32NPA
HWL32NPA
80247
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PDF
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