HY62VF08401 Search Results

HY62VF08401 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HY62VF08401C		Hynix Semiconductor	Super Low Power Slow SRAM - 4Mb		Original	PDF
HY62VF08401C-DS		Hynix Semiconductor	256K x 16-Bit full CMOS SRAM		Original	PDF
HY62VF08401C-I		Hynix Semiconductor	256K x 16-Bit full CMOS SRAM		Original	PDF
HY62VF08401C Series		Hynix Semiconductor	Super Low Power Slow SRAM - 4Mb		Original	PDF
HY62VF08401C-SS		Hynix Semiconductor	256K x 16-Bit full CMOS SRAM		Original	PDF

HY62VF08401 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HY62VF08401C Series 256Kx16bit full CMOS SRAM Document Title 512K x 8bit 3.0 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.18.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values	Original	HY62VF08401C 256Kx16bit HY62UF08401C	PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000	PDF
TC55VEM416AXBN Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN	PDF
256Kx16bit Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16 Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V	OCR Scan	GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16	PDF
08401C Abstract: No abstract text available Text: H Y 6 2 V F 0 8 4 0 1 C S eries 512K x8bit full CMOS SRAM DESCRIPTION FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V min data retention Standard pin configuration -. 32 - sTSOP - 8X13.4(Standard)	OCR Scan	HY62VF08401C HY62VF08401 32pin HY62UF08401C 08401C	PDF
FBGA 9 x 20 Abstract: HY62CT08081E hynix hy T0808 Text: Ordering Information Old Part No. System HY XX X XX X X X X X XX XX HYUNDAI HY XXX I TEMPERATURE BLANK : 0°C ~ 70°C E : -25°C - 85-C I : -40°C ~ 85°C : Memory Product PRODUCT GROUP 62 63 67 : Slow SRAM : Fast SRAM : Sync SRAM SPEED 80 10 12 15 17 20 25	OCR Scan	100ns 120ns 150ns 128KX 512Kx 256Kx HY62UF16101C HY62QF16101C HY62SF16101C HY62UF16201A FBGA 9 x 20 HY62CT08081E hynix hy T0808	PDF