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IRG7PH35U Price and Stock

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Infineon Technologies AG IRG7PH35U-EP IGBT TRENCH 1200V 55A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35U-EP	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC IRG7PH35U-EP IRG7PH35 - DISCRETE IGBT WITHOUT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35U-EP	Bulk			100	1 - 10 - 100 $3.03 1000 $3.03 10000 $3.03	Buy Now
Infineon Technologies AG IRG7PH35UPBF IGBT 1200V 55A 210W TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35UPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC IRG7PH35UPBF IGBT W/ULTRAFAST SOFT RECOVERY D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35UPBF	Bulk			123	1 - 10 - 100 - 1000 $2.45 10000 $2.45	Buy Now
Infineon Technologies AG IRG7PH35UD-EP IGBT 1200V 50A COPAK247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRG7PH35UD-EP	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	IRG7PH35UD-EP		350		69	1 - 10 - 100 $5.225 1000 $4.725 10000 $4.725	Buy Now
Rochester Electronics	IRG7PH35UD-EP		416		1	1 $4.45 10 $4.45 100 $4.18 1000 $3.78 10000 $3.78	Buy Now
TME	IRG7PH35UD-EP				1	1 $6.97 10 $5.54 100 $4.98 1000 $4.98 10000 $4.98	Get Quote

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IRG7PH35U Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRG7PH35UD1-EP		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247		Original	PDF
IRG7PH35UD1MPBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247AD		Original	PDF
IRG7PH35UD1PBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247		Original	PDF
IRG7PH35UD-EP		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A COPAK247		Original	PDF
IRG7PH35UDPBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 180W TO247AC		Original	PDF
IRG7PH35U-EP		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 55A TO247		Original	PDF
IRG7PH35UPBF		International Rectifier	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 55A 210W TO247AC		Original	PDF

IRG7PH35U Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRG7PH35UD1MPBF Abstract: No abstract text available Text: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode	Original	PDF	IRG7PH35UD1MPbF 1300Vpk O-247AD TD-020Dâ IRG7PH35UD1MPBF
irg7ph35upbf Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
irg7ph35 Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1 Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses	Original	PDF	7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD irg7ph35 irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
Untitled Abstract: No abstract text available Text: IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA	Original	PDF	IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk JESD47F) O-247AC O-247AD
Untitled Abstract: No abstract text available Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode	Original	PDF	IRG7PH35UD1M 1300Vpk
transistor A6A Abstract: 76T marking transistor A6A N Text: PD - 97794 IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode	Original	PDF	IRG7PH35UD1M 1300Vpk O-247AC transistor A6A 76T marking transistor A6A N
IRG7PH35UD1PbF Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v Text: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA	Original	PDF	IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD IRG7PH35UD1PbF IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
irg7ph35u Abstract: irg7ph35 ir igbt 1200V 40A 600v 20a IGBT Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode	Original	PDF	IRG7PH35UD1M 1300Vpk TD-020D irg7ph35u irg7ph35 ir igbt 1200V 40A 600v 20a IGBT
Untitled Abstract: No abstract text available Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	IRG7PH35UPbF IRG7PH35U-EP O-247AD
Untitled Abstract: No abstract text available Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses	Original	PDF	7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
irg7ph35udpbf Abstract: irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD irg7ph35udpbf irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD
irg7ph35 Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD Text: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching	Original	PDF	IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD
Untitled Abstract: No abstract text available Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	PDF	PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD