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    IRG7PH35UD Search Results

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    IRG7PH35UD Price and Stock

    Infineon Technologies AG IRG7PH35UD-EP

    IGBT 1200V 50A COPAK247
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    DigiKey IRG7PH35UD-EP Tube
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    Verical IRG7PH35UD-EP 350 69
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    • 100 $5.225
    • 1000 $4.725
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    Rochester Electronics IRG7PH35UD-EP 416 1
    • 1 $4.45
    • 10 $4.45
    • 100 $4.18
    • 1000 $3.78
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    TME IRG7PH35UD-EP 1
    • 1 $6.97
    • 10 $5.54
    • 100 $4.98
    • 1000 $4.98
    • 10000 $4.98
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    Rochester Electronics LLC IRG7PH35UD-EP

    IGBT TRENCH 1200V 50A TO247AD
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    DigiKey IRG7PH35UD-EP Bulk 65
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    IRG7PH35UD-EP Bulk 65
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    Infineon Technologies AG IRG7PH35UDPBF

    IGBT TRENCH 1200V 50A TO247AC
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    Verical IRG7PH35UDPBF 824 70
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    • 1000 $4.675
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    Rochester Electronics IRG7PH35UDPBF 829 1
    • 1 $4.4
    • 10 $4.4
    • 100 $4.14
    • 1000 $3.74
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    Rochester Electronics LLC IRG7PH35UD1-EP

    IGBT W/ULTRA-LOW VF DIODE FOR IN
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    Infineon Technologies AG IRG7PH35UD1-EP

    IGBT 1200V 50A 179W TO247
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    IRG7PH35UD Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG7PH35UD1-EP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247 Original PDF
    IRG7PH35UD1MPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247AD Original PDF
    IRG7PH35UD1PBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 179W TO247 Original PDF
    IRG7PH35UD-EP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A COPAK247 Original PDF
    IRG7PH35UDPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 180W TO247AC Original PDF

    IRG7PH35UD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG7PH35UD1MPBF

    Abstract: No abstract text available
    Text: IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original
    PDF IRG7PH35UD1MPbF 1300Vpk O-247AD TD-020Dâ IRG7PH35UD1MPBF

    irg7ph35

    Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
    Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses


    Original
    PDF 7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD irg7ph35 irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA


    Original
    PDF IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk JESD47F) O-247AC O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original
    PDF IRG7PH35UD1M 1300Vpk

    transistor A6A

    Abstract: 76T marking transistor A6A N
    Text: PD - 97794 IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original
    PDF IRG7PH35UD1M 1300Vpk O-247AC transistor A6A 76T marking transistor A6A N

    IRG7PH35UD1PbF

    Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
    Text: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA


    Original
    PDF IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD IRG7PH35UD1PbF IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v

    irg7ph35u

    Abstract: irg7ph35 ir igbt 1200V 40A 600v 20a IGBT
    Text: IRG7PH35UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode


    Original
    PDF IRG7PH35UD1M 1300Vpk TD-020D irg7ph35u irg7ph35 ir igbt 1200V 40A 600v 20a IGBT

    Untitled

    Abstract: No abstract text available
    Text: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT Technology Low Switching Losses


    Original
    PDF 7455A IRG7PH35UD1PbF IRG7PH35UD1-EP 1300Vpk O-247AD

    irg7ph35upbf

    Abstract: IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A
    Text: PD - 97479 IRG7PH35UPbF IRG7PH35U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient


    Original
    PDF IRG7PH35UPbF IRG7PH35U-EP O-247AD irg7ph35upbf IRG7PH35U-EP IRG7PH35U 035H C-150 IRFPE30 IRGP30B120KD-E ir igbt 1200V 40A

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original
    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    irg7ph35udpbf

    Abstract: irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD
    Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original
    PDF PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD irg7ph35udpbf irg7ph35 400v 20A ultra fast recovery diode 600v 20a IGBT 600v 20a IGBT driver ir igbt 1200V 40A P channel 600v 20a IGBT ultrafast n channel 600v 20a IGBT C-150 IRG7PH35UD

    irg7ph35

    Abstract: IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD
    Text: PD - 97463 IRG7CH35UB Features • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution G E n-channel Benefits Applications • High Efficiency due to Low VCE(on) and Low Switching


    Original
    PDF IRG7CH35UB irg7ph35 IRG7PH35UD1PBF IRG7CH35UB IC A 3120 MIL-HDBK-263 IRG7PH35UD1-EP irg7ch35u IRG7PH35UD1 IRG7CH IRG7PH35UD

    Untitled

    Abstract: No abstract text available
    Text: PD-96288 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original
    PDF PD-96288 IRG7PH35UDPbF IRG7PH35UD-EP O-247AD

    Untitled

    Abstract: No abstract text available
    Text: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient


    Original
    PDF IRG7PG35UPbF IRG7PG35U-EPbF O-247AC O-247AD IRG7PG35UPbF/IRG7PG35U-EPbF