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Littelfuse Inc IXFN82N60P MOSFET N-CH 600V 72A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN82N60P	Tube	358		1	1 $35.98 10 $27.642 100 $35.98 1000 $35.98 10000 $35.98	Buy Now
RS	IXFN82N60P	Bulk		8 Weeks	10	1 - 10 $41.8 100 $41.8 1000 $41.8 10000 $41.8	Get Quote
IXYS Corporation IXFN82N60P MOSFET Modules DIODE Id82 BVdass600
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN82N60P		150			1 $35.98 10 $27.64 100 $27.02 1000 $27.02 10000 $27.02	Buy Now
Newark	IXFN82N60P	Bulk			1	1 $54.33 10 $51.46 100 $47.14 1000 $47.14 10000 $47.14	Buy Now
Future Electronics	IXFN82N60P	Tube		46 Weeks	300	1 - 10 $27.26 100 $26.71 1000 $26.5 10000 $26.5	Buy Now
	IXFN82N60P	Tube		46 Weeks	10	1 - 10 $30.12 100 $29.68 1000 $29.3 10000 $29.3	Buy Now
TTI	IXFN82N60P	Tube			300	1 - 10 - 100 - 1000 $27.02 10000 $27.02	Buy Now
TME	IXFN82N60P				1	1 $41.74 10 $33.12 100 $33.12 1000 $33.12 10000 $33.12	Get Quote
IXYS Integrated Circuits Division IXFN82N60P MOSFET MOD.72A 600V N-CH SOT227B HIPERFET CHASSIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFN82N60P					1 $50.23554 10 $46.9491 100 $46.9491 1000 $46.9491 10000 $46.9491	Get Quote

IXFN82N60P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFN82N60P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 600V 72A SOT-227B		Original	PDF

IXFN82N60P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFN82N60P Abstract: IXFN82N60 *2n60P IXFN 82N60P SOT227B package 82N60 Text: IXFN82N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous	Original	PDF	IXFN82N60P 82N60P 7-17-12-A IXFN82N60P IXFN82N60 *2n60P IXFN 82N60P SOT227B package 82N60
Ixfn82n60p Abstract: No abstract text available Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN82N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous	Original	PDF	IXFN82N60P 200ns E153432 82N60P 7-17-12-A Ixfn82n60p
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
IXFB100N50P Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P Text: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the	Original	PDF	PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250