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IXGH48N60B3 Price and Stock

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IXYS Corporation IXGH48N60B3 IGBT 600V 300W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH48N60B3	Tube			30	1 - 10 - 100 $3.20967 1000 $3.20967 10000 $3.20967	Buy Now
Bristol Electronics	IXGH48N60B3		56			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IXGH48N60B3		44			1 $13.0338 10 $11.5856 100 $10.7167 1000 $10.7167 10000 $10.7167	Buy Now
IXYS Corporation IXGH48N60B3D1 IGBT 600V 300W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH48N60B3D1	Tube			300	1 - 10 - 100 - 1000 $3.87127 10000 $3.87127	Buy Now
Mouser Electronics	IXGH48N60B3D1		433			1 $7.32 10 $6.48 100 $5.15 1000 $3.87 10000 $3.87	Buy Now
TTI	IXGH48N60B3D1	Tube	360		30	1 - 10 - 100 $4.28 1000 $4.28 10000 $4.28	Buy Now
TME	IXGH48N60B3D1		339		1	1 $7.08 10 $7.08 100 $5.44 1000 $5.44 10000 $5.44	Buy Now
IXYS Corporation IXGH48N60B3C1 IGBT 600V 75A 300W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH48N60B3C1	Tube			30	1 - 10 - 100 $17.96267 1000 $17.96267 10000 $17.96267	Buy Now
TME	IXGH48N60B3C1		29		1	1 $19.31 10 $19.31 100 $19.31 1000 $19.31 10000 $19.31	Buy Now
Littelfuse Inc IXGH48N60B3D1 Transistor, Igbt, 600V, 48A, To-247; Continuous Collector Current:48A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:300W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes \|Littelfuse IXGH48N60B3D1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXGH48N60B3D1	Bulk	656		1	1 $4.75 10 $4.75 100 $4.75 1000 $4.6 10000 $3.88	Buy Now
IXYS Integrated Circuits Division IXGH48N60B3 IGBT DIS.SINGLE 48A 600V GENX3 TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGH48N60B3					1 $4.19298 10 $4.19298 100 $3.8118 1000 $3.8118 10000 $3.8118	Get Quote

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IXGH48N60B3 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGH48N60B3	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 300W TO247AD	Original	PDF
IXGH48N60B3C1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 75A 300W TO247	Original	PDF
IXGH48N60B3D1	IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 300W TO247	Original	PDF

IXGH48N60B3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGH48N60 Abstract: IXGH48N60B3 IXGA48N60B3 48n60 IXGP48N60 IXGP48N60B3 Text: GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE sat ≤ 1.8V TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 IC110 O-263 O-220 O-247 48N60B3D1 5-05-08-A IXGH48N60 IXGH48N60B3 IXGA48N60B3 48n60 IXGP48N60 IXGP48N60B3	PDF
Untitled Abstract: No abstract text available Text: GenX3TM 600V IGBT IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 IC110 O-263 O-220 O-247 48N60B3D1 5-05-08-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	IC110 IXGH48N60B3C1 116ns O-247 IF110 48N60B3C1	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.8V IXGH48N60B3D1 Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR	Original	IC110 IXGH48N60B3D1 O-247 ID110 48N60B3D1 5-05-08-A	PDF
IXGH48N60B3C1 Abstract: IF110 48n60 DS100140A IXGH48N60 Text: Preliminary Technical Information IXGH48N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	IXGH48N60B3C1 IC110 116ns O-247 IF110 48N60B3C1 IXGH48N60B3C1 IF110 48n60 DS100140A IXGH48N60	PDF
IXGH48N60B3D1 Abstract: IXGH48N60 48N60 Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH48N60B3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR	Original	IXGH48N60B3D1 IC110 O-247 ID110 48N60B3D1 5-05-08-A IXGH48N60B3D1 IXGH48N60 48N60	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
600v 30a IGBT Abstract: igbt 600V 30A datasheet 600v 600v 30a IXGR60N60C3C1 igbt 600V IXGH30N60C3C1 30A, 600v DIODE igbt to247 silicon carbide Text: The Best just got Better IXYS 600V GenX3SC - Achieving New Levels of Efficiency TM Part Number Vces Ic100 tc=25oC Vce sat tj=25oC tfi (typ) tj=25oC Eoff typ tj=125oC Rthjc max Package Type IXGR60N60C3C1 600V 30A 2.5V 50ns 0.80mJ 0.73oC/W ISOPLUS247TM IXGA30N60C3C1	Original	Ic100 125oC IXGR60N60C3C1 73oC/W ISOPLUS247TM IXGA30N60C3C1 56oC/W O-263 IXGP30N60C3C1 600v 30a IGBT igbt 600V 30A datasheet 600v 600v 30a IXGR60N60C3C1 igbt 600V IXGH30N60C3C1 30A, 600v DIODE igbt to247 silicon carbide	PDF
Inverter Welder Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM	Original	PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter	PDF
solar inverter circuit Abstract: 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A SOLAR INVERTER Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F IXYS expands its 600V genx3TM IGBT family with silicon carbide anti-parallel diode july 2009 OVERVIEW The recent emergence and commercialization of Silicon Carbide SiC Technology in the power semiconductor industry has brought to light significant performance advances in	Original	E153432) com/IXAN0022 pb60IGBTSC solar inverter circuit 600V igbt dc to dc boost converter full bridge inverter Solar Charge Controller smps Solar Charge Controller PWM 30A IGBT gate drive for a boost converter Solar Charge Controller Circuit PWM smps solar charge controller SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A SOLAR INVERTER	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF

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IXYS Integrated Circuits Division IXGH48N60B3

IXGH48N60B3 Datasheets (3)

IXGH48N60B3 Datasheets Context Search

IXGH48N60

Untitled

Untitled

Untitled

IXGH48N60B3C1

IXGH48N60B3D1

IXTD08N100P-1A

schematic diagram atx Power supply 500w

600v 30a IGBT

Inverter Welder

solar inverter circuit

IXGP70N33