Datasheet Archive: IXSK30N60BD1 datasheets

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IXYS Corporation IXSK30N60BD1 IGBT 600V 55A 200W TO264
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IXSK30N60BD1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXSK30N60BD1		IXYS	600V high speed IGBT with diode		Original	PDF

IXSK30N60BD1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
40n60 igbt Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60 Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263	Original	O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60	PDF
TO-264 Jedec package outline Abstract: No abstract text available Text: nixYS ADVANCEDTECHNICAL INFORMATION High Speed IGBT with Diode IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 V CES 600 V 55 A ^C25 V CE sat tfi Short Circuit SOA Capability 2.0 V 140 ns TO-247AD (IXSH) Symbol Test Conditions vCES T j =25°C to150°C VcOR T j = 25° C to 150° C; RGE=	OCR Scan	IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 O-247AD to150 O-264 O-268 TO-264 Jedec package outline	PDF
diode u2 40 Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60 Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style ► N eiV ISOPLUS247™ (R) Case style	OCR Scan	O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60	PDF

Catalog Datasheet

MFG & Type

Document Tags

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40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

Original

O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

PDF

TO-264 Jedec package outline

Abstract: No abstract text available
Text: nixYS ADVANCEDTECHNICAL INFORMATION High Speed IGBT with Diode IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 V CES 600 V 55 A ^C25 V CE sat tfi Short Circuit SOA Capability 2.0 V 140 ns TO-247AD (IXSH) Symbol Test Conditions vCES T j =25°C to150°C VcOR T j = 25° C to 150° C; RGE=

OCR Scan

IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 O-247AD to150 O-264 O-268 TO-264 Jedec package outline

PDF

diode u2 40

Abstract: 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60
Text: Discrete IGBT with Fast Diode u^aHighs IGBT/Diode Combi-Pack S series with SCSOA capability tQBTs=su^ *q25 Vcss min V A V CE SAT) max V TO-247(H) V TO-268AA (T) TO-264 (K) SOT-227B (N> typ ns PLUS247 (X) Case style * ► N eiV ISOPLUS247™ (R) Case style

OCR Scan

O-264 O-247 O-268AA OT-227B PLUS247TM ISOPLUS247TM IXSH24N60BD1 IXSH30N60U1 IXSN62N60U1 IXSN35N100U1* diode u2 40 48 H diode DIODE U2 70 IXSH24N60AU1 IXSN35N120AU1 IXSN35N100U1 IXSX35N120AU1 h 48 diode diode u2 34 ixsn80n60

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