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    J212 Search Results

    J212 Result Highlights (4)

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    2SJ212-AZ Renesas Electronics Corporation Pch Mosfet For Switching, POMM, /Magazine Visit Renesas Electronics Corporation
    2SJ212-T1-AZ Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
    2SJ212-T2-AZ Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
    2SJ212(0)-T1-AZ Renesas Electronics Corporation Pch Mosfet For Switching Visit Renesas Electronics Corporation
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    J212 Price and Stock

    TAIYO YUDEN FBMJ2125HS420-T

    FERRITE BEAD 42 OHM 0805 1LN
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    Mouser Electronics FBMJ2125HS420-T 183,354
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    TAIYO YUDEN EMJ212CB7225MGHT

    CAP CER 2.2UF 16V X7R 0805
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    DigiKey EMJ212CB7225MGHT Digi-Reel 3,820 1
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    TAIYO YUDEN TMJ212CB7225KGHT

    CAP CER 2.2UF 25V X7R 0805
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    DigiKey TMJ212CB7225KGHT Cut Tape 2,263 1
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    TAIYO YUDEN FBMJ2125HM330-TV

    FERRITE BEAD 33 OHM 0805 1LN
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    DigiKey FBMJ2125HM330-TV Cut Tape 769 1
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    Avnet Americas FBMJ2125HM330-TV Reel 24,000 7 Weeks 4,000
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    2J USA 2J2124B-B07H

    BAYONET 4GLTE/3G/2G WIDEBAND WAL
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    DigiKey 2J2124B-B07H Bag 10 1
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    J212 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J212 Calogic N-Channel JFET Original PDF
    J212 Fairchild Semiconductor N-Channel RF Amplifier Original PDF
    J212 InterFET N-Channel silicon junction field-effect transistor Original PDF
    J212 Linear Integrated Systems LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Original PDF
    J212 Philips Semiconductors N-channel field-effect transistors Original PDF
    J212 Vishay TRANS JFET N-CH 3TO-226AA Original PDF
    J212 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    J212 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    J212 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    J212 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    J212 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    J212 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    J212 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    J212 National Semiconductor N-Channel JFETs Scan PDF
    J212 National Semiconductor N-Channel JFETs Scan PDF
    J212 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    J212 Siliconix PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS Scan PDF
    J212 Siliconix FET Design Catalogue 1979 Scan PDF
    J212 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    J212-18 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    J212 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j210

    Abstract: J210 J211 J212 marking J212
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212


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    PDF SCA56 117067/00/01/pp12 transistor j210 J210 J211 J212 marking J212

    2N5911

    Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 J212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/J212 –4 to –6 –25


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    PDF J/SSTJ210 SSTJ211 SSTJ212 J/SSTJ211 J/SSTJ212 J211/212, 18-Jul-08 2N5911 SSTJ212 transistor j210 J210 J211 J212 SSTJ211

    Untitled

    Abstract: No abstract text available
    Text: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted


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    PDF OT-23 100pA 360mW

    "Z2" marking

    Abstract: No abstract text available
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 J212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/J212 –4 to –6 –25


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    PDF J/SSTJ210 J/SSTJ211 J/SSTJ212 SSTJ211 SSTJ212 J211/212, 08-Apr-05 "Z2" marking

    Untitled

    Abstract: No abstract text available
    Text: J210, J211, J212 SSTJ210, SSTJ211, J212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS


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    PDF SSTJ210, SSTJ211, SSTJ212 100pA OT-23 360mW SSTJ210

    low igss

    Abstract: J212 J211 J210 transistor j210 J210 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


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    PDF 100pA 360mW low igss J212 J211 J210 transistor j210 J210 equivalent

    212 s sot-23

    Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
    Text: J211 / J212 / MMBFJ211 / J212 MMBFJ211 J212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient


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    PDF MMBFJ211 MMBFJ212 MMBFJ211 OT-23 212 s sot-23 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211

    J211

    Abstract: 62w sot-23 N-Channel RF Amplifier J212 rf amplifier
    Text: J211 / J212 / MMBFJ211 / J212 MMBFJ211 J212 J211 J212 G G S S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient


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    PDF MMBFJ211 MMBFJ212 OT-23 J211 62w sot-23 N-Channel RF Amplifier J212 rf amplifier

    SSTJ210

    Abstract: J210
    Text: N-Channel JFET LLC J210 – J212 / SSTJ210 J212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,


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    PDF SSTJ210 SSTJ212 J210-11 SSTJ210-11 OT-23 -55oC 135oC PI10V, SSTJ210 J210

    J210

    Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
    Text: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 J212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,


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    PDF SSTJ210 SSTJ212 J210-11 SSTJ210-11 OT-23 -55oC 135oC J210 SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent

    J212

    Abstract: SMPJ212 1NA15
    Text: Databook.fxp 1/13/99 2:09 PM Page B-57 B-57 01/99 J212 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier ¥ General Purpose Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF NJ26L 226AA SMPJ212 J212 SMPJ212 1NA15

    transistor j210

    Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
    Text: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.


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    PDF J210/211/212 AN104, J211/212, P-37404--Rev. 04-Jul-94 transistor j210 J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212

    ultra low igss pA mosfet

    Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
    Text: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL


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    PDF 100pA 360mW ultra low igss pA mosfet ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent

    Untitled

    Abstract: No abstract text available
    Text: J210, J211, J212 / SSTJ210, SSTJ211, J212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS


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    PDF SSTJ210, SSTJ211, SSTJ212 100pA 360mW OT-23 SSTJ210

    Untitled

    Abstract: No abstract text available
    Text: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF


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    PDF LSJ212 100pA 360mW

    2N5911-12

    Abstract: 2N5912CHP J210 J211 J212 U257 U312 U312CHP J211 jfet siliconix Siliconix Dual N-Channel JFETs
    Text: n-channel JFETs designed f o r . k> H Siliconix Performance Curves NZF See Section 5 • G e n e r a l P u rp ose A m p lifie rs o < - K> BEN EFITS • High Gain G ps = 7000 /¿mho Minimum J211, J212 High Input Impedance IQSS = 100 pA Maximum Cjss = 5 pF Typical


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    SST5484

    Abstract: No abstract text available
    Text: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0


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    PDF T0220 T0237 T0220AA PN4117A PN4118A PN4119A 2N4416A 2N4117A 2N4118A 2N4119A SST5484

    6146w

    Abstract: 6159W 6159 TUBE tube 6159 7357 "Power Tube" 6159
    Text: 6159W/7357 Beam Power Tube HIGH POWER S E N S IT IV IT Y 90 WATTS CW INPUT IC A S UP TO 60 Me 60 WATTS CW INPUT ( I CAS) AT 175 Me F o r Use Under S e v e r e Shock and V i b r a t i o n The 6 i 5 9 W i l 3 5 1 is follow ing items: the same as the 6146W/J212 excep t


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    PDF 159W/7357 146W/7222 6146w 6159W 6159 TUBE tube 6159 7357 "Power Tube" 6159

    SS211

    Abstract: ss 211
    Text: N-Channel JFET caioqic CORPORATION J210 -J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.


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    PDF -J212/SST210 SST212 J210-11 SST210-11 OT-23 J210-J212/SST21 300ms, SS211 ss 211

    J212

    Abstract: No abstract text available
    Text: J2 1 0 .J2 1 1 .J2 1 2 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN gfe = 7000|imho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|##= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS


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    PDF 100pA 360mW S-16V Vos-15V J212

    Untitled

    Abstract: No abstract text available
    Text: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 J212 J212 PRODUCT SUM M ARY Part Number VGS off (V) V (BH)GSS M in (V) 9 fs Min (mS) loss Ml*1 (mA) J2 1 0 - 1 to - 3 -2 5 4 J/S S T J211 - 2 .5 t o -4 .5 -2 5 6 7 -2 5 7 15 J /S S T J 2 1 2


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    PDF J/SSTJ210 SSTJ211 SSTJ212 J211/212, S-04028--Rev. 04-Jun-01 S-04028--

    Untitled

    Abstract: No abstract text available
    Text: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN = 7000^mho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|88= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS


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    PDF 100pA 360mW LISIS00075

    Untitled

    Abstract: No abstract text available
    Text: d o tfi1' caloqic CORPORATION N-ChannelJFET v J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.


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    PDF J212/SST210 SST212 J210-11 SST210-11 OT-23 1B443SB 300ms, 1A44322

    JFs sot-23

    Abstract: J212 J212 we J211 MMBFJ211 MMBFJ212 T092
    Text: J211 / J212 / MMBFJ211 /J212 Discrete POW ER & Signal Technologies National Semiconductor" MMBFJ211 J212 J211 J212 SOT-23 Mark: 62 W /6 2X N-Channel General Purpose Amplifier This device is designed for VHF/UHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise,


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    PDF MMBFJ211 MMBFJ212 OT-23 2W/62X JFs sot-23 J212 J212 we J211 MMBFJ212 T092