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    K12A60 Search Results

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    K12A60 Price and Stock

    Toshiba America Electronic Components TK12A60D(STA4,Q,M)

    MOSFET N-CH 600V 12A TO220SIS
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    DigiKey TK12A60D(STA4,Q,M) Tube 88 1
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    Newark TK12A60D(STA4,Q,M) Bulk 2,411 1
    • 1 $1.32
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    Mouser Electronics TK12A60D(STA4,Q,M) 119
    • 1 $3.26
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    EBV Elektronik TK12A60D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK12A60U(Q,M)

    MOSFET N-CH 600V 12A TO220SIS
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    DigiKey TK12A60U(Q,M) Tube
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    Toshiba America Electronic Components TK12A60D(STA4QM)

    Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS - Bulk (Alt: 72AK4438)
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    Avnet Americas TK12A60D(STA4QM) Bulk 16 Weeks, 3 Days 1
    • 1 $3.03
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    TK12A60D(STA4QM) Tube 32 Weeks 50
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    Toshiba America Electronic Components TK12A60WS4VX

    Trans MOSFET N 600V 11.5A 3-Pin TO-220SIS Tube - Rail/Tube (Alt: TK12A60W,S4VX)
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    Avnet Americas TK12A60WS4VX Tube 32 Weeks 50
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    Toshiba America Electronic Components TK12A60W,S4VX(M

    Mosfet, N-Ch, 600V, 11.5A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK12A60W,S4VX(M
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    Newark TK12A60W,S4VX(M Bulk 767 1
    • 1 $1.22
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    Chip1Stop TK12A60W,S4VX(M Tube 19
    • 1 $2.39
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    EBV Elektronik TK12A60W,S4VX(M 23 Weeks 50
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    K12A60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K12A60U

    Abstract: TK12A60U k12a60 code MCV marking MCV
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV PDF

    K12A60U

    Abstract: K12A k12a60
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U K12A60U K12A k12a60 PDF

    K12A60D

    Abstract: TK12A60D
    Text: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D PDF

    K12A60U

    Abstract: k12a60 TK12A60U VDS208
    Text: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U SC-67 2-10U1B 20070701-JA K12A60U k12a60 TK12A60U VDS208 PDF

    k12a60

    Abstract: k12a60d
    Text: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60 k12a60d PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A
    Text: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    K12A60D

    Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data
    Text: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data PDF

    K12A60D

    Abstract: TK12A60D k12a60
    Text: K12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)


    Original     		TK12A60D K12A60D TK12A60D k12a60 PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 K12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original     		TK12A60U PDF

    k12a60

    Abstract: K12A60U TK12A60U transistor K12A
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U transistor K12A PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U PDF

    k12a60d

    Abstract: No abstract text available
    Text: K12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK12A60D k12a60d PDF

    k12a60

    Abstract: K12A60U TK12A60U k12a6 K12A
    Text: K12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)


    Original     		TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A PDF