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    K9F4G08 Price and Stock

    Samsung Semiconductor K9F4G08U0E-SIB0000

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    Samsung Semiconductor K9F4G08U0F-SIB0

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    Samsung Semiconductor K9F4G08U0A-PI

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    Samsung Semiconductor K9F4G08U0D-SCB00

    512M X 8 FLASH 3.3V PROM, PDSO48 (Also Known As: K9F4G08U0D-SCB0)
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    K9F4G08 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9F4G08U0A Samsung Electronics Flash Memory Original PDF
    K9F4G08U0A-I Samsung Electronics FLASH MEMORY Original PDF
    K9F4G08U0A-P Samsung Electronics FLASH MEMORY Original PDF
    K9F4G08U0M Samsung Electronics 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Original PDF

    K9F4G08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K9F4G08U0M

    Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF K9K8G08U1M K9F4G08U0M K9F4G08U0M-Y K9F4G08U0M K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB

    K9F4G08U0B

    Abstract: K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0
    Text: Advance FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0

    K9F4G08U0M

    Abstract: two-plane program nand
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.


    Original     		PDF K9K8G08U1M K9F4G08U0M K9F4G08U0M two-plane program nand

    512M x 8 Bit NAND Flash Memory

    Abstract: samsung 2GB Nand flash samsung 8Gb nand flash K9F4G08U0M-PCB0 8bit nand flash K9F4G08U0M 52ULGA K9K8G08U1M K9XXG08UXM-XIB0 K9F4G08
    Text: K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K8G08U1M K9F4G08U0M K9XXG08UXM 512M x 8 Bit NAND Flash Memory samsung 2GB Nand flash samsung 8Gb nand flash K9F4G08U0M-PCB0 8bit nand flash K9F4G08U0M 52ULGA K9K8G08U1M K9XXG08UXM-XIB0 K9F4G08

    K9K8G08U0D

    Abstract: K9K8G08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08u0d K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010
    Text: Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010

    Untitled

    Abstract: No abstract text available
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.


    Original     		PDF K9K8G08U1M K9F4G08U0M

    K9F4G08U0A-PCB0

    Abstract: K9F4G08U0A K9F4G08U0A-P K9K8G08U1A K9K8G08U1A-I K9F4G08U0A-PCB uLGA K9F4G08U0A-I
    Text: Preliminary FLASH MEMORY K9K8G08U1A K9F4G08U0A K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K8G08U1A K9F4G08U0A K9XXG08UXA K9F4G08U0A-PCB0 K9F4G08U0A K9F4G08U0A-P K9K8G08U1A K9K8G08U1A-I K9F4G08U0A-PCB uLGA K9F4G08U0A-I

    K9XXG

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9K8G08U1M K9F4G08U0M K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K8G08U1M K9F4G08U0M K9XXG08UXM 9K8G08U1M K9XXG

    K9K8G08U0D

    Abstract: K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9K8G08U1D K9F4G08U0D K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB
    Text: Rev.1.0, Jun. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB

    K9F4G08U0A

    Abstract: K9F4G08U0A-PCB0
    Text: K9K8G08U1A K9F4G08U0A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K8G08U1A K9F4G08U0A K9XXG08UXA K9F4G08U0A K9F4G08U0A-PCB0

    LPC-H3131

    Abstract: olimex 1N5819 SS14 SCJ325P00XG0B02G LPC3131 VSSA12 ssi protocol K4S561632C-TC fb0805 ARM926EJ-S
    Text: LPC-H3131 development board Users Manual All boards produced by Olimex are ROHS compliant Rev. Initial, May 2010 Copyright c 2010, OLIMEX Ltd, All rights reserved Page1 INTRODUCTION LPC-H3131 board includes powerful LPC3131 180 MHz ARM microcontroller, with


    Original     		PDF LPC-H3131 LPC3131 32-bit ARM926EJ-S, 180Mhz, Page20 olimex 1N5819 SS14 SCJ325P00XG0B02G VSSA12 ssi protocol K4S561632C-TC fb0805 ARM926EJ-S

    Samsung Flash K9WAG08U1A

    Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
    Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A

    HY27UU088G5M

    Abstract: HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08
    Text: ST72681 USB 2.0 HIGH-SPEED FLASH DRIVE CONTROLLER • ■ ■ ■ ■ ■ ■ ■ USB 2.0 Interface compatible with Mass Storage Device Class – Integrated USB 2.0 PHY – Supports USB High Speed and Full Speed – Suspend and Resume operations Mass Storage Controller Interface MSCI


    Original     		PDF ST72681 512-byte 12MB/s ST72681/R12 ST72681 HY27UU088G5M HY27UT084G2M HY27UG084G2M HY27UH088G2M 9033 transistor hynix HY27UH088G2M K9F1G08U 29F4G08BA 29f8g08 29f4g08

    SAM9260

    Abstract: ARM926EJ-S AT91SAM9260 CR2032 ISO7816 CR2032 3.3V battery nand flash pcb layout "SMD jumper" AT91SAM9260 pwm ST3232 PACKAGE NAME
    Text: SAM9-L9260 development board Users Manual Rev.C, July 2009 Copyright c 2009, OLIMEX Ltd, All rights reserved INTRODUCTION: SAM9-L9260 is a low cost development platform with ARM9 microcontroller, 64MB SDRAM and 512MB NAND Flash. The board has Ethernet 100Mbit controller, USB host, USB device, RS232 and 40 pin


    Original     		PDF SAM9-L9260 512MB 100Mbit RS232 SAM9260 AT91SAM9260 200MHz 50MHz ARM926EJ-S CR2032 ISO7816 CR2032 3.3V battery nand flash pcb layout "SMD jumper" AT91SAM9260 pwm ST3232 PACKAGE NAME

    Untitled

    Abstract: No abstract text available
    Text: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■


    Original     		PDF ST72681 LQFP48

    K9LBG08U0M

    Abstract: K9LAG08u0m k9lbg08 S71WS256ND0 MX27 ROM bootstrap protocol SG29GL512N code warrior makefile IMX27ads K9LAG08 K9LBG
    Text: I.MX Platform PDK 1.4 Advanced Toolkit Standard Version Reference Manual Rev. 1.6 10/2008 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370


    Original     		PDF CH370 K9LBG08U0M K9LAG08u0m k9lbg08 S71WS256ND0 MX27 ROM bootstrap protocol SG29GL512N code warrior makefile IMX27ads K9LAG08 K9LBG

    RC1587NO

    Abstract: A01539 AT91SAM9260 SAM9-L9260 computer controled lock FB1206 K4S561632C-TC CR2032 3.0V CR2032 3.3V AT91-ISP
    Text: SAM9-L9260 development board Users Manual Rev. B, June 2008 Copyright c 2009, OLIMEX Ltd, All rights reserved INTRODUCTION: SAM9-L9260 is a low cost development platform with ARM9 microcontroller, 64MB SDRAM and 512MB NAND Flash. The board has Ethernet 100Mbit controller, USB host, USB device, RS232 and 40 pin


    Original     		PDF SAM9-L9260 512MB 100Mbit RS232 SAM9260 AT91SAM9260 200MHz 50MHz RC1587NO A01539 computer controled lock FB1206 K4S561632C-TC CR2032 3.0V CR2032 3.3V AT91-ISP

    K9K8G08U0A-PCB0

    Abstract: K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A
    Text: Preliminary FLASH MEMORY K9WAG08U1A K9K8G08U0A K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1A K9K8G08U0A K9XXG08UXA K9K8G08U0A-PCB0 K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A

    K9K8G08U0M

    Abstract: K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip
    Text: K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1M K9K8G08U0M K9NBG08U5M K9XXG08UXM K9WAG08U0M samsung 8Gb nand flash 16gb K9NBG08U5M-PCB0 K9NBG08U5M samsung 16GB Nand flash K9WAG08U1M-PCB0 serial flash memory 8gb 16gb chip

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    MT29F4G08AB

    Abstract: MT29F4G08ABC MT29F4G08 IMX27ads xldr i.mx27 K9F1G08 K9F1G08U0A K9F4G08U MT29F4G
    Text: Freescale Semiconductor Application Note Document Number: AN4139 Rev. 0, 06/2010 Multi-NAND Disks Implementation Guide by Multimedia Applications Division Freescale Semiconductor, Inc. Austin, TX 1 Introduction Both the Flash Abstraction Layer FAL and Flash Media


    Original     		PDF AN4139 MT29F4G08AB MT29F4G08ABC MT29F4G08 IMX27ads xldr i.mx27 K9F1G08 K9F1G08U0A K9F4G08U MT29F4G

    K9LBG08U0M

    Abstract: K9LAG08u0m K9LBG usb schema k9lbg08 K9LAG08 IMx32 schema cpu MX27 ROM bootstrap protocol bad block
    Text: i.MX Platform PDK 1.4 Advanced Toolkit Standard Version User's Guide Document Number: 926-77203 Rev. 1.6 10/2008 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor


    Original     		PDF EL516 K9LBG08U0M K9LAG08u0m K9LBG usb schema k9lbg08 K9LAG08 IMx32 schema cpu MX27 ROM bootstrap protocol bad block

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    hy27ug082g2m

    Abstract: hy27ub082g4m hynix nand flash 128mb hynix nand hynix nand flash hy27uh084g2m hynix nand 512M th58nvg st nand flash application note TH58NVG2S3BFT00
    Text: eKF5280 USB2.0 Flash Controller Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. February 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation ELAN and ELAN logo


    Original     		PDF eKF5280 eKF5280 hy27ug082g2m hy27ub082g4m hynix nand flash 128mb hynix nand hynix nand flash hy27uh084g2m hynix nand 512M th58nvg st nand flash application note TH58NVG2S3BFT00