Untitled
Abstract: No abstract text available
Text: Transistors Transistor T SMD Type Product specification KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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KST8050
OT-23
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j3y transistor
Abstract: J3Y marking transistor J3Y TRANSISTOR SMD j3y
Text: Transistors Transistor T SMD Type Product specification KST8050S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Collector Current: IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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KST8050S
OT-23
j3y transistor
J3Y marking
transistor J3Y
TRANSISTOR SMD j3y
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PDF
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j3y smd
Abstract: SOT-23 J3Y SOT-23 J3Y npn
Text: Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Collector Current: IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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KST8050S
OT-23
j3y smd
SOT-23 J3Y
SOT-23 J3Y npn
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PDF
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Y1 SOT-23
Abstract: KST8050 marking y1 sot-23 y1 npn smd y1 Y1 marking Y1 smd smd marking y1 smd y1 sot-23 npn
Text: Transistors SMD Type NPN Transistors KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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Original
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KST8050
OT-23
Y1 SOT-23
KST8050
marking y1 sot-23
y1 npn
smd y1
Y1 marking
Y1 smd
smd marking y1
smd y1 sot-23 npn
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PDF
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10003 NPN
Abstract: STD1664 STB1132 a2 sot-89 KST-8004-001 TRANSISTOR 10003
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-001
500mA,
10003 NPN
STD1664
STB1132
a2 sot-89
KST-8004-001
TRANSISTOR 10003
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PDF
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STB1132
Abstract: STD1664
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-002
-500mA,
-50mA
-50mA,
30MHz
STB1132
STD1664
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PDF
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8002 amplifier
Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766
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STB1188
STD1766
OT-89
KST-8002-001
-200mA
-500mA,
30MHz
8002 amplifier
KST-8002-001
TRANSISTOR 10003
STB1188
STD1766
kst80
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PDF
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KST-8007-002
Abstract: MARKING CODE YA TRANSISTOR marking ya STD361
Text: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO.
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STD361
A/150
OT-89
KST-8007-002
KST-8007-002
MARKING CODE YA TRANSISTOR
marking ya
STD361
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PDF
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Untitled
Abstract: No abstract text available
Text: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766
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STB1188
STD1766
OT-89
KST-8002-002
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PDF
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Untitled
Abstract: No abstract text available
Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188
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STD1766
STB1188
OT-89
KST-8006-002
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PDF
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ZLDQ250A
Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
Text: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513
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pinwei0225
ZLDQ250A
pwm INVERTER welder
ZQ25A
zldq150a
ZQ50A
st600c
ZQ35A
diode m3
3phase bridge diode mds 60
SKE200A
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PDF
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Untitled
Abstract: No abstract text available
Text: DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DP500F
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DN500F
A/150
DP500F
OT-89
KST-8012-003
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STB1188
Abstract: STD1766
Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188
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STD1766
STB1188
OT-89
KST-8006-001
200mA
500mA
STB1188
STD1766
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PDF
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Untitled
Abstract: No abstract text available
Text: DP500F Se m i c o nduc t o r PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F • Switching Application Ordering Information Type NO. Marking DP500F Package Code
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DP500F
DN500F
DP500F
OT-89
KST-8014-003
500mA
150mA
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PDF
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STD1766
Abstract: Transistor B2 SOT-89 STB1188
Text: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188
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STD1766
STB1188
OT-89
KST-8006-002
STD1766
Transistor
B2 SOT-89
STB1188
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STB1132
Abstract: Transistor STD1664 a1 sot-89
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-003
STB1132
Transistor
STD1664
a1 sot-89
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PDF
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector dissipation =2W(Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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Original
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STD1664
STB1132
OT-89
KST-8004-002
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PDF
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Untitled
Abstract: No abstract text available
Text: STD1664 Semiconductor NPN Silicon Transistor Description • Medium power amplifier application Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.15V(Typ.) • Complementary pair with STB1132
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STD1664
STB1132
OT-89
KST-8004-003
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PDF
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sot-89 marking N5
Abstract: DN500F DP500F N5 npn transistor SOT89 N5 MARKING CODE
Text: DN500F Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Complementary pair with DP500F • Switching Application
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DN500F
A/150mA)
DP500F
OT-89
KST-8012-002
500mA
150mA
sot-89 marking N5
DN500F
DP500F
N5 npn transistor
SOT89 N5 MARKING CODE
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PDF
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DP500F
Abstract: Transistor DN500
Text: DP500F Semiconductor PNP Silicon Transistor Description • • • • Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with DN500 Switching Application Ordering Information Type NO. Marking DP500F Package Code P5
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DP500F
DN500
OT-89
KST-8014-004
DP500F
Transistor
DN500
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DN200F
Abstract: DP200F P04 transistor transistor p04
Text: DP200F Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.3V Typ. @IC /IB =-1A/-50mA) • Suitable for low voltage large current drivers • Excellent hFE linearity • Complementary pair with DN200F
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DP200F
-1A/-50mA)
DN200F
OT-89
KST-8013-000
-100mA
-50mA
DN200F
DP200F
P04 transistor
transistor p04
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PDF
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TRANSISTOR 10003
Abstract: STA346 marking d2
Text: STA346 Semiconductor PNP Silicon Transistor Features • Low saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability Ordering Information Type NO. Marking STA346 Package Code D2 SOT-89 Outline Dimensions
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STA346
STA346
OT-89
KST-8008-000
-100mA
-500mA,
-50mA
TRANSISTOR 10003
marking d2
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PDF
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Untitled
Abstract: No abstract text available
Text: STB1132 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W(Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664
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STB1132
STD1664
OT-89
KST-8001-003
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PDF
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DN500F
Abstract: DP500F
Text: DP500F Semiconductor PNP Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =-0.2V Typ. @IC /IB =-3A/-150mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F
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DP500F
-3A/-150mA)
DN500F
OT-89
KST-8014-000
-100mA
-150mA
DN500F
DP500F
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