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    Eaton Corporation Q18LTR-WS/WB

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    Mouser Electronics Q18LTR-WS/WB
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    Newark Q18LTR-WS/WB Bulk 1
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    TME Q18LTR-WS/WB 28 1
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    Eaton Corporation Q18LTR-WS

    Pushbutton Switches ILLUM PB 18X18 MOM WHITE
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    Eaton Corporation Q25LTR-WS

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    Newark Q25LTR-WS Bulk 1
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    Eaton Corporation Q25LTR-WS/WB

    Pushbutton Switches ILLUM PB 25X25 MOM WHITE WB
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    Mouser Electronics Q25LTR-WS/WB
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    Newark Q25LTR-WS/WB Bulk 1
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    TME Q25LTR-WS/WB 11 1
    • 1 $22.71
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    Legrand North America LLC 1597NTLTRW

    Self Test Gfci Rec/Nlight Tr 15A 125V W |Legrand Pass & Seymour 1597NTLTRW
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    Newark 1597NTLTRW Bulk 1
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    LTRW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector and


    Original     		PDF LTC5505-1/LTC5505-2 5505-X 300MHz LTC5505-1, 28dBm 18dBm LTC5505-2, 32dBm 12dBm

    6v dc to dc mobile charger circuit

    Abstract: ms10 diode wireless mobile charger block diagram 6v dc to dc mobile charger circuit with 500mA metal detector diagram PI LTRW DIODE RF DETECTOR LT 543 IC pin diagram schematic diagram of mobile phone charger audio envelope detector diode
    Text: LTC5505-1/LTC5505-2 RF Power Detector with Buffered Output and >40dB Dynamic Range U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ The LTC 5505-X is an RF power detector for RF applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector and


    Original     		PDF LTC5505-1/LTC5505-2 5505-X 300MHz LTC5505-1, 28dBm 18dBm LTC5505-2, 32dBm 12dBm 6v dc to dc mobile charger circuit ms10 diode wireless mobile charger block diagram 6v dc to dc mobile charger circuit with 500mA metal detector diagram PI LTRW DIODE RF DETECTOR LT 543 IC pin diagram schematic diagram of mobile phone charger audio envelope detector diode

    SMD LTYN

    Abstract: ic 4440 40w amplifier 12v ltls e3 Weston 2281 thermometer LT3060ITS8 Transistor SR 6863 TO-126 LTC3855EUH-1 LTPG e3 5Dx diode SMD LTABA
    Text: November 2009 Product Selection Guide Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers LED Drivers Hot Swap Interface Filters RF/Wireless Silicon Oscillators Comparators Supervisory Circuits References


    Original     		PDF D-59387 D-73230 1-800-4-LINEAR SMD LTYN ic 4440 40w amplifier 12v ltls e3 Weston 2281 thermometer LT3060ITS8 Transistor SR 6863 TO-126 LTC3855EUH-1 LTPG e3 5Dx diode SMD LTABA

    lm 7803 3V Positive Voltage Regulator

    Abstract: ic 4440 40w amplifier 12v ltsx e3 mt 1389 de LM 4440 AUDIO AMPLIFIER CIRCUIT w10 mic package bridge rectifier PF08109B smd code marking 162 sot23-5 ul 1741 grid te inverter datasheet ltqt e3
    Text: May 2009 Product Selection Guide Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers LED Drivers Hot Swap Interface Filters High Frequency Silicon Oscillators Comparators P Supervisor References Reference


    Original     		PDF D-59387 D-73230 1-800-4-LINEAR lm 7803 3V Positive Voltage Regulator ic 4440 40w amplifier 12v ltsx e3 mt 1389 de LM 4440 AUDIO AMPLIFIER CIRCUIT w10 mic package bridge rectifier PF08109B smd code marking 162 sot23-5 ul 1741 grid te inverter datasheet ltqt e3

    mosfet 4800

    Abstract: schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3
    Text: May 2008 Product Selection Guide Operational Amplifiers Data Converters Linear Regulators Switching Regulators µModule DC/DC Converters Battery Chargers Hot Swap Interface Filters High Frequency Silicon Oscillators Comparators µP Supervisor References High


    Original     		PDF D-59387 D-73230 1-800-4-LINEAR mosfet 4800 schematic diagram inverter 12v to 24v 30a schematic diagram inverter 500w USING MOSFET 4606 MOSFET INVERTER ltsx e3 mosfet driver ic mt 1389 de aot 110 optocoupler 4558 opamp schematic ic 4440 40w amplifier 12v LTPG e3

    Untitled

    Abstract: No abstract text available
    Text: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION eISSI FEATURES • DECEMBER 1998 Th IS41C16256 is a262,14 4 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode.


    OCR Scan     		PDF IS41C16256 16-bit IS41C16256 32-bit IS41C16256-35KI IS41C 16256-35TI 400-mil

    HY53C464LS

    Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
    Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin CMO442) 335ie P-021 A02-20-MA HY53C464LS HY53C464F hy53c464lf HY53C464LF70 HY53C464S An-313

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF KMM53216004BK/BKG 16Mx32SIMM 16Mx4 KMM53216004BK/BKG 16Mx4, KMM53216004B 16Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DECEMBER 1998 DESCRIPTION FEATURES The IS S I IS41C16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode.


    OCR Scan     		PDF IS41C16256 40-pin The755/ isa262 16-bit 400-mil IS41C16256-50K

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 4 1 C 1 6 1 0 0 /S IS 4 1 L V 1 6 1 0 0 /S 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY JANUARY 1999 DESCRIPTION FEATURES The ISSI IS41C16100/S and IS41LV16100/S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access


    OCR Scan     		PDF 16-MBIT) IS41C16100/S IS41LV16100/S 16-bit 32-bit cycles/16 IS41C16100S-50K IS41C16100S-50T

    KM41C16000BK

    Abstract: No abstract text available
    Text: K M 4 1 C 16 0 0 0 B K CMOS DRAM ELECTRONICS 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		PDF 16Mx1 KM41C16000BK KM41C16000BK

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E160 8 0BK/BS KMM364E160(8)0BK/BS EDO Mode 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 3 6 4 E 1 6 0 (8 )0 B is a 16M x64bits D ynam ic • Part Identification The S am sung Part num ber


    OCR Scan     		PDF KMM364E160 16Mx4, x64bits 168-pin 350Max 89Max)

    KKZ 09

    Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
    Text: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The


    OCR Scan     		PDF GM71V 6163A/AL 42pin 400mil KKZ 09 kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 3 6 6 F 8 0 (8 )3 B K 2 is a 8 M x6 4b its D ynam ic RAM high de n sity m em o ry m odule.


    OCR Scan     		PDF KMM366F80 168-pin 200Max 08Max)

    IS41C16100

    Abstract: IS41LV16100 Datex
    Text: IS 4 1 C 1 6 1 0 0 IS 4 1 L V 1 6 1 0 0 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE ISSI PRELIMINARY AUGUST 1998 DESCRIPTION FEATURES The IS S I IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access


    OCR Scan     		PDF IS41C16100 IS41LV16100 16-MBIT) cycles/16 IS41C16100) LV16100) IS41LV16100 16-bit IS41C16100-50K Datex

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM • Part Identification high density memory module. The Samsung KMM366F224CJ1


    OCR Scan     		PDF KMM366F224CJ1 1Mx16, 2Mx64bits 1Mx16bits 400mil 168-pin KMM366F224CJ1

    Untitled

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson BURR - BROWN o VFC32 Voltage-to-Frequency and Frequency-to-Voltage CONVERTER FEATURES DESCRIPTION • OPERATION UP TO 500kHz • EXCELLENT LINEARITY ±0.01% max at 10kHz FS ±0.05% max at 100kHz FS • V/F OR F/V CONVERSION


    OCR Scan     		PDF VFC32 500kHz 10kHz 100kHz VFC32

    Untitled

    Abstract: No abstract text available
    Text: IS41C16100 IS41LV16100 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION FEATURES The I S S I IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access


    OCR Scan     		PDF IS41C16100 IS41LV16100 16-MBIT) IS41C16100 IS41LV16100 16-bit 32-bit cycles/16

    Untitled

    Abstract: No abstract text available
    Text: IS41LV32256 256K x 32 8-Mbit EDO DYNAMIC RAM 3.3V, 100/83/66 MHz ADVANCE INFORMATION APRIL 1998 FEATURES DESCRIPTION • 262,144-word by 32-bit organization The IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals


    OCR Scan     		PDF IS41LV32256 144-word 32-bit IS41LV32256 DR007-0D

    TDA7296

    Abstract: TDA7296 diagram TDA7296V SGS-Thomson tda7296 audio power amplifier 60w 4 ohm operational amplifier discrete schematic 1N4148 60w audio amplifier circuit diagram 24v AUDIO AMPLIFIER CIRCUIT DIAGRAM
    Text: r z 7 S G S -T H O M S O N TDA7296 70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY PRODUCT PREVIEW • VERY HIGH OPERATING VOLTAGE RANGE ±35V ■ DMOS POWER STAGE . HIGH OUTPUT POWER (UP TO 60W MUSIC POWER) ■ MUTING/STAND-BY FUNCTIONS ■ NO SWITCH ON/OFF NOISE


    OCR Scan     		PDF TDA7296 TDA7296 Multiwatt15 TDA7296ably 2c5537^ TDA7296 diagram TDA7296V SGS-Thomson tda7296 audio power amplifier 60w 4 ohm operational amplifier discrete schematic 1N4148 60w audio amplifier circuit diagram 24v AUDIO AMPLIFIER CIRCUIT DIAGRAM

    IS41C16128

    Abstract: z1031
    Text: M IS 4 1 C 1 6 1 2 8 12ÔK x 16 2-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY JUNE 1997 DESCRIPTION FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms Refresh Mode : RAS-Only, CAS-before-RAS (CBR),


    OCR Scan     		PDF IS41C16128 40-pin The755/ IS41C16128 16-bit ThelS41C16128 IS41C16128-35K 400-mil IS41C16128-35T z1031

    Untitled

    Abstract: No abstract text available
    Text: KMM374F160 8 0BK1 DRAM MODULE KMM374F160(8)0BK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION T he S am su ng K M M 374F 160(8)0B K 1 FEATURES is a 16M x72bits • Part Identification D ynam ic RAM high d e n sity m em o ry m odule. T he S am sung


    OCR Scan     		PDF KMM374F160 16Mx4, x72bits 168-pin 350Max 89Max) 1680B 1600B

    AD107

    Abstract: LTRW 300v vdr AD100 AD101 AD103 M AD102 AD103 AD110 AD111
    Text: SCRs AD100-AD104 1.6 Amp, Planar AD114-AD118 AD107-AD111 FEA TU R ES • M axim um Gate Trigger C u rren t: 2, 20 or 200/iA • T ig h t G ate Trigger Voltage Range: .44 to ,6V • Voltage R ating s: to 400V • S p e cifie d fo r d v/d t and S w itch in g Tim e


    OCR Scan     		PDF AD100-AD104 AD107-AD111 200/iA AD100 AD107 AD114 AD102 AD103 AD100-AD1Q4 AD107-AD1U LTRW 300v vdr AD101 AD103 M AD103 AD110 AD111

    ZD 98

    Abstract: No abstract text available
    Text: IS 4 1 C 1 6 1 0 0 /S IS 4 1 L V 1 6 1 0 0 / S 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE ISSI PRELIMINARY OCTOBER 1998 DESCRIPTION FEATURES The ISSI IS41C16100/S and IS41LV16100/S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access


    OCR Scan     		PDF IS41C16100/S IS41LV16100/S 16-MBIT) cycles/16 cycles/128 IS41C16100/S) LV16100/S) IS41LV16100/S 16-bit ZD 98