MGFC40V5258 Search Results

MGFC40V5258 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC40V5258		Mitsubishi	5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC40V5258		Mitsubishi	5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET		Scan	PDF

MGFC40V5258 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC40V5258 MGFC40V5258	PDF
5.8 ghz amplifier 10w Abstract: Gaas Power Amplifier 10W Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC40V5258 MGFC40V5258 25deg June/2004 5.8 ghz amplifier 10w Gaas Power Amplifier 10W	PDF
5.8 ghz amplifier 10w Abstract: MGFC40V5258 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC40V5258 MGFC40V5258 June/2004 5.8 ghz amplifier 10w	PDF
5.8GHz Abstract: 5.8 ghz amplifier 10w MGFC40V5258 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	MGFC40V5258 MGFC40V5258 25deg 5.8GHz 5.8 ghz amplifier 10w	PDF
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	MGFC40V5258 MGFC40V5258	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1	PDF
MGFS45H2201G Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety	Original	H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf	PDF
Untitled Abstract: No abstract text available Text: ^24^02^ 0 Q 1 7 lì 7 b MITSUBISHI SEMICONDUCTOR <GaAs FET> 7Ô3 MGFC40V5258 5.2 ~ 5 .8 G H z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 5 2 5 8 is an internally im p edan ce-m atch ed G aA s power F E T especially designed for use in 5 . 2 - 5 . 8	OCR Scan	MGFC40V5258	PDF
MGFC40V5258 Abstract: 5.8 ghz amplifier 10w 5.8GHz Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2—5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET D ESCRIPTIO N The M G F C 4 0 V 5 2 5 8 is an in te rna lly impedance-matched GaAs power FET especially designed fo r use in 5 .2 — 5 .8 GHz band am plifiers. The herm etically sealed metal-ceramic	OCR Scan	MGFC40V5258 MGFC40V5258 ltem-01: ltem-51 5.8 ghz amplifier 10w 5.8GHz	PDF
3642G Abstract: No abstract text available Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m	OCR Scan		PDF