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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472A
MGFC42V6472A
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GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Abstract: MGFC42V6472A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472A
MGFC42V6472A
Item-51]
GAAS FET AMPLIFIER f 10Mhz to 2 GHz
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MGFC42V6472A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472A
MGFC42V6472A
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Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC42V6472 6.4 – 7.2 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472
MGFC42V6472
-45dBc
31dBm
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mgfc42v6472
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472 6.4 ~ 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004
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MGFC42V6472
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mgfc42v6472
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC42V6472A 6.4 – 7.2 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472A
MGFC42V6472A
-45dBc
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC42V6472A 6.4 – 7.2 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472A
MGFC42V6472A
-45dBc
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC42V6472 6.4 – 7.2 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472
MGFC42V6472
25ohm
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 6472 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472 is an internally impedance-matched GaAs power FE T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC42V6472
27C102P,
RV-15
16-BIT)
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r0049
Abstract: mgfc42v6472
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC42V6472 6 .4 ~ 7 .2 G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The O U TLIN E D R A W IN G M G F C 4 2 V 6 4 7 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6.4 ~ 7.2
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MGFC42V6472
MGFC42V6472
10dB/9/8
r0049
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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