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onsemi MMJT350T1G TRANS PNP 300V 0.5A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT350T1G	Digi-Reel	4,879		1	1 $1.14 10 $0.717 100 $1.14 1000 $0.36484 10000 $0.36484	Buy Now
	MMJT350T1G	Cut Tape	4,879		1	1 $1.14 10 $0.717 100 $1.14 1000 $0.36484 10000 $0.36484	Buy Now
	MMJT350T1G	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.33074 10000 $0.25177	Buy Now
Avnet Americas	MMJT350T1G	Reel		10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.23338	Buy Now
Mouser Electronics	MMJT350T1G		1,587			1 $0.58 10 $0.555 100 $0.393 1000 $0.299 10000 $0.251	Buy Now
Newark	MMJT350T1G	Reel			1,000	1 $0.334 10 $0.334 100 $0.334 1000 $0.334 10000 $0.301	Buy Now
	MMJT350T1G	Cut Tape			1,000	1 - 10 - 100 - 1000 $0.337 10000 $0.268	Buy Now
RS	MMJT350T1G	Bulk			10	1 - 10 $0.379 100 $0.36 1000 $0.322 10000 $0.322	Get Quote

Onlinecomponents.com	MMJT350T1G					1 - 10 - 100 - 1000 $0.2653 10000 $0.2409	Buy Now
Bristol Electronics	MMJT350T1G		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	MMJT350T1G		450			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MMJT350T1G		360			1 $0.9 10 $0.9 100 $0.54 1000 $0.45 10000 $0.45	Buy Now
Avnet Silica	MMJT350T1G			11 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MMJT350T1G			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi SMMJT350T1G TRANS PNP 300V 0.5A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMMJT350T1G	Digi-Reel	988		1	1 $1.01 10 $0.633 100 $1.01 1000 $0.31858 10000 $0.31858	Buy Now
	SMMJT350T1G	Cut Tape	988		1	1 $1.01 10 $0.633 100 $1.01 1000 $0.31858 10000 $0.31858	Buy Now
	SMMJT350T1G	Reel			1,000	1 - 10 - 100 - 1000 $0.23048 10000 $0.23048	Buy Now
Avnet Americas	SMMJT350T1G	Reel		0 Weeks, 2 Days	3,572	1 - 10 - 100 - 1000 - 10000 $0.18528	Buy Now
	SMMJT350T1G	Reel		10 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.19464	Buy Now
Mouser Electronics	SMMJT350T1G		11,990			1 $0.62 10 $0.525 100 $0.36 1000 $0.207 10000 $0.204	Buy Now
Newark	SMMJT350T1G	Reel			1,000	1 - 10 - 100 - 1000 $0.269 10000 $0.219	Buy Now
Rochester Electronics	SMMJT350T1G		900		1	1 $0.2271 10 $0.2271 100 $0.2135 1000 $0.193 10000 $0.193	Buy Now

TME	SMMJT350T1G				1	1 $0.603 10 $0.408 100 $0.368 1000 $0.282 10000 $0.243	Get Quote
Avnet Silica	SMMJT350T1G			11 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SMMJT350T1G			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	SMMJT350T1G		81,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MMJT350T1 TRANS PNP 300V 0.5A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT350T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MMJT9410T1 TRANS NPN 30V 3A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT9410T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	MMJT9410T1		923			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MMJT9435T3 TRANS PNP 30V 3A SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMJT9435T3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	MMJT9435T3		4,000		1	1 $0.1408 10 $0.1408 100 $0.1324 1000 $0.1197 10000 $0.1197	Buy Now

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MMJT Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF
MMJT350T1	On Semiconductor	Bipolar Power Transistor	Original	PDF
MMJT350T1-D	On Semiconductor	Bipolar Power Transistors PNP Silicon	Original	PDF
MMJT350T1G	On Semiconductor	TRANS GP BJT PNP 300V 0.5A 4SOT-223 T/R	Original	PDF
MMJT9410	Motorola	Bipolar Power Transistors	Original	PDF
MMJT9410	On Semiconductor	MMJT9410 - TRANSISTOR 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA, PLASTIC, CASE 318E-04, TO-261, 4 PIN, BIP General Purpose Power	Original	PDF
MMJT9410	On Semiconductor	Bipolar Power Transistors	Original	PDF
MMJT9410/D	On Semiconductor	Motorola Preferred Device	Original	PDF
MMJT9410-D	On Semiconductor	Bipolar Power Transistors NPN Silicon	Original	PDF
MMJT9410G	On Semiconductor	TRANS GP BJT NPN 30V 3A 3SOT-223	Original	PDF
MMJT9410T1	On Semiconductor	MMJT9410 - TRANSISTOR 10 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318E, 4 PIN, BIP General Purpose Small Signal	Original	PDF
MMJT9410T1	On Semiconductor	Bipolar Power SOT223 NPN 3A 30V	Original	PDF
MMJT9410T1G	On Semiconductor	Bipolar Power SOT223 NPN 3A 30V; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000	Original	PDF
MMJT9410T1G	On Semiconductor	Bipolar Power S0T223 NPN 3A 30V TR	Original	PDF
MMJT9410T3	On Semiconductor	MMJT9410 - TRANSISTOR 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA, PLASTIC, CASE 318E-04, TO-261, 4 PIN, BIP General Purpose Power	Original	PDF

MMJT9435	Motorola	Bipolar Power Transistors	Original	PDF
MMJT9435	On Semiconductor	MMJT9435 - TRANSISTOR Si, SMALL SIGNAL TRANSISTOR, CASE 318E-04, 4 PIN, BIP General Purpose Small Signal	Original	PDF
MMJT9435	On Semiconductor	Bipolar Power Transistor	Original	PDF
MMJT9435/D	On Semiconductor	Motorola Preferred Device	Original	PDF
MMJT9435-D	On Semiconductor	Bipolar Power Transistors PNP Silicon	Original	PDF
MMJT9435G	On Semiconductor	TRANS GP BJT PNP 30V 3A 4SOT-223	Original	PDF

MMJT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD 140 transistor Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	MMJT9435/D MMJT9435 BD 140 transistor MMJT9435 MOTOROLA TRANSISTOR motorola bjt	PDF
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G	PDF
MMJT9410 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon Motorola Preferred Device • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE	Original	MMJT9410/D MMJT9410 MMJT9410	PDF
Untitled Abstract: No abstract text available Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE	Original	MMJT350T1 OT-223 MMJT350T1/D	PDF
transistor BD 736 Abstract: TRANSISTOR bd 737 Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC	Original	MMJT350T1 OT-223 transistor BD 736 TRANSISTOR bd 737	PDF
bd 743 transistor Abstract: 9410A bd 743 Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain − http://onsemi.com hFE • • • • = 85 (Min) @ IC = 0.8 Adc = 60 (Min) @ IC = 3.0 Adc	Original	MMJT9410 OT-223 bd 743 transistor 9410A bd 743	PDF
transistor bd 370 Abstract: 30240 MMJT350T1 Text: ON Semiconductort MMJT350T1 Bipolar Power Transistors PNP Silicon 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 2.75 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring	Original	MMJT350T1 r14525 MMJT350T1/D transistor bd 370 30240 MMJT350T1	PDF
MMJT9435 Abstract: No abstract text available Text: ON Semiconductort MMJT9435 Bipolar Power Transistors ON Semiconductor Preferred Device PNP Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9435 r14525 MMJT9435/D MMJT9435	PDF
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 85 (Min) @ IC = 0.8 Adc	Original	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G	PDF
SMMJT350T1G Abstract: marking code E3 sot223 306 marking code transistor Text: MMJT350T1G, MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −	Original	MMJT350T1G, SMMJT350T1G AEC-Q101 MMJT350T1/D marking code E3 sot223 306 marking code transistor	PDF
T350 sot223 Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR	Original	MMJT350T1 OT-223 MMJT350T1/D T350 sot223 AYW marking code IC t350 MMJT350T1 MMJT350T1G	PDF
Untitled Abstract: No abstract text available Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage	Original	MMJT350T1G AEC-Q101 OT-223 MMJT350T1/D	PDF
Untitled Abstract: No abstract text available Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus = 300 Vdc @ IC	Original	MMJT350T1 OT-223 MMJT350T1/D	PDF
Untitled Abstract: No abstract text available Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS	Original	MMJT9410 OT-223 MMJT9410/D	PDF

BD 140 transistor Abstract: BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410 Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA MMJT9410 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device NPN Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc	Original	MMJT9410/D MMJT9410 BD 140 transistor BD NPN transistors BJT IC Vce BJT npn motorola MOTOROLA TRANSISTOR MMJT9410	PDF
MMJT9410 Abstract: power bjt Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt	PDF
Untitled Abstract: No abstract text available Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	MMJT9410 MMJT9410/D	PDF
MMJT Abstract: No abstract text available Text: MMJT350T1G, MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −	Original	MMJT350T1G, SMMJT350T1G MMJT350T1/D MMJT	PDF
transistor bd 370 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT94I0/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors MMJT9410 NPN Silicon • Collector -Emitter Sustaining Voltage — V q e o s u s = 30 Vdc (Min) @ lc = 10 mAdc • High DC Current Gain — hpE = 85 (Min) @ lc = 0.8 Adc	OCR Scan	MMJT94I0/D OT-223 MMJT9410 318E-04, MMJT9410/D transistor bd 370	PDF
BJT npn motorola Abstract: transistor bd 370 power transistor bd JT9410 motorola bjt Text: MOTOROLA Order this document by MMJT9410/D SEMICONDUCTOR TECHNICAL DATA M M Ü T9410 Preliminary Data Sheet B ipolar Pow er Transistors Motorola Preferred Device NPN Silicon • Collector -Emitter Sustaining Voltage — VcEO sus = 30 Vdc (Min) @ Iq = 10 mAdc	OCR Scan	MMJT9410/D T9410 OT-223 31SE-04, BJT npn motorola transistor bd 370 power transistor bd JT9410 motorola bjt	PDF
lb 156 Abstract: No abstract text available Text: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA Bipolar Power Transistors M M JT9435 PNP Silicon • Collector -E m itte r Sustaining Voltage — V cEO isus^ = 30 Vdc Min @ Iq = 10 mAdc • High DC Current Gain — hpE = 125 (Min) @ lc = 0.8 Adc	OCR Scan	MMJT9435/D JT9435 318E-04, lb 156	PDF
3SK127 Abstract: No abstract text available Text: 3SK127 mmjtmmm o tv * * - * . UHF O TV * 3 - * . UHF $ ««♦ * JÉ a 8 8 +m tf s • r— bt \ u K M * * m * * * » c a n - c v * * • -f# : Cr j g » Q 0 3 p F • ftiir r. I» * * o 3 - 3 « rr P* > ; : NF-a2dB(«ai) 4 t~ • \|s —?. ( ?ft 2 5 'C )	OCR Scan	3SK127 l02B3 I0-100Ã tD-10Â i0-10Â 3SK127	PDF
Untitled Abstract: No abstract text available Text: 3O T 0 L E D * ï 6'J :T Â W S l'< D £ f o \ * m P P e e w - lz m t 'ü < r c t S l\ o L E D ^ - T h t tliC Ö M S r W a P P e e ^ u /tí- ) J S D -0 2 L mmws&mmjTúLjm •asgfflBa(DC9v) fB E B B fflB ft(D C 3V ) mMmw/moit FDP »1 0 « w k \| BBÜTL*	OCR Scan	SD-02L T689-1121 I15-2 TEL0857-53-3699 SD-02L W88ffi 70dB/mJiLt 100X106X65mm TEL0857-53-3699 T689-11	PDF
Untitled Abstract: No abstract text available Text: - THI¿ DRAWTNG'ITTjNPÜèÛSHEb. COPYRIGHT D PACKft6E . TV £ 3 4 2 * -Z - ' U3C DIST REVISIONS 14 G TnT DESCRIPTION (MMJtTAßy L e o S É P l& JÊ & 4 & -1 - A LL RIGHTS RESERVED. SY TYCO ELECTRONICS CORPORATION - P a ^ t MO R ÉU A ëltï FÜR PUBLICATION	OCR Scan	18MAR 18MAR04 I710S 18MAR0+ 31MAR2000	PDF

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onsemi MMJT350T1G

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MMJT Datasheets (28)

MMJT Datasheets Context Search

BD 140 transistor

MMJT9410

MMJT9410

Untitled

transistor BD 736

bd 743 transistor

transistor bd 370

MMJT9435

MMJT9410

SMMJT350T1G

T350 sot223

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BD 140 transistor

MMJT9410

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MMJT

transistor bd 370

BJT npn motorola

lb 156

3SK127

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