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    MOSFET 6N100 Search Results

    MOSFET 6N100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 6N100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MOSFET 6N100

    Abstract: 6n90 equivalent 6N90 transistor ixfh application note D-68623
    Text: IXFH 6N90 IXFM 6N90 IXFH 6N100 IXFM 6N100 VDSS HiPerFETTM Power MOSFET IXFH/FM 6N90 900 V IXFH/FM 6N100 1000 V ID25 RDS on trr 1.8 Ω 250 ns 2.0 Ω 250 ns 6A 6A N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions


    Original     		6N100 6N100 O-247 D-68623 MOSFET 6N100 6n90 equivalent 6N90 transistor ixfh application note PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    MOSFET 6N100

    Abstract: 26n50 N06 MOSFET 6n90 transistor ixfh application note mosfet 24n50 transistor equivalent mosfet 24n50 IXFH26N50 76N06 24N50
    Text: IXFH 76N06 Preliminary Data IXFH 76N06 IXFH 76N07-11 IXFH 76N07-12 HiPerFETTM Power MOSFETs IXFH 76N07-11 IXFH 76N07-12 VDSS ID25 RDS on trr 60 V 70 V 70 V 76 A 76 A 76 A 11 mΩ 11 mΩ 12 mΩ 150 ns 150 ns 150 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family


    Original     		76N06 76N07-11 76N07-12 O-247 6N100 6N100 D-68623 MOSFET 6N100 26n50 N06 MOSFET 6n90 transistor ixfh application note mosfet 24n50 transistor equivalent mosfet 24n50 IXFH26N50 76N06 24N50 PDF

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS PDF

    dual diode TO254AA 600V

    Abstract: No abstract text available
    Text: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package


    OCR Scan     		1N100SA 5N100SA OM1N100ST 3N100SA MIL-19500, 10secs. O-257AA O-254AA 205Crawtord dual diode TO254AA 600V PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS


    OCR Scan     		6N100E/D MTW6N100E 340K-01 PDF

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E PDF

    6N100E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r T O -2 4 7 W ith Is o la te d M ounting H ole TMOS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n


    OCR Scan     		PDF

    1XFH12n100

    Abstract: transistor 13n80
    Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure


    OCR Scan     		4bflb22b 1532A 200ns) IXFH12N100 IXFH10N100 IXFM12N100 IXFM10N100 1XFH12n100 transistor 13n80 PDF