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    NA52 Search Results

    NA52 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RNA52A10MMEL-E Renesas Electronics Corporation Application Specified Reset IC Visit Renesas Electronics Corporation
    RNA52A10T#H5 Renesas Electronics Corporation Application Specified Reset IC Visit Renesas Electronics Corporation
    REG102NA-5/250G4 Texas Instruments 250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
    REG113NA-5/250G4 Texas Instruments 400mA, Low-Noise, Low-Dropout Regulator 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
    REG710NA-5/250G4 Texas Instruments 30-mA Switched-Cap DC-DC Converter with fixed 5-V Output 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
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    NA52 Price and Stock

    Matsuo Electric Co Ltd JAG-7202202-NA52010

    FUSE BOARD MOUNT 2A 72VDC 1206
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    DigiKey JAG-7202202-NA52010 Digi-Reel 3,869 1
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    JAG-7202202-NA52010 Cut Tape 3,869 1
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    Matsuo Electric Co Ltd JAJ-6002133-NA52

    FUSE BOARD MNT 12.5A 60VDC 1206
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    DigiKey JAJ-6002133-NA52 Digi-Reel 3,790 1
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    JAJ-6002133-NA52 Reel 2,000 2,000
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    Matsuo Electric Co Ltd JAK-6002103-NA52

    FUSE BOARD MOUNT 10A 60VDC 1206
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    DigiKey JAK-6002103-NA52 Digi-Reel 3,705 1
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    Matsuo Electric Co Ltd JAG-3202501-NA52010

    FUSE BOARD MNT 500MA 32VDC 1206
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    DigiKey JAG-3202501-NA52010 Digi-Reel 2,974 1
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    JAG-3202501-NA52010 Cut Tape 2,974 1
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    Texas Instruments REG102NA-5-250

    IC REG LINEAR 5V 250MA SOT23-5
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    DigiKey REG102NA-5-250 Digi-Reel 1,389 1
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    REG102NA-5-250 Reel 1,250 250
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    REG102NA-5-250 Cut Tape 139 1
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    Find more NA52 price and stock on Findchips.com

    NA52 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NA5204F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NA52U Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NA52U Unknown Shortform Transistor Datasheet Guide Short Form PDF
    NA52U Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    NA52U Unknown Cross Reference Datasheet Scan PDF
    NA52W Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NA52W Unknown Shortform Transistor Datasheet Guide Short Form PDF
    NA52W Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    NA52W Unknown Cross Reference Datasheet Scan PDF

    NA52 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m6845

    Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
    Text: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate


    Original     		PDF Table128, m6845 NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics

    NA38

    Abstract: NA63 YN17 YN24 YN26 na46 YN11 na51 AE12AE13 YN40
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver


    Original     		PDF VSC836 160Gb/s 64x65 VSC836 G52248-0, NA38 NA63 YN17 YN24 YN26 na46 YN11 na51 AE12AE13 YN40

    NA2X

    Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


    Original     		PDF

    na44

    Abstract: NA51 transistor datasheet na52 transistor datasheet na60 U2 A63 NA11 NA12 NA13 NA43 na46
    Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information 2.5Gb/s 64x65 Crosspoint Switch VSC836 Features • 64 Input by 65 Output Crosspoint Switch • On-chip Input Terminations • 2.5Gb/s NRZ Data Bandwidth • PECL Compatible Differential Output Driver


    Original     		PDF 64x65 VSC836 160Gb/s VSC836 G52248-0, na44 NA51 transistor datasheet na52 transistor datasheet na60 U2 A63 NA11 NA12 NA13 NA43 na46

    TTL 740 NAND propagation delay

    Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor
    Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities


    Original     		PDF

    NA50

    Abstract: nA41 na44 NA19 NA63 AE12AE13 NA38
    Text: VITESSE SEMICONDUCTOR CORPORATION Datasheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-blocking • Fully Differential Data Path, PECL Compatible • Full Broadcast/Multicast Capability • On-chip Input Terminations • 1.6 Gbits/sec NRZ Data Bandwidth


    Original     		PDF VSC852 64x64 VSC852 G52245-0, NA50 nA41 na44 NA19 NA63 AE12AE13 NA38

    tip320

    Abstract: MJ032C 9t18 80586 MJ032 4050gg diode hitachi MJE-371 BOT32 MJE371
    Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 80582 80940 80940 80940 80940F 80940F 2N6419 2N6419 ~~~~~7 25 30 2S81215 80T30DF 80T320F TIP320 80942 80942 80942 80942F ~~~~~~5 35 40 80X16 80X16 TIP32E TIP32E TIP32E TIP32F TIP32F TIP32F +~~~~;~g


    Original     		PDF O-126var O-126 O-220 O-127var 127var 12Gvar 220A8 tip320 MJ032C 9t18 80586 MJ032 4050gg diode hitachi MJE-371 BOT32 MJE371

    NA52 transistor datasheet

    Abstract: na52 Multiplexor 64 inputs na44 NA51 transistor data sheet NA51 transistor datasheet na31 NA62 NA11 NA12
    Text: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 1.6Gb/s 64x64 Crosspoint Switch VSC852 Features • 64 Input by 64 Output Non-Blocking • Fully Differential Data Path, PECL-Compatible • Full Broadcast/Multicast Capability • On-Chip Input Terminations • 1.6Gb/s NRZ Data Bandwidth


    Original     		PDF 64x64 VSC852 VSC852 64x64 G52245-0, NA52 transistor datasheet na52 Multiplexor 64 inputs na44 NA51 transistor data sheet NA51 transistor datasheet na31 NA62 NA11 NA12

    8085 mini projects

    Abstract: full subtractor circuit using decoder and nand ga DF102 ic tda 2030 8085 mini projects with low budget AMI 9198 na44 DF422 16 BIT ALU design with verilog/vhdl code AMI 8232
    Text:  0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6  9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the


    Original     		PDF

    LC7250

    Abstract: lc7259 LC7253 SP8629 2SC1175
    Text: r^ ¡ SAfÊYO ¡N O . 5 2 3 H 2188 • J L Â * 9 a / NûC523F '84 MOS ^ > V 7 v 9 Na523G ¿ £ l A 'iL X < ' -\. L C 7 2 5 - 05* « * x - f 'vV . i > ÿ ^ « à f t » L E D i i ^ t e l K îjf • ; P M / am • * - A 7 ÿ + S : • * - ? FM/AM : B /


    OCR Scan     		PDF NaC523F( Na523G 20-a-5T 18/IB LC7250 lc7259 LC7253 SP8629 2SC1175

    NA51 transistor

    Abstract: na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51
    Text: NATL SEMICOND {DISCRETE} 6501130 NATL CL Z CL CÎ ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 in < z r\ Z Q. 10 < NA51 (NPN) 3.5Am p complementary pow er transistors NA52(PNP) features PH packages and lead coding


    OCR Scan     		PDF tS0113Q O-126 O-220 T0-220 35S7b NB021EY NB122EY NB112EY NB312E NA51 transistor na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51

    NA51 transistor

    Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn
    Text: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding


    OCR Scan     		PDF tSD113D O-126 T0-220 O-126 Q03SS7b 10iiF 33-If NB021EY NB122EY NR001E NA51 transistor NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn

    7408, 7404, 7486, 7432

    Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
    Text: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers


    OCR Scan     		PDF TGC100 20-mA Sink/12mA TDB10LJ 120LJ TDC11LJ TDN11LJ 100MHz 7408, 7404, 7486, 7432 RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404

    NA51W

    Abstract: NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322
    Text: NB311,312,313 NPN , NB321,3 2 2 ,323(PNP) NATL SEUICOND {DISCRETE} 6501130 NATL ifl EMICOND, (DISCRETE) 28C National Semiconductor r - 35601 n - 2 , } 3 ^ 0 - 7 NB311, 312, 313 (NPN) * , NB321, 3 2 2,3 N P ) 1,5ArnP com plem entary pow er drivers 2 ,3 23(P


    OCR Scan     		PDF bSD113D NB311, NB321, andTO-202 b5D113D NB313Y" NB022EY NR001E NB113EY NA51W NA52W NB313Y NA52W pnp 35604 NB311 NB312 NB313 NB321 NB322

    434 289

    Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
    Text: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance


    OCR Scan     		PDF TGC100M 0010LJ LH110LJ 434 289 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20

    2SJ261

    Abstract: SC46 T0220AB
    Text: - KNo. N *5271 N o . % 5271 SAN YO 90795 2SJ261 P^-V *;H V IO SJfi'> ' □ h V > i > X9 ü£¡6 ttf t v ^ y # . •m t m su. Absolute Maximum Ratings / Ta = 25°C K 1- " { 'y - 'J —XfiïJIÎ Vugs y -h -y -x E Kl" f DC) K V 'i y ^ M (^.Jl/X) VGSS ID


    OCR Scan     		PDF 2SJ261 100mA 2052C T0220AB T370-05 90795YK 2SJ261 SC46

    bb 9790 schematic diagram

    Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
    Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one


    OCR Scan     		PDF 32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S

    TSC500

    Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
    Text: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories


    OCR Scan     		PDF TSC500 64-mA TP000LJ TP006LJ TP008LJ TP009LJ TP010LJ 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068

    DL05L

    Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
    Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are


    OCR Scan     		PDF 2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


    OCR Scan     		PDF AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

    5201A

    Abstract: UHC4 LC75391 LC75391M CEAG
    Text: ; ì X a - KNo. N 5201 a NO. 5201A J . — X D 0495 mím C M O S LSI L C 7 5 3 9 1 , G I G 7 L C 7 5 3 9 1 M LC75391,75391M l±, A i t i c i » f 1 "j V * ' *J J*, V - x n & m i i > V T * * - v ß J ) t - 0 f i t í ' O i r í í i , / / " : 4 á íü ;s w u ííi¿ ;


    OCR Scan     		PDF D0495 LC75391, LC75391M lc75391 75391mà 20dBU2dBX -20dB^ -32dBâ -20dBV 5201A UHC4 LC75391M CEAG

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    AMP A047

    Abstract: 56ti bjmf N526 1353C 4HVS N5260 31062E
    Text: KNo. N 5 2 6 0 A ¡N O . 5260A 13196 - n . - X »15260 i 3 U * ‘ * . T < r t : S v \ /% S ia » L A 8 5 1 8 M LA8610M {*, - KV n 3 - I ' U Z f U x e -:f * * ' / « ? D - t t V n y t ^ a / / V h * 'f y ^ . / V ""'V, > i * ^ i t y *, a*e h 7 -? 8 B •i” V


    OCR Scan     		PDF N5260A mfc-zL-xm260 LA8518M LA8618MÃ 200mW LA8518M AMP A047 56ti bjmf N526 1353C 4HVS N5260 31062E

    N209f

    Abstract: No abstract text available
    Text: ;X5:Z3 - KMo N*5239A N O . ^ 5239A 41996 i . - X 'SNc-5239 LE28F4001M, T, R-15/20 CM OS LSI 4M 5242887-FX8^ / 777'>i3^ LE28F4001M, T, Rl±, 524288 7 - H x 8 t -V h X V ;K - !' K . J S f% WfflCMOSHÏ«iOfÎffli;i U. * i î , filiti« fccOffiV' J: ÿ fe £ : ¡ g y r i '$


    OCR Scan     		PDF Na5239 LE28F4001M, R-15/20 5242887-FX8^ LE28F400lM1TtRii, I50ns/200na LE28F4001M LE28F40G1T LE28F4001RÃ LE28F4001 N209f