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    NJ26L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor F13

    Abstract: transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212
    Text: Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original
    NJ26L 2N5397, 2N5398 30ion transistor F13 transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212 PDF

    PJ32

    Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
    Text: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max


    Original
    SMP3369 SMP3370 SMP3458 SMP3459 SMP3460 SMP5462 SMPJ174 SMPJ175 PJ32 nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393 PDF

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116 PDF

    2N5397

    Abstract: SMP5398 2N5398 SMP5397 1na30
    Text: Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage


    Original
    2N5397, 2N5398 2N5397 SMP5397, SMP5398 2N5397 SMP5398 2N5398 SMP5397 1na30 PDF

    2n4117 equivalent

    Abstract: transistor j210 J231 transistor 2N4119 2N4119A J231 2N5461 2N4339 2N4868A J210 SMP4869A
    Text: Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage


    Original
    2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A 2N4117 2N4117A 2N4118 2N4118A 2n4117 equivalent transistor j210 J231 transistor 2N4119 2N4119A J231 2N5461 2N4339 2N4868A J210 SMP4869A PDF

    J212

    Abstract: SMPJ212 1NA15
    Text: Databook.fxp 1/13/99 2:09 PM Page B-57 B-57 01/99 J212 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier ¥ General Purpose Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    NJ26L 226AA SMPJ212 J212 SMPJ212 1NA15 PDF

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high


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    D5GM33Ã G0037S7 T-91-01 NJ26L NJ26L -R009 PDF

    2N5396

    Abstract: 2n5397
    Text: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage


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    2N5397, 2N5398 2N5397 000074G 2N5396 2n5397 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. ^3 D • flS13A5Q Q003b i o T " | i S E M I C O N D S / ICS 9 3 D 0 3 6 1 0 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS


    OCR Scan
    flS13A5Q Q003b TMPF4858A TMPF4859 TMPF4859A 7MPF4860 TMPF4860A TMPF4861 TMPF4861A TMPF4867 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions


    OCR Scan
    QD03bll TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454 TMPFBC264A TMPFBC264B PDF

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0


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    2N4393 2N4856 2N4856A 2N4857 2N3824 PDF

    tp5950

    Abstract: No abstract text available
    Text: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits


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    00Q3b01 TP4858A TP4659 TP4859A TP4860 TP4860A TP4861 TP4861A TP4867 TP4868 tp5950 PDF

    THJU401

    Abstract: THJJ300B
    Text: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss


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    THJBC264A THJBC264B THJBC264C THJBC264D THJBF244A THJBF244B THJBF244C THJBF246A THJBF246B THJBF246C THJU401 THJJ300B PDF

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device


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    SGM33Ã D003bl5 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 PDF

    Untitled

    Abstract: No abstract text available
    Text: AL L E G R O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SPRA GU E. INC T3 D • 0SGM33fl D D O B b l l S E M I C O N D S / ICS ö ■ ALGR 93 D 03611 $ 7 = Z?-ZS SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at Tfl = 25°C


    OCR Scan
    0SGM33fl TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454 TMPFBC264A TMPFBC264B PDF

    MPF103

    Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
    Text: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5


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    TP5951 TP5952 TP5953 TP6449 MPF103 J300B J112A MPF104 MPF105 BF244A BF246A NJ32 PDF

    2N5485

    Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
    Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG


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    DD03b01 TP4858A NJ132 TP4859 TP4859A O-226AA/STYLES 2N5485 TP5668 NJ132 NJ16 TP4860 TP4860A TP4861 PDF

    NJ450

    Abstract: nj26 interfet INTERFET BF256B
    Text: F8 9 -9 7 Small Outline Surface Mount Package Devices N-CH ANN EL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type BVg s S V gS(OFF) >g s s Min (V) m Max (nA) SMP BF244C SMP BF246A SMP BF246B SMP BF246C SMP BF256A -3 0 -2 5 -2 5 -2 5 -3 0 -1.0 -1.0


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    BF244C BF246A BF246B BF246C BF256A BF256B BF256C SMPJ108 SMPJ109 SMPJ110 NJ450 nj26 interfet INTERFET PDF

    BC2640

    Abstract: smp6453
    Text: IN T E R F E T CORP »F|Ma5bfiflfl o o o o iza i SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS a tT A = 2S°C . ^BHICSS - - Device Type Min. V fti le ItiA) Max. (nA) SMP 5951 SMP 5952 SMP 5953 SMP 6451 SMP 6452


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    BC264A BC264B 6C264C BC2640 BF244A BF244B BF244C BF246A BF246B BF246C smp6453 PDF

    TMPFBF244C

    Abstract: tmpfj308 NJ32 TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454
    Text: SPRAGUE/SEÎ1IC0ND 8514019 SPRAGUE. GROUP T3 D • SEMICONDS/ ICS 0513050 93D QD03bll 03611 =1 ■ $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH V(BR]GSS Limits Igss Device Type Min. (V)


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    0D03hll TMPF5951 TMPF5952 TMPF5953 TMPFBF244C tmpfj308 NJ32 TMPF6451 TMPF6452 TMPF6453 TMPF6454 PDF

    Untitled

    Abstract: No abstract text available
    Text: "H INTER F E T CORP DE I 4fl21.ßflñ DOOOQflfl 5 METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS ’ v.; ">r ELECTRICAL CHARACTERISTICS al TA = 25°C ? ' V BRJGSS limits less @Vgs (V Min. (V) Max. (V) 2N3824 -50 -1.0 -0.1 -30 -30 -1.0 -0.1 -20 2N3966 2N3970


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    2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 PDF

    AUO-PL321.15

    Abstract: itt+zx+15 DIODE+C06+15 murata+filter+cfj455k+15 B456+F+15 zener+phc+15
    Text: ALL E GR O M I C R O S Y S T E M S Ö514019 SPRAGUE. INC ^3 D • 05D433S SEMICONDS / ICS 0 0 Q 3 h l 0 b ■ ALGR 93D 03610 ]> SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at TA = 25°C VgS OH Limils


    OCR Scan
    05D433S TMPF4858A TMPF4859 TMPF4859A TMPF4860 TMPF4860A TMPF4861 TMPF4861A TMPF4867 TMPF4868 AUO-PL321.15 itt+zx+15 DIODE+C06+15 murata+filter+cfj455k+15 B456+F+15 zener+phc+15 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTER F E T CORP 2bE D • MÖZbflßö OGOGlö^ Q ■ T-'q -(fO A3 N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C 'os; V G Siom VfBmcss Device Type Limits Ig s s Conditions ISV«* (V Min (V) M u. (V) - 0 .1 - 0 .1 -0 3 - 0 .3 - 0 .3 -30


    OCR Scan
    2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 PDF

    NJ132

    Abstract: THJ4416A THJ4856 THJ4856A THJ4857 THJ4857A THJ4858 THJ4858A
    Text: AL L E GR O M I C R O S Y S T E M S 8 5 140 19 S P R A G U E . INC T3 D • 050433Ô S E MI C OND S / I C S 93D 0 0 0 3 5 0 0 1 ■ ALGR 0 3 5 8 0 2 > T -?-Z 5 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C


    OCR Scan
    G5D433Ã DD03Sa0 T-22-25 THJ4416A THJ4856 NJ132 THJ4856A NJ26L THJ5432 NJ903 NJ132 THJ4857 THJ4857A THJ4858 THJ4858A PDF