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NTE Electronics Inc NTE346 Rf Power Transistor, Npn 20V 500Mhz To39; Transistor Polarity:Npn; Collector Emitter Voltage Max:20V; Transition Frequency:500Mhz; Power Dissipation:1W; Continuous Collector Current:400Ma; No. Of Pins:3Pins; Product Range:-; Msl:- Rohs Compliant: Yes \|Nte Electronics NTE346
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE346	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE346		4			1 $9.58 10 $8.71 100 $6.72 1000 $6 10000 $5.91	Buy Now
Bristol Electronics	NTE346		2		1	1 $6.72 10 $6.72 100 $6.72 1000 $6.72 10000 $6.72	Buy Now
Quest Components	NTE346		1			1 $9 10 $6 100 $6 1000 $6 10000 $6	Buy Now
NTE Electronics Inc NTE340 Transistor, bjt, npn,18V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: No \|Nte Electronics NTE340
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE340	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE340		2			1 $9.44 10 $8.58 100 $6.62 1000 $5.91 10000 $5.82	Buy Now
Bristol Electronics	NTE340		5		1	1 $11.2 10 $7.28 100 $7.28 1000 $7.28 10000 $7.28	Buy Now
	NTE340		4			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE340		10			1 $13.0725 10 $6.5363 100 $6.5363 1000 $6.5363 10000 $6.5363	Buy Now
	NTE340		4			1 $15 10 $7.5 100 $7.5 1000 $7.5 10000 $7.5	Buy Now
	NTE340		3			1 $7.5 10 $6.25 100 $6.25 1000 $6.25 10000 $6.25	Buy Now
TME	NTE340		3		1	1 $9.11 10 $7.25 100 $6.51 1000 $6.51 10000 $6.51	Buy Now
NTE Electronics Inc NTE343 Transistor NPN Silicon 35V IC-3.5 Po=14W 175mhz RF Power Output
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE343		11			1 $50.86 10 $40.8 100 $36.33 1000 $34.97 10000 $34.97	Buy Now
NTE Electronics Inc NTE344 replacement Transistors RfPwr 30W 130-175MHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE344		8			1 $141.61 10 $46.29 100 $32.8 1000 $32.8 10000 $32.8	Buy Now
NTE Electronics Inc NTE349 Transistor NPN Silicon 36V IC=2A Po=10W 130-175mhz RF Power AMP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	NTE349		2			1 $61.55 10 $48.93 100 $42.79 1000 $41.62 10000 $41.62	Buy Now
Bristol Electronics	NTE349		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	NTE349		2			1 $40.482 10 $40.482 100 $40.482 1000 $40.482 10000 $40.482	Buy Now
	NTE349		1			1 $39 10 $39 100 $39 1000 $39 10000 $39	Buy Now

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NTE34 Datasheets (11)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE340	NTE Electronics	Silicon NPN Transistor RF Power Output, High Frequency	Original	PDF
NTE341	NTE Electronics	Silicon NPN Transistor RF Power Output	Original	PDF
NTE342	NTE Electronics	Silicon NPN Transistor RF Power Output (P O = 6W, 175MHz)	Original	PDF
NTE343	NTE Electronics	Silicon NPN Transistor RF Power Output (P O = 14W, 175MHz)	Original	PDF
NTE344	NTE Electronics	Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz	Original	PDF
NTE345	NTE Electronics	Silicon NPN Transistor RF Power Amp, Driver	Original	PDF
NTE346	NTE Electronics	Silicon NPN Transistor RF Power Transistor	Original	PDF
NTE347	NTE Electronics	Silicon NPN Transistor	Original	PDF
NTE3470	NTE Electronics	Integrated Circuit Floppy Disk Read Amplifier System	Original	PDF
NTE348	NTE Electronics	Silicon NPN Transistor RF Power Amp, Driver	Original	PDF
NTE349	NTE Electronics	Silicon NPN Transistor RF Power Amp, Driver	Original	PDF

NTE34 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE342 Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)	Original	PDF	NTE342 175MHz) NTE342 175MHz 100mA, 600mW, 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
NTE347 Abstract: No abstract text available Text: NTE347 Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz Description: The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz. Features: D Low lead inductance stripline package for easier design and increased broadband capability.	Original	PDF	NTE347 175MHz NTE347 240MHz. 175MHz 100mA,
NTE342 Abstract: No abstract text available Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)	Original	PDF	NTE342 175MHz) NTE342 175MHz 100mA, 600mW,
NTE349 Abstract: No abstract text available Text: NTE349 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF large–signal amplifier applications required in military and industrial equipment to 240MHz.	Original	PDF	NTE349 NTE349 240MHz. 175MHz 175MHz
NTE346 Abstract: npn 1W 40V to39 Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver	Original	PDF	NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW, npn 1W 40V to39
NTE341 Abstract: No abstract text available Text: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead	Original	PDF	NTE341 NTE341 175MHz 155MHz 136MHz
Untitled Abstract: No abstract text available Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)	Original	PDF	NTE342 175MHz) NTE342 175MHz 100mA, 600mW,
NTE344 Abstract: No abstract text available Text: NTE344 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V	Original	PDF	NTE344 175MHz 100mA, 175MHz, NTE344
NTE343 Abstract: No abstract text available Text: NTE343 Silicon NPN Transistor RF Power Output PO = 14W, 175MHz Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)	Original	PDF	NTE343 175MHz) NTE343 175MHz 100mA,
NTE3470 Abstract: MAGNETIC HEAD Text: NTE3470 Integrated Circuit Floppy Disk Read Amplifier System Description: The NTE3470 is a monolithic READ Amplifier System for obtaining digital information from floppy disk storage. It is designed to accept the differential AC signal produced by the magnetic head and produce a digital output pulse that corresponds to each peak of the input signal. The gain stage amplifies	Original	PDF	NTE3470 NTE3470 200pF. 100pF 800pF. MAGNETIC HEAD
Untitled Abstract: No abstract text available Text: NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver	Original	PDF	NTE346 NTE346 500MHz 50mAdc 12Vdc 175MHz 100mW,
nte340 Abstract: No abstract text available Text: NTE340 Silicon NPN Transistor RF Power Output, High Frequency Features: D High Transition Frequency D Output of 0.6W can be obtained in the VHF Band f = 175MHz . Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V	Original	PDF	NTE340 175MHz) 100mA 100mA, 200MHz 175MHz nte340
NTE345 Abstract: 136v Text: NTE345 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V large–signal amplifier applications in industrial and commercial FM equipment operating to 175MHz.	Original	PDF	NTE345 NTE345 175MHz. 160MHz 160MHz 136v
1905 Abstract: NTE348 Text: NTE348 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in military and industrial equipment to	Original	PDF	NTE348 NTE348 300MHz. 175MHz 250mA, 175MHz 1905

bcm 4330 Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?	Original	PDF
NTE36 Abstract: NTE45 nte33 NTE34 nte157 Text: N T E ELECTRONICS INC SEE D • bMaiSSI 0002513 bOb « N T E T - Z ^ O f Maximum Breakdown! Voltage NTE TVP» Number Polarity and Material Description and Application Casa Style Diag. No. Maximum Collector Power Dissipation Watts Maximum Collector Current	OCR Scan	PDF	NTE31) NTE34) TB-34 NTE50) NTE49) T0202 NTE36 NTE45 nte33 NTE34 nte157
NTE34 Abstract: 2039P nte33 nte50 nte157 Text: Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo BV c e o BVebO l>FE Pd *T 1 160 160 6 100 Min 0.9 15 Min 4 15 160	OCR Scan	PDF	NTE31) NTE34) NTE33) NTE37) NTE36 NTE36) NTE36 NTE37 T0202 NTE34 2039P nte33 nte50 nte157
Untitled Abstract: No abstract text available Text: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7	OCR Scan	PDF	1400-BIT 14-LEAD NTE2764 NTE2800 NTE2732A 200nS 28-LEAD 24-LEAD 40-LEAD NTE6502
NTE4256 Abstract: No abstract text available Text: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1	OCR Scan	PDF	NTE2732A 24-Lead 200ns NTE2764 28-Lead NTE2800 14-Lead 1400-Bit NTE4256

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NTE34 Datasheets (11)

NTE34 Datasheets Context Search

NTE342

NTE347

NTE342

NTE349

NTE346

NTE341

Untitled

NTE344

NTE343

NTE3470

Untitled

nte340

NTE345

1905

bcm 4330

NTE36

NTE34

Untitled

NTE4256