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    3M Interconnect OD-Q1-MAIL20

    SCOTCH TAPE OD-Q1-MAIL20
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    DigiKey OD-Q1-MAIL20 Bulk 1
    • 1 $546.87
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    NXP Semiconductors MF3MODQ101DA8-06J

    IC RFID TRANSP 13.56MHZ PLLMC
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    DigiKey MF3MODQ101DA8-06J Reel 30,000
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    NXP Semiconductors MF3MODQ101DA8/06J

    MF3MODQ101DA8/06/PLLMC/REEL 13 - Tape and Reel (Alt: MF3MODQ101DA8/06J)
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    Avnet Americas MF3MODQ101DA8/06J Reel 16 Weeks 30,000
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    Mouser Electronics MF3MODQ101DA8/06J
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    Newark MF3MODQ101DA8/06J Bulk 30,000
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    Weidmüller Interface GmbH & Co. KG MODQ16ST0200

    Pac-Qtum-Rv24-V2-2M |Weidmuller MODQ16ST0200
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    Newark MODQ16ST0200 Bulk 1
    • 1 $310.92
    • 10 $288.72
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    Weidmüller Interface GmbH & Co. KG MODQ16ET0500

    Pac-Qtum-Rv24-V0-5M |Weidmuller MODQ16ET0500
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    Newark MODQ16ET0500 Bulk 1
    • 1 $338.18
    • 10 $314.03
    • 100 $278.72
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    ODQ1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tele odq1

    Abstract: odq1 Tele Control tele RELAY fuse 8A 1000VA led flasher diagrams free a1151 D-82069
    Text: ODQ1 Timer - OCTO series Installation design Width 17.5 mm 4 functions, 6 time ranges 1 change-over contact Technical data: 1. Functions 6. Output circuit E R Wu Bp 1 potential free change-over contact Switching capacity distance < 5mm : 750VA (3A / 250V AC)


    Original     		PDF 750VA 1000VA 60/min 100VA D-82069 tele odq1 odq1 Tele Control tele RELAY fuse 8A led flasher diagrams free a1151

    Untitled

    Abstract: No abstract text available
    Text: T43?b24 ODQ1QMD O S'ÌE D VA RI -L CO INC I VRL 1 -5 0 -1 5 V C O -103 Voltage Controlled Oscillator 50-100 M Hz GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE Test Condition: + 15V @ 15 mA, max. D.C. Power Tuning Range 50-100 MHz min. + 10 dBm Power Output


    OCR Scan     		PDF VCO-103 6061-T6. UNC-38 QQ-N-290,

    Untitled

    Abstract: No abstract text available
    Text: CIRCUIT ASSEMBLY CORP bTE ]> • 2133756 ODQ1BB1 6S3 B K A C -Q } CONTACT I M2.6 P =0 . 4 5 THREADED STANDOFF . 0 5 0 TYP C' - 2 7 ] .071 [ 1. 80] CONT ACT POI NT .lie [3.00 ] NANOFLEX D SUB RIGHT ANGLE SOCKET Features .075 Cl. 91] Right angle construction for


    OCR Scan     		PDF UL94V-0 CA-16NFDSR-12GT CA-26NFDSR-12GT CA-30NFDSR-12GT CA-40NFDSR-12GT CA-50NFDSR-12GT CA-60NFDSR-12GT CA-64NFDSR-12GT CA-74NFDSR-12GT CA-100NFDSR-12GT

    cq837

    Abstract: No abstract text available
    Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36


    OCR Scan     		PDF 364080AS 364080ASG THM364080AS/ASG TC514100ASJ 364080ASG A0-A10 THM36408QAS THM364080AS THM364080ASG cq837

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01


    OCR Scan     		PDF HYM564404A 64-bit HY5116404A HYM564404AKG/ATKG/ASLKG/ASLTKG DQ0-DQ63) 4b75oaa 1CE16-10-APR95

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM532224A 32-bit HY5117804B HYM532224AE/ASLE/ATE/ASLTE HYM532224AEG/ASLEG/ATEG/ASLTEG 171M1N DD054M 1CE13-10-0EC94

    HYM536100M

    Abstract: No abstract text available
    Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted


    OCR Scan     		PDF HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93

    ba 5937 fp

    Abstract: No abstract text available
    Text: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads


    OCR Scan     		PDF 28F800F3, 28F160F3 ba 5937 fp

    Untitled

    Abstract: No abstract text available
    Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.


    OCR Scan     		PDF 32100A 32-blt HYM532100A 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG compatible004M 750M6 004t1

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM53221OA 32-bit HYM53221 HY5117800B HYM53221OAE/ASLE/ATE/ASLTE 4b750Afl 1CE13-10-DEC94 HYM532210A

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB

    28F800F3T

    Abstract: te28f800f3t120 B3T125
    Text: intei PRELIMINARY 3 VOLT FAST BOOT BLOCK FLASH MEMORY 28F800F3 and 28F160F3 x16 • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads — Asynchronous Page-Mode Reads ■ Supports Code Plus Data Storage — Optimized for Flash Data Integrator


    OCR Scan     		PDF 28F800F3 28F160F3 32-Kword 56-Lead 28F800F3T te28f800f3t120 B3T125

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458CA725 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA725 is an 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M


    OCR Scan     		PDF MC-458CA725 72-BIT MC-458CA725 uPD4564841 M168S-50A89

    d4564841

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.


    OCR Scan     		PDF 64M-bit uPD4564441 864-bit 54-pin d4564841

    Untitled

    Abstract: No abstract text available
    Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM466F104AT-L KMM466F124AT-L KMM466F124AT-L 1Mx64 1Mx16, KMM466F10 1Mx16bit 44-pin

    Untitled

    Abstract: No abstract text available
    Text: a WPF29041-120G1XX WHITE /M ICROELECTRONICS 4MBYTE 1Mx32 FLASH (5VSupply; 12V Program) S IM M MODULE p r e lim in a r y * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics WPF29041-120G1XX is a 1M x 32 bits ■ 80-pin Flash Single In-line M em ory M odule (SI M M ). The WPF29041-


    OCR Scan     		PDF WPF29041-120G1XX 1Mx32) 120ns WPF29041-120G1XX 80-pin WPF29041- 120G1XX WPF29081-120G1XX

    374S6453AT

    Abstract: No abstract text available
    Text: KMM374S6453AT PC100 SDRAM MODULE KMM374S6453AT SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 374S6453AT is a 64M bit x 72 S ynchronous • Perform ance range


    OCR Scan     		PDF KMM374S6453AT KMM374S6453AT PC100 64Mx72 32Mx8, 374S6453AT 6453AT 168-pin

    KMM366S403BTN-G2

    Abstract: KMM366S403BTN-G0
    Text: KMM366S403BTN NEW JEDEC SDRAM MODULE KMM366S403BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403BTN is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S403BTN KMM366S403BTN 4Mx64 400mil 168-pin DD373b2 KMM366S403BTN-G2 KMM366S403BTN-G0

    KMM366F400BK

    Abstract: No abstract text available
    Text: K M M3 6 6 F 4 0 0 B K DRAM Module ELECTR O NICS KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM366F400BK KMM366F410BK 4Mx64 KMM366F40 300mil 168-pin 110ns KMM366F400BK

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 3 7 2 E 4 0 4 B S Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KM M 3 7 2 E 4 0 4 B S Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    OCR Scan     		PDF 4Mx72 4Mx16 372E404BS 4096cycles/64ms 100Max 54Max) KMM372E404BS -KM416C4104BS

    kmm366s203b

    Abstract: KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2
    Text: KMM366S203BTN NEW JEDEC SDRAM MODULE KMM366S203BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203BTN is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S203BTN KMM366S203BTN 2Mx64 400mil 168-pin kmm366s203b KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2

    Untitled

    Abstract: No abstract text available
    Text: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification


    OCR Scan     		PDF KMM53280 8Mx32bits KMM5328000CK/CKG KMM53281OOCK/CKG KMM5328000CK/CKG KMM53281 5328000CK cycles/64ms KMM5328000CKG

    Untitled

    Abstract: No abstract text available
    Text: KMM366S6453AT PC100 SDRAM MODULE KMM366S6453AT SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S6453AT is a 64M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S6453AT KMM366S6453AT PC100 64Mx64 32Mx8, 400mil 168-pin