x640
Abstract: No abstract text available
Text: Metallized Polyester AC Capacitors Types X637, X640 Formerly TRW-40, TRW-41 and TRW-42 series • • • • • • Applications Motor Run Speed Control Noise Filtering 220 To 460 Vac 50/60 Hz To 25.0 MFD These AC capacitors are constructed from metallized polyester film and otter small
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TRW-40,
TRW-41
TRW-42
Fl39is-*
x640
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Untitled
Abstract: No abstract text available
Text: IDT74FCT1 63244/A/C 3. 3V C M O S 1 6 - BI T BUFFER/LINE DRIVER FEATURES: DESCRIPTION: • 0.5 MICRON CM O S Technology The FCT163244/A/C 16-bit butter/line drivers are built using advanced dual metal CM O S technology. These high speed, low-pow er devices otter bus/backplane interface ca
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IDT74FCT1
63244/A/C
FCT163244/A/C
16-bit
T163244/A/C
244/A
63244A
163244G
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Untitled
Abstract: No abstract text available
Text: W562XXX i.lV in b o n d Electronics Corp. DUAL-TONE MELODY WITH VOICE SYNTHESIZER BandDirector Series GENERAL DESCRIPTION The W562xxx is one of the derivatives ot the BandDirector™ tamily. It consists ot a 4-bit j i C , two voice synthesizers, one Dual tone Melody generator, 38 KHz carrier output tor IR transmission and
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W562XXX
W562xxx
8SS-3-S770
-2-271975D2
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RJ11 4 PIN
Abstract: XE0042V
Text: xeconi XE0042V Quad Phone Line Interfaces with 2/4 Wire Hybrid Description Features The XE0042V provides four FCC compliant * Small Size - 2 . 75 ” x 1.38" x 0.42" telephone interfaces in a compact package. The total package fills only 3.8 square inches of board space. Each identical
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XE0042V
32bis
XE0042V
D0D1D33
RJ11 4 PIN
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.887 INTERNATIONAL RECTIFIER AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTORS IRHM7054 IRHM8Q54 N-CHANNEL MEGA RAD HARD 60 Volt, 0.0270, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs
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IRHM7054
IRHM8Q54
1x106
1x105
1x106
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: jdt 3.3V CM O S OCTAL IDT74FCT3245/A BI D IR E C TIO N A L T R A N S C E IV E R S In te g ra te d D evice T ech n o lo g y , Inc. FEATURES: DESCRIPTION: • 0 .5 M IC R O N C M O S Technology • E S D > 2 0 0 0 V per M IL -S T D -8 8 3 , Method 3015; > 2 0 0 V using m achine model C = 200p F, R = 0)
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IDT74FCT3245/A
IDT74FCT3245/A
P20-1)
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TH 2190 Transistor
Abstract: 30p06v 30P06 P06V TH 2190 mosfet transistor 4413
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet M T B 3 0 P 06 V TM O S V™ P o w er Field E ffe c t T ran sisto r D 2PAK for S u rfa c e M ount M o to ro la P r e fe r re d D e v ic e TMOS POWER FET 30 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate
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commuta14
0E-05
1OE-04
0E-02
TH 2190 Transistor
30p06v
30P06
P06V
TH 2190 mosfet
transistor 4413
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Untitled
Abstract: No abstract text available
Text: 3.3V C M O S 16-BIT B U F F E R / L IN E DRIVER IDT74ALVCH1 6244 IDT74ALVCH1 62244 IDT74ALVC1 6244 IDT74ALVC1 62244 ADVANCE INFORMATION FE ATURES: DESCRIPTION: • C o m m o n feat ures: The 16-bit butter line drivers are built using advanced dual metal C M O S technology. These high-speed, low pow er d e
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16-BIT
IDT74ALVCH1
IDT74ALVC1
16x244
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29lv004b
Abstract: No abstract text available
Text: FLASH MEMORY CMOS ;. M x/M B 4B-12-X FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts
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40-pin
D-63303
F9803
29lv004b
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IL055
Abstract: No abstract text available
Text: SGS-THOMSON M28LV17 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max
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M28LV17
200ns
PDIP28
M28LV17
IL055
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Untitled
Abstract: No abstract text available
Text: ^E D I E D I8 2 1 3 6 C H /fif/j Performance Megabit SRAM Badronic o«ign. me. 32Kx36 Monolithic Asynchronous/Latched Address Monolithic Static RAM liF Û M Â T O Û i Features TheEDI82136Cisa1,179,648bitAsynchronousmemory core with transparent address and enable latches in the
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32Kx36
TheEDI82136Cisa1
648bitAsynchronousmemory
EDI82136C,
daparitydeselectconfrolforx32bitoperation
EDI82136C
EDI82136C12GC
EDI82136C15GC
EDI82136C17GC
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Untitled
Abstract: No abstract text available
Text: M B M29 LV400T-12-x/M B M29 LV400B-12-x FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard com m ands Uses same software commands as E2PROMs • Compatible with JEDEC-standard w orld-w ide pinouts
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LV400T-12-x/M
LV400B-12-x
48-pin
44-pin
46-pin
F9704
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28C17
Abstract: No abstract text available
Text: SGS-THOMSON M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 90ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max
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M28C17
PDIP28
M28C17
28C17
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28LV16
Abstract: No abstract text available
Text: SGS-THOMSON M28LV16 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:
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M28LV16
200ns
PDIP24
TSOP28
M28LV16
28LV16
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Untitled
Abstract: No abstract text available
Text: fax id: 5211 CYPRESS CY7C09269W79V/89V CY7C09369W79V/89V PRELIMINARY 3.3V 16K/32K/64KX 16/18 Synchronous Dual Port Static RAM • High-speed clock to data access 10/12ns max. • 3.3V Low operating power Fea tu res True Dual-Ported memory cells which allow simulta
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CY7C09269W79V/89V
CY7C09369W79V/89V
16K/32K/64KX
10/12ns
100-pin
9379V
--12AC
Y7C09379V-12AI
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Untitled
Abstract: No abstract text available
Text: M 2 4 A A 0 0 /2 4 L C 0 0 /2 4 C 0 0 ic r o c h ip 128 Bit I2C Bus Serial EEPROM DEVICE SELECTION TABLE Device PACKAGE TYPES V cc Range Temp Range 24AA00 1.8 - 6.0 C,l 24LC00 2.5 - 6.0 C,l 24C00 4.5 - 5.5 C, I ,E 8-PIN PDIP/SOIC 2 7 □ NC X NCQ 3 V ss Q
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24AA00
24LC00
24C00
OT-23
24AA00/24LC00/
24xx00*
128-bit
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M28C16 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST AC C E S S TIM E : 90ns ■ S IN G LE 5 V ± 10% SU P P LY VO LTAG E ■ LO W PO W ER C O N S U M P TIO N ■ FAST W R ITE C YC LE : - 64 Bytes Page W rite O peration -
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M28C16
PDIP24
PLCC32
TSOP28
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IC 74ls245 latch
Abstract: HBCR-2000 ic 8 pin 1801 free ic 74LS245 motor driver ic 74LS245 HBCR-2997
Text: WhoI HEWLETT m L 'K M PACKARD BAR CODE DECODE ICS Contact scanners • HBCR-1800, *1801. -1810, -1811 Multi-Purpose • HBCR-2000, -2001, -2010, -2011 TECHNICAL DATA OCTOBER 1988 Features • IDEAL FOR HAND SCANNING APPLICATIONS AND MANY AUTOMATED SCANNING
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HBCR-1800,
HBCR-2000,
A44304.
CAM903-4M0.
IC 74ls245 latch
HBCR-2000
ic 8 pin 1801
free ic 74LS245
motor driver ic 74LS245
HBCR-2997
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TLC56151
Abstract: No abstract text available
Text: TLC5615C, TLC56151 10-BIT DIGITAL-TO-ANALOG CONVERTERS S L A S 1 4 2 B -OCTOBER 1996 - REVISED MARCH 1997 * D OR P PACKAGE TOP VIEW 1 0 - B i t C M O S V o l t a g e O u t p u t D A C in an 8-Terminal Package ► 5-V Single S u pp ly Operation * 3 - W i r e S e r i al I n t e r f a c e
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TLC5615C,
TLC56151
10-BIT
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27A6
Abstract: A424J
Text: TMS28F210 1 048 576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS210-DEC EMBER 1992 O rganization. . . 64K x 16 Flash Memory N PACKAGEt Pin Compatible with Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time:
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TMS28F210
576-BIT
JS210-DEC
28F210-10
28F210-12
28F210-15
28F210-17
168-Hour
A0-A15
DQODQ15
27A6
A424J
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2114 SOIC
Abstract: 2u44
Text: 4 - 2U44CBook Page 1 Tuesday, July 7, 1998 4:16PM M i c r o c h 24LC32A i p 32K 2.5V I2C Serial EEPROM FEATURES PACKAGETYPES • Single supply with operation down to 2.5V - Maximum w rite current 3 mA at 6.0V - Standby current 1 max at 2.5V • 2-wire serial interface bus, l2C™ com patible
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2U44CBook
24LC32A
2114 SOIC
2u44
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1372C
Abstract: No abstract text available
Text: SMJ28F010B 131072 BY 8-BIT FLASH MEMORY SGMS738 - APRIL 1998 • • • • • • • • • • • Organization . . . 131072 x 8-Bit Flash Memory Pin Compatible With Existing 1M-bit EPROMs High-Reliability MIL-PRF-38535 Processing VCC Tolerance ±10%
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SMJ28F010B
SGMS738
MIL-PRF-38535
28F010B-12
28F010B-15
28F010B-20
1372C
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TPC 8127
Abstract: idq10 a11t SMJ416160 SMJ418160
Text: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP V IEW A C C ESS A C C ESS A C C ESS TIME TIME TIME '41x160-60 '41x160-70 '41x160-80 tRAC MAX 60 ns 70 ns 80 ns tCAC MAX 15 I)« 18 ns 20 ns
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SMJ416160,
SMJ418160
1048576-WORD
16-BIT
SGMS720A
41x160-60
41x160-70
41x160-80
In1443
TPC 8127
idq10
a11t
SMJ416160
SMJ418160
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Untitled
Abstract: No abstract text available
Text: 4- 21160CBook Page 1 Tuesday, July 7, 1998 4:25 PM M i c r o c h 24LC21A i p IK 2.5V Dual Mode I2C Serial EEPROM FEATURES • Single supply with operation down to 2.5V • Com pletely implements DDC1™/DDC2™ interface for m onitor identification, including
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21160CBook
24LC21A
24LC21
DS21160D-page
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