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RFB18N10CS Price and Stock

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Rochester Electronics LLC RFB18N10CS MOSFET N-CH 100V 18A TO220AB-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFB18N10CS	Bulk			121	1 - 10 - 100 - 1000 $2.49 10000 $2.49	Buy Now
Harris Semiconductor RFB18N10CS 18A, 100V, 0.1ohm, N-Channel, POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RFB18N10CS		950		1	1 $2.39 10 $2.39 100 $2.25 1000 $2.03 10000 $2.03	Buy Now
Harris Semiconductor RFB18N10CSVM N-Channel, POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RFB18N10CSVM		49		1	1 $3.67 10 $3.67 100 $3.45 1000 $3.12 10000 $3.12	Buy Now

RFB18N10CS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RFB18N10CS		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

RFB18N10CS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
F18N10CS Abstract: RFB18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10 Text: RFB18N10CS 18A, 100V, 0.100 Ohm, Current Sensing, N-Channel Power MOSFET August 1997 Features Description • 18A, 100V The RFB18N10CS is an N-Channel enhancement-mode silicon-gate power field-effect transistor which has a built-in current sensing function. The current sense lead provides an	Original	PDF	RFB18N10CS RFB18N10CS -55oC 175oC F18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10
Untitled Abstract: No abstract text available Text: RFB18N10CSHM Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ	Original	PDF	RFB18N10CSHM
Untitled Abstract: No abstract text available Text: RFB18N10CS Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ	Original	PDF	RFB18N10CS
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Untitled Abstract: No abstract text available Text: 4 3 0 3 2 7 1 D O S M f l n ffl HUSK’S April 1993 « m HAS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Package Features TS-001AA TOP VIEW • 18A, 100V • rDS ON .° ' 1£i	OCR Scan	PDF	RFB18N10CS TS-001AA RFB18N10CS AN7260)
F18N10CS Abstract: RFB18N10CS F18N10 RFB18N10 Text: m RFB18N10CS H A R R IS S E M I C O N D U C T O R Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package TS-001AA TOP VIEW • 18A, 100V • r D S O N .° ' 1£1	OCR Scan	PDF	RFB18N10CS TS-001AA RFB18N10CS AN7254 AN7260) VOO-28V F18N10CS F18N10 RFB18N10
F18N10CS Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking Text: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl	OCR Scan	PDF	43GE271 RFB18N10CS/ 1810CS01 RFB18N10CS, RFB18N10CSVM, RFB18N10CSHM AN7254 AN7260. FB78N70CS, T-39-90 F18N10CS n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
RLP5N08LE Abstract: 720 transistor transistor field-effect transistor Text: — POWER MOSFETs 7 INTELLIGENT DISCRETES PAGE INTELLIGENT DISCRETE DATA SHEETS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor 7-3 RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs 7-8 RLP1N06CLE	OCR Scan	PDF	RFB18N10CS RFV10N50BE RLP1N06CLE RLP1N08LE RLP5N08LE 720 transistor transistor field-effect transistor
RHR30120 Abstract: RCA1A15 RCA1A11 RCA1C08 RC1566 rc3154 RCA1A09 RCA1A18 RCA1C13 RCA3055 Text: • P art N u m b e r M fr Qty/Note 7600345 P a rt N u m b e r □ □□□37 6 M fr -no Qty/Note ■ P a rt N u m b e r M fr Qty/Nol RC1466 REI CALL RC6S5TL/R REI 179 REF03GP RC1469 ANA 167 REI CALL RC668L REI 158 REF03GS RC1472U ANA 71 REI 390 RC78T12ACK UT	OCR Scan	PDF	RC1466 RC1469 RC1472U RC1505 RC1520G/C RC1533G RC1533L RC1S50 RC1550F7B RC1S63 RHR30120 RCA1A15 RCA1A11 RCA1C08 RC1566 rc3154 RCA1A09 RCA1A18 RCA1C13 RCA3055
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	PDF	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40