RG1G
Abstract: DO204AP DO-204AP
Text: RG1A THRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere * FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction
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MIL-S-19500
DO-204AP
50mVp-p
RG1G
DO204AP
DO-204AP
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RG1G
Abstract: DO204AP DO-204AP
Text: RG1A thru RG1M Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier * d e t n Features e t a P DO204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. Reverse Voltage 50 to 1000V Forward Current 1.0A • High temperature metallurgically bonded construction
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DO204AP
MIL-S-19500
50mVp-p
08-Feb-02
RG1G
DO204AP
DO-204AP
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PDF
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rg1g diode
Abstract: No abstract text available
Text: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway
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DO-204AP
DO-204AP
18-Jul-08
rg1g diode
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PDF
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DO-204AP
Abstract: No abstract text available
Text: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway
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DO-204AP
08-Apr-05
DO-204AP
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PDF
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DO204AP
Abstract: DO-204AP
Text: RG1A THRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere * FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction
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Original
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MIL-S-19500
DO-204AP
50mVp-p
DO204AP
DO-204AP
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PDF
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DO-204AP
Abstract: rg1g diode RG1A RG1G
Text: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway
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Original
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DO-204AP
D-74025
28-Jan-03
DO-204AP
rg1g diode
RG1A
RG1G
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PDF
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rg1g diode
Abstract: DO204AP DO-204AP RG1J
Text: RG1A thru RG1M Glass Passivated Fast Switching Rectifier DO204AP 0.034 0.86 0.028 (0.71) DIA. • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at TA = 55°C with no thermal runaway
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Original
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DO204AP
MIL-S-19500
DO-204AP
50mVp-p
rg1g diode
DO204AP
RG1J
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PDF
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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BYD74G
Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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5KA10
5KA10A
5KA11
5KA11A
5KA12
5KA12A
5KA13
5KA13A
5KA15
5KA15A
BYD74G
FUR460
diode tfk
18db6a
diode cross reference
FAGOR SM6T33CA
BZY97C
tfk 240
1SMZG06GP
D4SB80Z
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PDF
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rg2m
Abstract: No abstract text available
Text: RG2A to RG2M VISHAY Vishay Semiconductors Fast Sinterglass Switching Rectifier Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway
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Original
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MIL-S-19500
DO-204AP
08-Apr-05
rg2m
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PDF
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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PDF
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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PDF
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BY228-1500
Abstract: BY448 BYW84 BYW85 RG1J BY228 BYT62 BY458 BYW82 BYW83
Text: Sinterglass Rectifiers Part No. CrossReference BYW82 BYW83 BYW84 BYW85 BYW86 - Operating Temperature: -65 o C to 160oC Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25o C @ Rated Io Max. Reverse Current @ 25oC @ Rated PIV Package PIV V
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160oC
BYW82
BYW83
BYW84
BYW85
BYW86
5000/Ammo
5000/Reel
BYT62
GI1-1200
BY228-1500
BY448
BYW84
BYW85
RG1J
BY228
BYT62
BY458
BYW82
BYW83
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PDF
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BO 243 A
Abstract: No abstract text available
Text: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction
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OCR Scan
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MIL-S-19500
D0204AP
sol700
BO 243 A
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PDF
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Untitled
Abstract: No abstract text available
Text: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 0 Ampere FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction
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OCR Scan
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MIL-S-19500
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PDF
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Untitled
Abstract: No abstract text available
Text: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 0 Ampere FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction
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OCR Scan
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MIL-S-19500
D0204AP
MIL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: RG1A THRU RG1M MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER V o lta g e - 50 to 1000 Volts C u rre n t - 1.0 Ampere ~~ FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction in a
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OCR Scan
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D0-204AP
MIL-S-19500
D0204AP
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PDF
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Piezo sounder
Abstract: TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502 MSM7502GS-BK MSM7543 RM01
Text: O K I Semiconductor MSM7502 Multi-Function PCM CODEC G E N E R A L D E S C R IP T IO N The M SM 7502, developed especially for low -pow er and m ulti-function applications in touch tone telephone sets and digital telephone term inals o f digital PBXs, is a single +5 V pow er supply
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OCR Scan
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MSM7502_
MSM7502,
MSM7543
MSM7502
Piezo sounder
TONE/VOLUME CONTROL CIRCUIT
MSM6895
MSM7502GS-BK
RM01
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of
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OCR Scan
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MSM7503
MSM7503
MSM7502.
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PDF
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OCR Scan
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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PDF
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byv260
Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
Text: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75
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OCR Scan
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5KA43A.
5KE440CA.
1N3611GPthru
1N3614GP.
1N3957GP
1N4001
1N4007
1N4001GP
1N4007GP.
1N4245
byv260
W10G
MBRB1060
SBLB2030CT
SBLB2040CT
ug2d
1N8478
KBU8M 514
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PDF
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g1758
Abstract: BYV27-200 byw32-200 G30D GP25M
Text: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53
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OCR Scan
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5KA43,
5KE440,
1N3611GP
1N3957GP
1N4001
1N4007,
1N4148,
1N4150
1N4151,
1N4245
g1758
BYV27-200
byw32-200
G30D
GP25M
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PDF
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DO-204AP
Abstract: DO204AP Package RG1 Series
Text: 3890137 GENL INSTR, POWER 3flT0137 000E435 h ^ T~OZ~ 3 ÿ :^ R G 1 S E R I E S -¿it , INIATURE G LASS PASSIVATED JUNCTION FAST SW ITCHING'RECTIFIER VOLTAGE RANGE SO to 1000 Volts CU RR EN T 1.0 Ampere DQ-204AP FEATURES • High temperature metallurgically bonded — no com
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OCR Scan
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1G137
000E435
DO-204AP
MIL-STD-19500
000243b
DO204AP Package
RG1 Series
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PDF
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1n4948 Silicon Instrument
Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
Text: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio
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OCR Scan
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1N483B
1N486B
1N645
1N649
MII-STD-202/208
from-65
1N4245
1N4249
1N5059
1N5062
1n4948 Silicon Instrument
byw76 diodes
RG3A
General instrument 1n4948
byw76
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PDF
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